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| Schottky Barrier Diodes (SBD) MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 0.1 1.25 0.1 0.425 + 0.1 2.0 0.2 1.3 0.1 0.65 0.65 1 3 2 * Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) * Optimum for high-frequency rectification because of its short reverse recovery time (trr) I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 -55 to +125 Unit V V mA mA C C 0.9 0.1 1 : Anode 2 : NC 3 : Cathode EIAJ : SC-70 Flat S- Mini Type Package (3-pin) Marking Symbol: M2M Internal Connection 1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 30 0.3 1.0 Unit A V V pF ns Detection efficiency 65 0.15 - 0.05 + 0.1 0.3 - 0 I Features % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA3J745 IF V F 103 Schottky Barrier Diodes (SBD) VF Ta 1.0 IR VR 104 Ta = 125C Forward voltage IF (mA) 102 75C 25C - 20C Forward voltage VF (V) Reverse current IR (A) Ta = 125C 0.8 IF = 30 mA 0.6 103 75C 102 10 10 mA 0.4 25C 10 1 10-1 0.2 1 mA 1 10-2 0 0.4 0.8 1.2 1.6 2.0 2.4 0 -40 10-1 0 40 80 120 160 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 3.2 2.8 f = 1 MHz Ta = 25C IR T a 104 Terminal capacitance Ct (pF) 103 VR = 30 V 3V 1V 2.0 1.6 1.2 0.8 0.4 0 Reverse current IR (A) 0 5 10 15 20 25 30 2.4 102 10 1 10-1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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