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| Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances IXFH 75N10Q IXFT 75N10Q RDS(on) VDSS ID25 = 100 V = 75 A = 20 mW trr 200ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C I S IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 100 100 20 30 75 300 75 30 1.5 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C g g TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G G = Gate S = Source S D = Drain TAB = Drain (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 300 6 4 Features l 1.13/10 Nm/lb.in. l l Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 100 2.0 4 100 25 1 20 V V nA A mA m l l l IXYS advanced low gate charge process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % Easy to mount Space savings High power density (c) 1999 IXYS All rights reserved 98550A (6/99) IXFH 75N10Q IXFT 75N10Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 30 45 3700 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 425 31 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 (External) 65 65 28 140 180 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 65 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 75 300 1.5 200 A A V ns C A Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline I F = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % I F = 50A,-di/dt = 100 A/s, VR = 50 V 0.85 8 Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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