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Advance Product Information
April 5, 2006
13 - 17 GHz 2.5 Watt, 25dB Power Amplifier
* * * * * * * *
10 5 0 -5 -10 -15 -20 11 12 13 14 15 16 17 18 19
TGA2505
Key Features and Performance
34 dBm Midband Pout 25 dB Nominal Gain 7 dB Typical Input Return Loss 12 dB Typical Output Return Loss Built-in Directional Power Detector with Reference 0.25m pHEMT Technology Bias Conditions: 7V, 640mA Chip dimensions: 2.03 x 1.39 x 0.10 mm (0.080 x 0.055 x 0.004 inches)
Preliminary Measured Performance
Bias Conditions: Vd=7V Id=640mA
30 25 20 15 10 5 0
S11, S22 (dB)
S21 (dB)
S21 S11 S22
Primary Applications
* * VSAT Point-to-Point
Frequency (GHz)
35 34 33 32 31 30 29 28 27 26 25 11 12 13 14 15 16 17 18 19 60 55 50 45
Psat PAE
40 35 30 25 20 15 10
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
PAE@Psat (%)
Psat (dBm)
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April 5, 2006
TABLE I MAXIMUM RATINGS Symbol V I
+ -
TGA2505
Value 8V -5V to 0V 1300 mA 18 mA 24 dBm 6.43 W 150 C 320 C -65 to 150 0C
0 0
Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Notes 2/ 2/ 2/ 2/ 3/ 4/ 5/
V
+
| IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this bias condition with a base plate temperature of 70C, the median life is reduced from 8.9E+6 to 1E+6. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
TABLE II DC PROBE TEST (TA = 25 C, Nominal) NOTES 1/ 1/ 2/ 2/ 2/ SYMBOL IDSS GM |VP| |VBVGS| |VBVGD| MIN 80 175 0.5 8 13 LIMITS MAX 381 425 1.5 30 30 UNITS mA mS V V V
1/ Measurements are performed on a 800m FET. 2/ VP, VBVGD, and VBVGS are negative.
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April 5, 2006
TGA2505
TABLE III RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (Vd = 7V, Id = 640mA r5%) SYMBOL PARAMETER TEST CONDITION LIMITS TYP 25 UNITS
Gain
Small Signal Gain
F = 13 - 17 GHz
dB
IRL
Input Return Loss
F = 13 - 17 GHz
7
dB
ORL
Output Return Loss Output Power @ Pin = +15 dBm
F = 13 - 17 GHz
12
dB
PWR
F = 13 - 17 GHz
34
dBm
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements.
TABLE IV THERMAL INFORMATION PARAMETER Rjc Thermal Resistance (Channel to Backside) TEST CONDITION VD = 7V ID = 640mA PD = 4.48W TCH (qC) RTjc (qC/W) 12.44 MTTF (HRS) 8.9E+6
125.74
Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
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April 5, 2006
Typical Fixtured Performance
30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 11 12 13 14 15 16 17 18
TGA2505
S21 (dB)
19
Frequency (GHz)
0 -5 S11 S22
S11,S22 (dB)
-10 -15 -20 -25 -30 11 12 13 14 15 16 17 18 19
Frequency (GHz)
4
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April 5, 2006
Typical Fixtured Performance
35 34.5 34 33.5
TGA2505
Psat P2dB
Pout (dBm)
33 32.5 32 31.5 31 30.5 30 11 12 13 14 15 16 17 18 19
Frequency (GHz)
40 35 30
PAE @ Psat PAE @ P2dB
PAE (%)
25 20 15 10 11 12 13 14 15 16 17 18 19
Frequency (GHz)
5
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April 5, 2006
Typical Fixtured Performance
37 35
TGA2505
2600 2400 2200 2000
Output Power (dBm)
33 31 29 27 25 23 21 19 17 -5 -3
13.5 GHz 14.0 GHz 14.5 GHz
1600 1400 1200 1000 800 600 -1 1 3 5 7 9 11 13 15 17 19
Input power (dBm)
Id (mA)
6
1800
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April 5, 2006
Typical Fixtured Performance
18 12 6
TGA2505
IMD3 (dBm)
0 -6 -12 -18 -24 -30 -36 16 18 20 22 24 26 28 30
13GHz 14GHz 15GHz
Output power/tone (dBm)
45 44 43
IP3 Avg (dBm)
42 41 40 39 38 37 36 35 11 12 13 14 15 16 17 18 19
Frequency (GHz)
7
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April 5, 2006
TGA2505 Mechanical Drawing
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April 5, 2006
TGA2505 Power Detector
+5V
40K:
40K:
Vref
Vdet
External MMIC
5pF
50:
DUT
RF out
TGA2505 Power Detector @ 14GHz
0.6 0.5
Vref-Vdet (V)
0.4 0.3 0.2 0.1 0 0
(20 dBm)
10
(26 dBm)
20
(29.5 dBm) (32 dBm) (34 dBm)
30
40
50
60
sqrt Pout (mW^0.5)
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April 5, 2006
TGA2505 Chip Assembly & Bonding Diagram
Vd
100pF Off chip R=10: Off chip C=0.1PF
Input TFN
Output TFN
Vg
Off chip R=10: 100pF Off chip C=0.1PF
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone : (972)994-8465
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Advance Product Information
April 5, 2006
TGA2505 Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
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