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| (R) STTH2L06 HIGH EFFICIENCY ULTRAFAST DIODE Table 1: Main Product Characteristics IF(AV) VRRM Tj VF (typ) trr (typ) FEATURES AND BENEFITS 2A 600 V 175C 0.85 V 60 ns A K Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature DO-41 STTH2L06 DESCRIPTION The STTH2L06 is using ST Turbo 2 600V planar Pt doping technology. It is specially suited for SMPS and base drive transistor circuits. Packaged in axial, SMA and SMB, this device is intended for use in high frequency inverters, free wheeling and polarity protection. Table 2: Order Codes Part Number STTH2L06 STTH2L06RL Marking STTH2L06 STTH2L06 Part Number STTH2L06A STTH2L06U Marking L6A L6U SMA STTH2L06A SMB STTH2L06U Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) IF(AV) RMS forward voltage Average forward current = 0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature DO-41 SMA SMB DO-41 SMA / SMB Tl = 90C Tl = 100C Tl = 115C tp = 10ms sinusoidal Value 600 7 2 2 2 45 35 -65 to + 175 175 Unit V A A IFSM Tstg Tj A C C September 2004 REV. 1 1/8 STTH2L06 Table 4: Thermal Resistance Symbol Rth(j-l) Junction to lead Parameter DO-41 SMA SMB L = 5 mm Value (max). 35 30 25 Unit C/W Table 5: Static Electrical Characteristics Symbol IR * VF ** Parameter Test conditions VR = VRRM 12 IF = 2A 0.85 Min. Typ Max. 2 85 1.3 1.05 V Unit A Reverse leakage current Tj = 25C Tj = 150C Forward voltage drop Tj = 25C Tj = 150C Pulse test: ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.89 x IF(AV) + 0.08 IF (RMS) * tp = 5 ms, < 2% 2 Table 6: Dynamic Characteristics Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tj = 25C Tj = 25C Test conditions IF = 1A dIF/dt = 50 A/s VR =30V IF = 2A dIF/dt = 100 A/s VFR = 1.1 x VFmax Min. Typ Max. Unit 60 85 100 9 ns ns V 2/8 STTH2L06 Figure 1: Conduction losses versus average forward current P(W) 2.5 Figure 2: Forward voltage drop versus forward current IFM(A) 10 = 0.1 = 0.05 = 0.2 = 0.5 9 8 Tj=150C (maximum values) 2.0 =1 1.5 7 6 5 Tj=150C (typical values) 1.0 4 T 0.5 3 2 Tj=25C (maximum values) IF(AV)(A) 0.0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 =tp/T 2.00 2.25 tp 1 0 VFM(V) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration (SMA - SCU = 1cm2) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Single pulse Figure 4: Relative variation of thermal impedance junction to case versus pulse duration (SMB - SCU = 1cm2) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 tp(s) 0.1 0.0 Single pulse tp(s) 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E-03 Figure 5: Relative variation of thermal impedance junction to case versus pulse duration (DO-41) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Single pulse Figure 6: Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 15.0 VR=400V Tj=125C IF=2 x IF(AV) IF=IF(AV) 12.5 10.0 IF=0.5 x IF(AV) 7.5 5.0 2.5 tp(s) 0.0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 3/8 STTH2L06 Figure 7: Reverse recovery time versus dIF/dt (typical values) trr(ns) 500 450 400 600 350 300 250 200 150 200 100 50 0 0 50 100 150 200 250 300 350 400 450 500 100 IF=2 x IF(AV) IF=IF(AV) VR=400V Tj=125C Figure 8: Reverse recovery charges versus dIF/dt (typical values) Qrr(nC) 800 VR=400V Tj=125C 700 IF=2 x IF(AV) 500 IF=IF(AV) 400 IF=0.5 x IF(AV) 300 IF=0.5 x IF(AV) dIF/dt(A/s) 0 0 100 dIF/dt(A/s) 200 300 400 500 Figure 9: Relative variations of dynamic parameters versus junction temperature Figure 10: Transient peak forward voltage versus dIF/dt (typical values) VFP(V) 25 1.4 1.2 1.0 15 0.8 QRR IF=IF(AV) VR=400V Reference: Tj=125C IF=IF(AV) Tj=125C 20 0.6 0.4 0.2 IRM trr 10 5 Tj(C) 0.0 25 50 75 100 125 0 0 50 dIF/dt(A/s) 100 150 200 250 Figure 11: Forward recovery time versus dIF/dt (typical values) tfr(ns) 400 350 300 250 200 150 100 50 IF=IF(AV) VFR=1.1 x VF max. Tj=125C Figure 12: Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25C 10 dIF/dt(A/s) 0 0 50 100 150 200 250 1 1 10 VR(V) 100 1000 4/8 STTH2L06 Figure 13: Thermal resistance junction to ambient versus copper surface under tab (epoxy FR4, eCU=35m) (SMA / SMB) Rth(j-a)(C/W) 120 110 Rth(j-a) Figure 14: Thermal resistance versus lead lengh (DO-41) Rth(C/W) 120 100 90 80 SMB SMA 100 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 60 Rth(j-l) 40 20 SCU(cm) 0 5 10 Llead(mm) 15 20 25 Figure 15: SMA Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 E c A1 E E1 C L A2 D b L Figure 16: SMA Foot Print Dimensions (in millimeters) 1.65 1.45 2.40 1.45 5/8 STTH2L06 Figure 17: SMB Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 A1 D 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 A2 b E c E A1 E1 D b C L A2 L Figure 18: SMB Foot Print Dimensions (in millimeters) 2.3 1.52 2.75 1.52 6/8 STTH2L06 Figure 19: DO-41 Package Mechanical Data DIMENSIONS C A C / OB REF. Millimeters Min. Max. 5.20 2.71 Inches Min. 0.160 0.080 1.102 Max. 0.205 0.107 A OD / OD / 4.07 2.04 28 0.712 B C D 0.863 0.028 0.034 Table 7: Ordering Information Part Number STTH2L06 STTH2L06RL STTH2L06A STTH2L06U Marking STTH2L06 STTH2L06 L6A L6U Package DO-41 DO-41 SMA SMB Weight 0.34 g 0.34 g 0.068 g 0.11 g Base qty 2000 5000 5000 2500 Delivery mode Ammopack Tape & reel Tape & reel Tape & reel Table 8: Revision History Date 07-Sep-2004 Revision 1 Description of Changes First issue 7/8 STTH2L06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 |
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