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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200205 Issued Date : 1995.12.18 Revised Date : 2004.09.16 Page No. : 1/4 HM669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HM649A Absolute Maximum Ratings (TA=25C) SOT-89 * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ....................................................................................................................+150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C) ...................................................................................................................... 1 W Total Power Dissipation (TC=25C) .................................................................................................................... 10 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage....................................................................................................................... 180 V BVCEO Collector to Emitter Voltage.................................................................................................................... 160 V BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V IC Collector Current (DC) ................................................................................................................................... 1.5 A IC Collector Current (Pulse) ................................................................................................................................... 3 A Thermal Characteristic Symbol Rja Rjc Characteristic Thermal Resistance, junction to ambient (TA=25 C) Thermal Resistance, junction to case (TC=25oC) o Max. 125 12.5 Unit o o C/W C/W Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE1 *hFE2 fT Min. 180 160 5 100 30 Typ. 140 Max. 10 1 1.5 320 MHz Unit V V V uA V V IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=160V, IE=0 IC=500mA, IB=50mA IC=150mA, VCE=5V IC=150mA, VCE=5V IC=500mA, VCE=5V IC=150mA , VCE=5V *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions Classification Of hFE1 Rank Range HM669A C 100-200 D 180-320 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 Spec. No. : HM200205 Issued Date : 1995.12.18 Revised Date : 2004.09.16 Page No. : 2/4 Saturation Voltage & Collector Current 1000 VCE(s at) @ IC=10IB 125 C o Saturation Voltage (mV) hFE 100 25 C o 125 C 100 o 75 C o 75 C o hFE @ VCE=5V 25 C o 10 1 10 100 1000 10000 10 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 25 C o ON Voltage & Collector Current 1000 25 C 75 C o o 125 C o Saturation Voltage (mV) 75 C o ON Voltage (mV) 125 C o VBE(sat) @ IC=10IB VBE(ON) @ VCE=5V 100 1 10 100 1000 10000 100 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Safe Operating Area 10 PT=1mS Collector Current-IC (A) 1 PT=100mS PT=1S 0.1 0.01 1 10 100 Forward Voltage (V) 1000 HM669A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-89 Dimension C H Spec. No. : HM200205 Issued Date : 1995.12.18 Revised Date : 2004.09.16 Page No. : 3/4 Marking: Date Code H669A Control Code Pb Free Mark Pb-Free: " " (Note) Normal: None B 1 E F G A 2 3 D Note: Green label is used for pb-free packing J I Pin Style: 1.Base 2.Collector 3.Emitter Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I Min. 4.40 4.05 1.50 2.40 0.36 *1.50 *3.00 1.40 0.35 Max. 4.60 4.25 1.70 2.60 0.51 1.60 0.41 *: Typical, Unit: mm 3-Lead SOT-89 Plastic Surface Mounted Package HSMC Package Code: M Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM669A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HM200205 Issued Date : 1995.12.18 Revised Date : 2004.09.16 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HM669A HSMC Product Specification |
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