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| BSM 10 GD 120 DN2 IGBT Power Module * Power module * 3-phase full-bridge * Including fast free-wheel diodes * Package with insulated metal base plate Type BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package ECONOPACK 2 ECONOPACK 2K Ordering Code C67076-A2513-A67 C67070-A2513-A67 1200V 15A 1200V 15A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 15 10 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 30 20 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 80 W + 150 -55 ... + 150 1.52 2 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Jan-10-1997 BSM 10 GD 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 0.2 0.8 6.5 3.2 3.9 V VGE = VCE, IC = 0.32 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 10 A, Tj = 25 C VGE = 15 V, IC = 10 A, Tj = 125 C Zero gate voltage collector current ICES 0.4 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 120 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 4.7 530 80 38 - S pF - VCE = 20 V, IC = 10 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jan-10-1997 BSM 10 GD 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 55 110 ns VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 150 Rise time tr 50 100 VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 150 Turn-off delay time td(off) 380 570 VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 150 Fall time tf 80 120 VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 150 Free-Wheel Diode Diode forward voltage VF 2.9 2.6 3.4 - V IF = 10 A, VGE = 0 V, Tj = 25 C IF = 10 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr 0.5 - s IF = 10 A, VR = -600 V, VGE = 0 V diF/dt = -400 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 10 A, VR = -600 V, VGE = 0 V diF/dt = -400 A/s Tj = 25 C Tj = 125 C 0.4 1.2 - Semiconductor Group 3 Jan-10-1997 BSM 10 GD 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C 90 W Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 tp = 46.0s A Ptot 70 60 50 IC 100 s 10 1 1 ms 10 0 40 30 10 -1 20 10 0 0 10 -2 0 10 DC 10 ms 20 40 60 80 100 120 C 160 10 1 10 2 10 3 V TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 15 A 13 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W 10 0 IGBT IC 12 11 10 9 8 7 6 5 4 3 2 1 0 0 ZthJC 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 single pulse 10 -3 0.02 0.01 20 40 60 80 100 120 C 160 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Semiconductor Group 4 Jan-10-1997 BSM 10 GD 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 20 A IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 20 A 17V 15V 13V 11V 9V 7V IC 16 14 12 10 8 6 4 2 0 0 IC 16 14 12 10 8 6 4 2 0 0 17V 15V 13V 11V 9V 7V 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 20 A IC 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Jan-10-1997 BSM 10 GD 120 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 10 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 4 pF VGE 16 14 12 10 8 C 600 V 800 V 10 3 Ciss 10 2 6 4 2 0 0 10 1 0 Coss Crss 10 20 30 40 50 nC 70 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 6 Jan-10-1997 BSM 10 GD 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 150 10 3 t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, IC = 10 A 10 3 tdoff t ns tdoff t ns 10 2 tr 10 2 tdon tr tdon tf tf 10 1 0 5 10 15 A 25 10 1 0 50 100 150 200 250 IC 350 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 150 7 E = f (RG) , inductive load , Tj = 125C par.: VCE = 600V, VGE = 15 V, IC = 10 A 7 mWs Eon E 5 E mWs 5 4 4 3 3 Eon 2 Eoff 1 2 1 Eoff 0 0 5 10 15 A 25 0 0 50 100 150 200 250 IC 350 RG Semiconductor Group 7 Jan-10-1997 BSM 10 GD 120 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 20 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 Diode K/W IF 16 14 12 ZthJC 10 0 Tj=125C 10 8 6 4 2 0 0.0 Tj=25C 10 -1 D = 0.50 0.20 0.10 10 -2 single pulse 0.05 0.02 0.01 0.5 1.0 1.5 2.0 V 3.0 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 8 Jan-10-1997 BSM 10 GD 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 60 g Semiconductor Group 9 Jan-10-1997 |
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