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MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) DESCRIPTION The MH4M365CXJ/CNXJ is 4194304-word x 36-bits dynamic RAM. This consists of eight industry standard 4M x 4 dynamic RAMs in SOJ and four industry 4M x 1 dyanmic RAMs in SOJ. The mounting of SOJ on a single in-line package provides any application where high densities and large quantities of memory are required. This is a socket-type memory module,suitable for easy interchange or addition of modules. [Double side] 1.Vss 2.DQ0 3.DQ16 4.DQ1 5.DQ17 6.DQ2 37.MP1 38.MP3 39.Vss 40.CAS0 41.CAS2 42.CAS3 43.CAS1 44.RAS0 45.NC 46.NC 47.W 48.NC 49.DQ8 50.DQ24 51.DQ9 52.DQ25 53.DQ10 54.DQ26 55.DQ11 FEATURES Type name MH4M365CXJ/CNXJ-5 MH4M365CXJ/CNXJ-6 MH4M365CXJ/CNXJ-7 RAS CAS access access time time (max.ns) (max.ns) Address Cycle Power access dissipatime time tion (max.ns) (min.ns) (typ.mW) 7.DQ18 8.DQ3 11.NC 10.Vcc 11.NC 12.A0 13.A1 14.A2 15.A3 50 60 70 13 15 20 25 30 35 90 110 130 7240 5920 5200 72pin single in-line package Single 5.0V 10% supply Low stand-by power dissipation 44mW (Max) Low operating power dissipation MH4M365CXJ/CNXJ- 5 MH4M365CXJ/CNXJ- 6 MH4M365CXJ/CNXJ- 7 16.A4 17.A5 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 CMOS lnput level 9.15W (Max) 7.48W (Max) 6.51W (Max) 18.A6 19.A10 20.DQ4 21.DQ20 22.DQ5 Hyper-page mode , RAS-only refresh , CAS before RAS refresh, Hidden refresh capabilities All inputs and output directly TTL compatible 2048 refresh cycles every 32ms (A0 ~ A10) MH4M365CXJ MH4M365CNXJ Gold plating Nickel+solder plating 23.DQ21 24.DQ6 25.DQ22 26.DQ7 27.DQ23 28.A7 29.NC APPLICATION Main memory unit for computers, Microcomputer memory, Refresh memory for CRT 30.Vcc 31.A8 32.A9 33.NC 34.RAS2 35.MP2 36.MP0 56.DQ27 37 38 57.DQ12 39 40 41 58.DQ28 42 43 59.Vcc 44 45 60.DQ29 46 47 61.DQ13 48 49 62.DQ30 50 51 63.DQ14 52 53 54 64.DQ31 55 56 65.DQ15 57 58 66.NC 59 60 67.PD1 61 62 68.PD2 63 64 69.PD3 65 66 70.PD4 67 68 69 71.NC 70 71 72.Vss 72 Outline 72N9D-C PD1 PD2 PD3 PD4 -5 Vss NC Vss Vss -6 Vss NC NC NC -7 Vss NC Vss NC NC: NO CONNECTION MIT-DS-0086-1.1 MITSUBISHI ELECTRIC ( 1 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM FUNCTION in addition to normal read, write, a number of other functions, e.g., hyper page mode, RAS only refresh, The input conditions for each are shown in Table 1. Table 1 Input conditions for each mode Inputs Operation RAS Read Early write RAS-only refresh Hidden refresh CAS before RAS refresh Standby ACT ACT ACT ACT ACT NAC CAS ACT ACT NAC ACT ACT DNC W NAC ACT DNC NAC DNC DNC Row address APD APD APD APD DNC DNC Column address APD APD DNC DNC DNC DNC Input/Output Input OPN VLD DNC OPN DNC DNC Output VLD OPN OPN VLD OPN OPN Note : ACT : active, NAC : nonactive, DNC : don' t care, VLD : valid, IVD : Invalid,APD : applied, OPN : open BLOCK DIAGRAM DQ1 DQ3 DQ5 DQ7 DQ9 DQ11 DQ13 DQ15 DQ0 DQ2 DQ4 DQ6 DQ8 DQ10 DQ12 DQ14 MP0 MP1 MP2 MP3 DQ17 DQ19 DQ21 DQ23 DQ25 DQ27 DQ29 DQ31 DQ16 DQ18 DQ20 DQ22 DQ24 DQ26 DQ28 DQ30 2468 20 22 24 26 49 51 53 55 57 61 63 65 36 37 35 38 3579 21 23 25 27 50 52 54 56 58 60 62 64 M5M 417405CJ M5M 417405CJ M5M 417405CJ M5M 417405CJ M5M 44105CJ M5M 44105CJ M5M 44105CJ M5M 44105CJ M5M 417405CJ M5M 417405CJ M5M 417405CJ M5M 417405CJ 40 44 CAS0 RAS0 43 CAS1 12 13 14 15 16 17 18 28 31 32 19 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 41 CAS2 42 34 47 CAS3 W RAS2 MIT-DS-0086-1.1 MITSUBISHI ELECTRIC ( 2 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM ABSOLUTE MAXIMUM RATINGS Symbol Vcc VI V0 I0 Pd Topr Tstg Supply voltage Input voltage Output voltage Output current Power dissipation Operating temperature Storage temperature Ta=25 C With respect to Vss Parameter Conditions Ratings -1 ~ 7 -1 ~ 7 -1 ~ 7 50 12 0 ~ 70 -40 ~ 125 Unit V V V mA W C C RECOMMENDED OPERATING CONDITIONS Symbol Vcc Vss VIH VIL Supply voltage Supply voltage High-level input voltage, all inputs Low-level input voltage, all inputs Parameter (Ta=0 ~ 70 C, unless otherwise noted) (Note 1) Limits Unit V V V V Min 4.5 0 2.4 -1 Nom 5.0 0 Max 5.5 0 5.5 0.8 Note 1 : All voltage values are with respect to Vss ELECTRICAL CHARACTERISTICS Symbol VOH VOL IOZ II Parameter High-level output voltage Low-level output voltage Off-state output current Input current Average supply current from Vcc operating (Note 3,4,5) ICC2 (Ta=0 ~ 70C, Vcc=5.0V 10%, Vss=0V, unless otherwise noted) (Note 2) Test conditions IOH=-5.0mA IOL=4.2mA Q floating 0V VOUT 5.5V 0V VIN 6 V, Other inputs pins=0V Limits Min 2.4 0 -20 -120 Typ Max Vcc 0.4 20 120 1660 1360 1180 RAS= CAS =VIH, output open RAS= CAS Vcc - 0.2 V RAS cycling, CAS= VIH tRC=min. output open 24 8 1660 1360 1180 1620 1320 1060 1580 1300 1140 mA mA mA mA mA Unit V V A A MH4M365C MH4M365C MH4M365C -5 -6 -7 ICC1 (AV) RAS, CAS cycling tRC=tWC=min. output open Supply current from Vcc , stand-by (Note 6) Average supply current from Vcc refreshing (Note 3,5) Average supply current from Vcc Hyper-Page-Mode (Note 3,4,5) Average supply current from Vcc CAS before RAS refresh mode (Note 3) MH4M365C MH4M365C MH4M365C MH4M365C MH4M365C MH4M365C MH4M365C MH4M365C MH4M365C -5 -6 -7 -5 -6 -7 -5 -6 -7 ICC3 (AV) ICC4(AV) RAS=VIL, CAS cycling tPC=min. output open ICC6(AV) CAS before RAS refresh cycling tRC=min. output open Note 2: Current flowing into an IC is positive, out is negative. 3: Icc1 (AV), Icc3 (AV) and Icc4 (AV) are dependent on cycle rate. Maximum current is measured at the fastest cycle rate. 4: Icc1 (AV) and Icc4 (AV) are dependent on output loading. Specified values are obtained with the output open. 5: Column Address can be changed once or less while RAS=VIL and CAS=VIH . MIT-DS-0086-1.1 MITSUBISHI ELECTRIC ( 3 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM CAPACITANCE (Ta=0 ~ 70 C, Vcc=5.0V 10%, Vss=0V, unless Symbol CI (A) CI (W) CI (RAS) CI (CAS) CI / O Parameter Input capacitance,address inputs Input capacitance, write control input Input capacitance, RAS input Input capacitance, CAS input Input/Output capacitance, data ports VI=Vss otherwise noted) Test conditions Limits Min Typ Max 78 84 42 42 22 Unit pF pF pF pF pF f=1MHZ Vi=25mVrms SWITCHING CHARACTERISTICS Symbol (Ta=0 ~ 70 C, Vcc = 5V 10%, Vss=0V, unless otherwise noted , see notes 6,14,15) Limits Parameter Access time from CAS Access time from RAS Column address access time Access time from CAS precharge Output hold time from CAS (Note 13) Output hold time from RAS Output low impedance time from CAS low (Note 7) (Note 12) Output disable time after WE high Output disable time after CAS high Output disable time after RAS high (Note 12,13) (Note 12,13) (Note 7,8) (Note 7,9) (Note 7,10) (Note 7,11) MH4M365C -5 Min Max 13 50 25 30 5 5 5 13 13 13 MH4M365C -6 Min Max 15 60 30 35 5 5 5 15 15 15 MH4M365C -7 Min Max 20 70 35 40 5 5 5 20 20 20 Unit ns ns ns ns ns ns ns ns ns ns tCAC tRAC tAA tCPA tOHC tOHR tCLZ tWEZ tOFF tREZ Note 6: An initial pause of 500s is required after power-up followed by a minimum of eight initialization cycles (any combination of cycles containing a RAS clock such as RAS-Only refresh). Note the RAS may be cycled during the initial pause . And any 8 RAS or RAS/CAS cycles are required after prolonged periods (greater than 32 ms) of RAS inactivity before proper device operation is achieved. 7: Measured with a load circuit equivalent to VOH=2.4V(IOH=-5mA) / VOL=0.4V(IOL=-4.2mA) load 100pF. The reference levels for measuring of output signal are 2.0V(VOH) and 0.8V(VOL). 8: Assumes that tRCD tRCD(max) and tASC tASC(max) and tCP t CP(max). 9: Assumes that tRCD tRCD(max) and tRAD tRAD(max). If tRCD or tRAD is greater than the maximum recommended value shown in this table, tRAC will increase by amount that tRCD exceeds the value shown. 10: Assumes that tRAD tRAD(max) and tASC tASC(max). 11: Assumes that tCP tCP(max) and tASC tASC(max). 12: tWEZ(max) ,tOFF(max) and tREZ(max)defines the time at which the output achieves the high impedance state ( and is not reference to VOH(min) or VOL(max). 13: Output is disabled after both RAS and CAS go to high. IOUT I 10 A I) MIT-DS-0086-1.1 MITSUBISHI ELECTRIC ( 4 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM TIMING REQUIREMENTS (For Read, Write, Refresh, and Hyper-Page Mode Cycles) (Ta=0 ~ 70C, Vcc = 5V 10%, Vss=0V, unless otherwise noted See notes 14,15) Limits MH4M365C -6 Min 40 37 20 5 0 10 25 10 15 0 0 10 10 50 1 50 13 30 45 Max 32 50 20 5 0 13 15 0 0 10 10 1 50 13 35 50 Symbol Parameter Refresh cycle time RAS high pulse width Delay time, RAS low to CAS low Delay time, CAS high to RAS low Delay time, RAS high to CAS low CAS high pulse width Column address delay time from RAS low MH4M365C -5 Min Max 32 30 (Note16) 18 5 0 8 (Note17) (Note18) 13 0 0 8 8 (Note19) 1 MH4M365C -7 Min Max 32 Unit ms ns ns ns ns ns ns ns ns ns ns ns tREF tRP tRCD tCRP tRPC tCPN tRAD tASR tASC tRAH tCAH tT Row address setup time before RAS low Column address setup time before CAS low Row address hold time after RAS low Column address hold time after CAS low Transition time Note 14: The timing requirements are assumed tT =3ns. 15: VIH(min) and VIL(max) are reference levels for measuring timing of input signals. 16: tRCD(max) is specified as a reference point only. If tRCD is less than tRCD(max), access time is tRAC. If tRCD is greater than tRCD(max), access time is controlled exclusively by tCAC or tAA. 17: tRAD(max) is specified as a reference point only. If tRAD tRAD(max) and tASC tASC(max), access time is controlled exclusively by tAA. 18: tASC(max) is specified as a reference point only. If tRCD tRCD(max) and tASC tASC(max), access time is controlled exclusively by tCAC. 19: tT is measured between VIH(min) and VIL(max). Read and Refresh Cycles Symbol Parameter Read cycle time RAS low pulse width CAS low pulse width CAS hold time after RAS low RAS hold time after CAS low Read Setup time before CAS low Read hold time after CAS high Read hold time after RAS high Column address to RAS hold time Column address to CAS hold time (Note 20) (Note 20) MH4M365C Min 90 50 8 40 13 0 0 0 25 13 10000 10000 -5 Limits MH4M365C Min 110 60 10 48 15 0 0 0 30 18 10000 10000 -6 MH4M365C Min 130 70 13 55 20 0 0 0 35 23 10000 10000 -7 Unit ns ns ns ns ns ns ns ns ns ns Max Max Max tRC tRAS tCAS tCSH tRSH tRCS tRCH tRRH tRAL tCAL Note 20: Either tRCH or tRRH must be satisfied for a read cycle. MIT-DS-0086-1.1 MITSUBISHI ELECTRIC ( 5 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM Write Cycle (Early Write) MH4M365C Min -5 Limits MH4M365C Min 110 10000 10000 60 10 48 15 0 10 10 0 10 10000 10000 -6 MH1M365C Min 130 70 13 55 20 0 13 13 0 13 -7 Symbol Parameter Write cycle time RAS low pulse width CAS low pulse width CAS hold time after RAS low RAS hold time after CAS low Write setup time before CAS low Write hold time after CAS low Write pulse width Data setup time before CAS low or W low Data hold time after CAS low or W low Unit ns Max Max Max 10000 10000 ns ns ns ns ns ns ns ns ns tWC tRAS tCAS tCSH tRSH tWCS tWCH tWP tDS tDH 90 50 8 40 13 0 8 8 0 8 Hyper page Mode Cycle (Read, Early Write, Hi-Z control by W) (Note 21) Symbol Parameter Hyper page mode read/write cycle time Output hold time from CAS low RAS low pulse width for read write cycle CAS high pulse width RAS hold time after CAS precharge W Pulse Width (Hi-Z control) (Note22) (Note23) MH4M365C Min -5 Limits MH4M365C Min 25 5 77 10 33 7 -6 MH4M365C Min 30 5 -7 Unit ns Max Max Max ns ns ns ns ns tHPC tDOH tRAS tCP tCPRH tWPE 20 5 65 8 28 7 100000 13 100000 16 92 13 38 7 100000 16 Note 21: All previously specified timing requirements and switching characteristics are applicable to their respective Hyper page mode cycle. 22: tRAS(min) is specified as two cycles of CAS input are performed. 23: tCP(max) is specified as a reference point only. CAS before RAS Refresh Cycle Symbol tCSR tCHR Parameter (Note 24) Limits MH1M365C Min 5 10 MH1M365C Min 5 10 -5 -6 MH1M365C Min 5 15 -7 Unit ns ns Max Max Max CAS setup time before RAS low CAS hold time after RAS low Note 24: Eight or more CAS before RAS cycles instead of eight RAS cycles are necessary for proper operation of CAS before RAS refresh mode. MIT-DS-0086-1.1 MITSUBISHI ELECTRIC ( 6 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM Timing Diagrams Read Cycle (Note 25) tRC tRAS VIH VIL tCSH tCRP VIH CAS VIL tRAD tASR VIH A0~A10 VIL tRAH tASC tCAH ROW ADDRESS tRP RAS tRCD tRSH tCAS tCRP tRAL tCAL tASR ROW ADDRESS COLUMN ADDRESS tRCS VIH VIL tDZC VIH DQ(INPUTS) tRRH tRCH W tCDD tRDD Hi-Z VIL tCAC tAA tCLZ VOH DQ(OUTPUTS) tREZ tOHR DATA VALID tWEZ tOFF tOHC Hi-Z VOL tRAC Hi-Z Note 25 Indicates the don't care input. VIH(min) VIN VIH(max) or VIL(min) VIN VIL(max) Indicates the invalid output. MIT-DS-0086-1.1 MITSUBISHI ELECTRIC ( 7 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM Early Write Cycle tWC tRAS VIH VIL tCSH tCRP VIH CAS VIL tASR VIH A0~A10 VIL tASR tRAH tASC tCAH COLUMN ADDRESS ROW ADDRESS tRP RAS tRCD tRSH tCAS tCRP ROW ADDRESS tWCS W VIH VIL tDS VIH DQ(INPUTS) tWCH tDH DATA VALID VIL VOH DQ(OUTPUTS) Hi-Z VOL MIT-DS-0086-1.1 MITSUBISHI ELECTRIC ( 8 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM Hyper Page Mode Read Cycle tRAS VIH RAS VIL tCSH tCRP VIH CAS VIL tRAD tASR VIH A0~A10 VIL tRAH tASC tCAH tASC tCAH tASC tCPRH tCAH tRCD tCAS tCP tHPC tCAS tCP tRSH tCAS tRP tASR ROW ADDRESS COLUMN-1 COLUMN-2 COLUMN-3 ROW ADDRESS tRCS tCAL VIH W VIL tDZC tCAL tCAL tRRH tRCH tWEZ tRDD tCDD tCAC tAA tCLZ Hi-Z tCAC tAA tDOH DATA VALID-1 DATA VALID-2 VIH DQ(INPUTS) VIL tCAC tAA tDOH tREZ tOHR tOFF tOHC DATA VALID-3 VOH DQ(OUTPUTS) Hi-Z tRAC VOL tCPA tCPA MIT-DS-0086-1.1 MITSUBISHI ELECTRIC ( 9 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM Hyper Page Mode Early Write Cycle tRAS VIH RAS VIL tCSH tCRP VIH CAS VIL tCAL tASR VIH A0~A10 VIL tRAH tASC tCAH tASC tCAH tASC tCAL tCAH tRCD tCAS tCP tHPC tCAS tRSH tCP tCAS tRP tCRP tASR ROW ADDRESS COLUMN-1 COLUMN-2 COLUMN-3 ROW ADDRESS tWCS VIH W VIL tDS tWCH tWCS tWCH tWCS tWCH tDH tDS tDH tDS tDH VIH DQ(INPUTS) VIL DATA VALID-1 DATA VALID-2 DATA VALID-3 VOH DQ(OUTPUTS) Hi-Z VOL MIT-DS-0086-1.1 MITSUBISHI ELECTRIC (10 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM Hyper Page Mode Read Cycle ( Hi-Z control by W ) tRAS VIH VIL tCSH tCRP VIH CAS VIL tRAD tASR VIH A0~A10 VIL tRAH tASC tCAH tASC tCAH tASC tCPRH tCAH tRCD tCAS tCP tHPC tCAS tCP tRSH tCAS tRP RAS tCRP tASR ROW ADDRESS COLUMN-1 COLUMN-2 COLUMN-3 ROW ADDRESS tRAL tRCS VIH VIL tDZC tWPE tRCH tRCS W tRRH tRCH tRDD tCDD tCAC tAA VIH DQ(INPUTS) VIL tCAC tAA tCLZ tCAC tAA tDOH DATA VALID-1 Hi-Z tWEZ DATA VALID-2 tCLZ Hi-Z tREZ tOHR tOFF tOHC DATA VALID-3 VOH DQ(OUTPUTS) Hi-Z tRAC VOL tCPA tCPA MIT-DS-0086-1.1 MITSUBISHI ELECTRIC (11/ 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM RAS-only Refresh Cycle tRC tRAS VIH RAS VIL tRPC tCRP VIH CAS VIL tASR tRAH tASR tCRP tRP VIH A0~A10 VIL ROW ADDRESS ROW ADDRESS VIH W VIL VIH DQ(INPUT) VIL VOH DQ(OUTPUT) Hi-Z VOL MIT-DS-0086-1.1 MITSUBISHI ELECTRIC (12 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM CAS before RAS Refresh Cycle tRC tRP VIH RAS VIL tRPC tCSR VIH CAS VIL tCPN tCHR tRAS tRAS tRC tRP tRPC tCSR tCHR tRPC tCRP tASR VIH A0~A10 VIL tRRH tRCH VIH W VIL tRCS ROW ADDRESS COLUMN ADDRESS VIH DQ(INPOUT) VIL VOH DQ(OUTPUT) tREZ tOHR tOFF tOHC Hi-Z VOL MIT-DS-0086-1.1 MITSUBISHI ELECTRIC (13 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM Hidden Refresh Cycle (Read) (Note 26) tRC tRAS VIH RAS VIL tCRP VIH CAS VIL tRAD tASR VIH A0~A10 VIL tRAH ROW ADDRESS tRC tRP tRAS tRP tRCD tRSH tCHR tASC tCAH COLUMN ADDRESS tASR ROW ADDRESS tRCS tRAL tRRH tRCH VIH W VIL tDZC tCDD tRDD VIH DQ(INOUT) Hi-Z VIL tCAC tAA tCLZ Hi-Z VOL tRAC DATA VALID tREZ tOHR tOFF tOHC Hi-Z VOH DQ(OUTPUT) Note 26: Early write, delayed write, read write or read modify write cycle is applicable instead of read cycle. Timing requirements and output state are the same as that of each cycle shown above. MIT-DS-0086-1.1 MITSUBISHI ELECTRIC (14 / 15 ) Nov.8.96 MITSUBISHI LSIs MH4M365CXJ/CNXJ-5,-6,-7 HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 72pin DRAM Module Outline 107.95 8.6MAX 3.38 101.19 25.4 10.16 6.35 1 72 R1.57 2.03 R1.57 1.27 1.27 6.35 35x1.27=44.45 6.35 35x1.27=44.45 2-o3.18 MIT-DS-0086-1.1 MITSUBISHI ELECTRIC (15 / 15 ) Nov.8.96 |
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