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| NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. * Ideal for Coil-on-Plug Applications * Gate-Emitter ESD Protection * Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load * Integrated ESD Diode Protection * New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area * Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices * Low Saturation Voltage * High Pulsed Current Capability * Integrated Gate-Emitter Resistor (RGE) * Emitter Ballasting for Short-Circuit Capability MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25C - Pulsed ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD ESD PD TJ, Tstg Value 430 430 18 18 50 8.0 800 115 0.77 -55 to +175 Unit VDC VDC VDC ADC AAC kV V Watts W/C C 1 Gate http://onsemi.com 18 AMPS 400 VOLTS VCE(on) 3 2.0 V @ IC = 10 A, VGE . 4.5 V C G RGE E D2PAK CASE 418B STYLE 4 MARKING DIAGRAM 4 Collector GB 18N40B YWW 3 Emitter 2 Collector Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. GB18N40B = NGB18N40CLB Y = Year WW = Work Week ORDERING INFORMATION Device NGB18N40CLBT4 Package D2PAK Shipping 800/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 March, 2005 - Rev. 1 1 Publication Order Number: NGB18N40CLB/D NGB18N40CLBT4 UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS (-55 TJ 175C) Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25C Symbol EAS Value 400 300 mJ 2000 Unit mJ EAS(R) MAXIMUM SHORT-CIRCUIT TIMES (-55C TJ 150C) Characteristic Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) Symbol tsc1 tsc2 Value 750 5.0 Unit ms ms THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient D2PAK (Note 1) Symbol RqJC RqJA TL Value 1.3 50 275 Unit C/W C/W C Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds http://onsemi.com 2 NGB18N40CLBT4 ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector Emitter Clamp Voltage Collector-Emitter BVCES IC = 2 0 mA 2.0 IC = 10 mA Zero Gate Voltage Collector Current ICES VCE = 350 V, VGE = 0 V Reverse Collector-Emitter Leakage Current IECS VCE = -24 V Reverse Collector-Emitter Clamp Voltage BVCES(R) () IC = -75 mA Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Emitter Resistor ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) () IC = 1 0 mA 1.0 mA, VGE = VCE - TJ = 25C TJ = 150C TJ = -40C Threshold Temperature Coefficient (Negative) Collector-to-Emitter On-Voltage - VCE(on) () IC = 6.0 A, VGE = 4.0 V - TJ = 25C TJ = 150C TJ = -40C TJ = 25C IC = 8.0 A, VGE = 4.0 V TJ = 150C TJ = -40C TJ = 25C IC = 10 A, VGE = 4.0 V TJ = 150C TJ = -40C TJ = 25C IC = 15 A, VGE = 4.0 V TJ = 150C TJ = -40C TJ = 25C IC = 10 A, VGE = 4.5 V *Maximum Value of Characteristic across Temperature Range. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. TJ = 150C TJ = -40C 1.1 0.75 1.2 - 1.0 0.9 1.1 1.3 1.2 1.4 1.4 1.5 1.4 1.8 2.0 1.7 1.3 1.3 1.4 1.4 1.0 1.6 3.4 1.4 1.3 1.45 1.6 1.55 1.6 1.8 1.8 1.8 2.2 2.4 2.1 1.8 1.75 1.8 1.9 1.4 2.1* - 1.6 1.6 1.7* 1.9* 1.8 1.9* 2.05 2.0 2.1* 2.5 2.6* 2.5 2.0* 2.0* 2.0* mV/C VDC VDC BVGES IGES RGE TJ = -40C to 40 C 150C TJ = -40C to 150C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C IG = 5.0 mA VGE = 10 V - TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C 380 390 - - - - - - 27 30 25 11 384 10 395 405 2.0 10 1.0 0.7 12 0.1 33 36 32 13 640 16 420 430 20 40* 10 2.0 25* 1.0 37 40 35 15 1000 26 VDC mADC kW Symbol Test Conditions Temperature Min Typ Max Unit VDC mADC mA VDC http://onsemi.com 3 NGB18N40CLBT4 ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 2) Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-Off Delay Time (Resistive) Fall Time (Resistive) Turn-On Delay Time Rise Time td(off) tf td(on) tr VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25C TJ = 25C TJ = 25C TJ = 25C - - - - 4.0 9.0 0.7 4.5 10 15 4.0 7.0 mSec mSec CISS COSS CRSS VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = -40C to 40C 150 C 150C 400 50 4.0 800 75 7.0 1000 100 10 pF gfs VCE = 5.0 V, IC = 6.0 A TJ = -40C to 150C 8.0 14 25 Mhos Symbol Test Conditions Temperature Min Typ Max Unit *Maximum Value of Characteristic across Temperature Range. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 4 NGB18N40CLBT4 TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 50 40 30 20 3V 10 0 2.5 V 0 1 2 3 4 5 6 7 8 TJ = 25C 5V 4.5 V 4V 3.5 V 60 50 4.5 V 40 TJ = -40C 30 20 3V 10 0 2.5 V 0 1 2 3 4 5 6 7 8 4V 3.5 V VGE = 10 V 5V VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics 60 IC, COLLECTOR CURRENT (AMPS) 50 5V 40 TJ = 150C 30 20 10 0 4.5 V 4V 3.5 V 3V 2.5 V 0 1 2 3 4 5 6 7 8 60 VGE = 10 V IC, COLLECTOR CURRENT (AMPS) 55 50 45 40 35 30 25 20 15 10 5 0 Figure 2. Output Characteristics VCE = 10 V TJ = -40C TJ = 150C TJ = 25C 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VGE, GATE TO EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 4. Transfer Characteristics 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 VGE = 5 V IC = 25 A IC = 20 A IC = 15 A IC = 10 A IC = 5 A 3 2.5 IC = 15 A 2 1.5 1 0.5 0 IC = 10 A IC = 5 A TJ = 25C 3 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE (C) GATE-TO-EMITTER VOLTAGE (VOLTS) Figure 5. Collector-to-Emitter Saturation Voltage versus Junction Temperature Figure 6. Collector-to-Emitter Voltage versus Gate-to-Emitter Voltage http://onsemi.com 5 NGB18N40CLBT4 COLLECTOR TO EMITTER VOLTAGE (VOLTS) 3 2.5 2 1.5 1 0.5 0 IC = 15 A IC = 10 A IC = 5 A TJ = 150C 10000 1000 100 10 1 0 3 4 5 6 7 8 9 10 GATE TO EMITTER VOLTAGE (VOLTS) Ciss C, CAPACITANCE (pF) Coss Crss 0 20 40 60 80 100 120 140 160 180 200 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector-to-Emitter Voltage versus Gate-to-Emitter Voltage 2 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -30 -10 10 30 50 70 90 110 130 150 VTH IL, LATCH CURRENT (AMPS) 1.8 VTH + 4 s VTH - 4 s 30 25 20 15 10 5 0 -50 -25 Figure 8. Capacitance Variation GATE THRESHOLD VOLTAGE (VOLTS) VCC = 50 V VGE = 5.0 V RG = 1000 W L = 2 mH L = 3 mH L = 6 mH 0 25 50 75 100 125 150 175 TEMPERATURE (C) TEMPERATURE (C) Figure 9. Gate Threshold Voltage versus Temperature 30 IL, LATCH CURRENT (AMPS) 25 L = 2 mH 20 15 10 5 0 -50 -25 L = 3 mH L = 6 mH VCC = 50 V VGE = 5.0 V RG = 1000 W 12 10 SWITCHING TIME (ms) 8 6 Figure 10. Minimum Open Secondary Latch Current versus Temperature VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 10 A L = 300 mH tf td(off) 4 2 0 -50 -30 -10 0 25 50 75 100 125 150 175 10 30 50 70 90 110 130 150 TEMPERATURE (C) TEMPERATURE (C) Figure 11. Typical Open Secondary Latch Current versus Temperature Figure 12. Inductive Switching Fall Time versus Temperature http://onsemi.com 6 NGB18N40CLBT4 100 COLLECTOR CURRENT (AMPS) DC 10 100 ms 1 1 ms 10 ms 0.1 100 ms COLLECTOR CURRENT (AMPS) 100 10 DC 1 100 ms 1 ms 10 ms 0.1 100 ms 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C) Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C) 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) t1 = 1 ms, D = 0.05 10 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 100 t1 = 1 ms, D = 0.05 10 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 1 1 0.1 0.1 0.01 1 10 100 1000 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) VBATT = 16 V VBATT = 16 V RL = 0.1 W RL = 0.1 W L = 10 mH L = 10 mH 5.0 V 5.0 V VIN RG = 1 kW RS = 55 mW VIN RG = 1 kW Figure 17. Circuit Configuration for Short Circuit Test #1 http://onsemi.com 7 Figure 18. Circuit Configuration for Short Circuit Test #2 NGB18N40CLBT4 100 R(t), TRANSIENT THERMAL RESISTANCE (C/Watt) Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 0.01 P(pk) Single Pulse t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJA(t) RqJC @ R(t) for t 0.2 s 0.001 0.0001 0.00001 0.0001 0.001 t,TIME (S) 0.01 0.1 1 Figure 19. Transient Thermal Resistance (Non-normalized Junction-to-Ambient mounted on minimum pad area) http://onsemi.com 8 NGB18N40CLBT4 PACKAGE DIMENSIONS D2PAK 3 CASE 418B-04 ISSUE J C E -B- 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W 1 2 3 S A -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M J W TB M P U L M STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR F VIEW W-W 3 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 5.08 0.20 17.02 0.67 3.05 0.12 mm inches SCALE 3:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 NGB18N40CLBT4 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 10 NGB18N40CLB/D |
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