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  Datasheet File OCR Text:
 MCC
Features
* * * Low Forward Voltage Surface Mount device Very small conduction losses
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
BAT54 THRU BAT54S
250mWatt, 30Volt
Schottky Barrier Diode
Type Single Dual Dual Dual Pin Configuration
(See Page 3)
MCC Catalog Number BAT54 BAT54A BAT54C BAT54S
Device Marking L4P L42 L43 L44
Figure 1 Figure 2 Figure 3 Figure 4
SOT-23
A D
C
B
Maximum Ratings
Continuos Reverse Voltage Forward Current Non-Repetitive Peak Forward Current t<1s Total Power Dissipation @ TA = 25C Storage Temperature Range Junction Temperature Soldering temperature during 10s VR IF IFSM PD Tstg Tj Tj 30V 0.3A 1.0mA 250mW -55C to 150C 150C 260C
G
F
E
H
J
K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37
Electrical Characteristics @ 25 C Unless Otherwise Specified
Ratings Forward Voltage at IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA Reverse Current Reverse Breakdown Voltage Capacitance Reverse Recovery Time Thermal Resistance, Junction to Ambient Symbol Max. 240mV 320mV 400mV 500mV 900mV 2.0 uA >30V 10pF 5nS 500K/W Notes
VF
DIM A B C D E F G H J K
MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51
NOTE
Suggested Solder Pad Layout VR = 25V
.035 .900 .031 .800
IR V(BR) CJ trr RJA
Measured at 1.0MHz, VR=1.0V IF=IR=10mA; I(REC) = 1mA
.037 .950 .037 .950
.079 2.000
inches mm
www.mccsemi.com
BAT54 thru BAT54S
MCC
Fig.2 : Average forward current versus ambient temperature ( = 1).
0.35
IF(av)(A)
Fig.1 : Average forward power dissipation versus average forward current.
PF(av)(W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 IF(av) (A) 0.00 0.00 0.05 0.10 0.15 0.20
=tp/T
tp T
= 0.1 = 0.05
= 0.2
= 0.5
0.30 0.25
=1
0.20 0.15 0.10 0.05
=tp/T
T
tp
Tamb(C)
0.25
0.30
0.00
0
25
50
75
100
125
150
Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values).
Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm).
Zth(j-a)/Rth(j-a)
IM(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 IM 0.2 0.1 0.0 1E-3
1.00
= 0.5
= 0.2
Ta=25C
= 0.1
Ta=50C
0.10
T
Single pulse
Ta=100C
t
=0.5
t(s) 1E-2 1E-1 1E+0
tp(s)
=tp/T
tp
0.01 1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
www.mccsemi.com
BAT54 thru BAT54S
MCC
Fig.5 : Reverse leakage current versus reverse voltage applied (typical values).
IR(A) 1E+2
Tj=100C
Fig.6 : Reverse leakage current versus junction temperature.
IR(A) 1E+4
VR=30V
1E+3 1E+2 1E+1
1E+1 1E+0 1E-1 1E-2
Tj=50C
1E+0
Tj=25C
1E-1
VR(V) 0 5 10 15 20 25 30
Tj(C) 1E-2 0 25 50 75 100 125 150
Fig.7 : Junction capacitance versus reverse voltage applied (typical values).
C(pF) 10
F=1MHz Tj=25C
Fig.8 : Forward voltage drop versus forward current (typical values).
IFM(A) 5E-1 1E-1
Tj=100C
5
1E-2
Tj=50C
2 VR(V) 1 1 2 5 10 20 30
Tj=25C
1E-3 VFM(V) 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Pin Configuration - Top View
3
1
Figure 1
2
Figure 2 Figure 3 Figure 4
BAT54
BAT54A
BAT54C
BAT54S
www.mccsemi.com


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