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E2Q0010-27-X2 electronic components
This version: Jan. 1998 Previous version: Jun. 1996 KGF1145
electronic components KGF1145
Small-Signal Amplifier
GENERAL DESCRIPTION
The KGF1145 is a two-stage small-signal UHF-band amplifier that features low current operation, high output power, and high isolation. The KGF1145 specifications are guaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching circuits are also required. Because of the high isolation, the KGF1145 is an ideal part for VCO-buffer amplifiers and intermediate stage amplifiers for portable handy phones, such as cellular phones.
FEATURES
* Low current operation: 4 mA (max.) * High output power: 2 dBm (min.) * High isolation: -40 dB * Self-bias circuit configuration with built-in source capacitor * Package: 4PSOP
PACKAGE DIMENSIONS
1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05
1.10.15
0.36 0.74
3.00.2
1.50.15
0.3 MIN
0 to 0.15
Package material 1.90.1 2.80.15 Lead frame material 0.125
+0.03 -0
Epoxy resin 42 alloy Solder plating 5 mm or more
Pin treatment Solder plate thickness
(Unit: mm)
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electronic components
KGF1145
MARKING
(4) (3)
BXX
(1) (2) NUMERICAL NUMERICAL PRODUCT TYPE LOT NUMBER (1) Gate (2) Source (3) Drain (4) GND
CIRCUIT
D (3)
(1) G S (2)
100 pF
(4)
GND
APPLICATION EXAMPLE FOR PORTABLE PHONES
Transmission system intermediate frequency KGF1165 KGF1145/46 VCO
GaAs device KGF1305 KGF1254/56
Antenna
Power amplifier
Driver amplifier
SAW filter
Wide-band amplifier KGL2115
Buffer amplifier. Oscillator Divider 1 n Prescaler Prescaler Divider 1 n Filter Filter
Duplexer
KGL2115 KGF1175 KGF1155 Mixer amplifier
Buffer amplifier. Oscillator
VCO Head amplifier SAW filter Receiving system intermediate frequency KGF1145/46
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electronic components
KGF1145
ABSOLUTE MAXIMUM RATINGS
Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Unit V V mA mW C C Min. -- -3 -- -- -- -45
(Ta = 25C) Max. 6 0.4 60 200 150 125
ELECTRICAL CHARACTERISTICS
(Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Operating current Gate-source cut-off voltage Transconductance Output power Isolation Symbol IGSS IGDO IDS(off) IDSS ID VGS(off) gm PO ISO Condition VGS = -3 V VGDO = -6 V VDS = 3 V, VGS = -2.5 V VDS = 3 V, VGS = 0 V (*1), PIN = -10 dBm VDS = 3 V, IDS = 120 mA VDS = 3 V, IDS = 2.5 mA (*1), PIN = -10 dBm (*1), PIN = -10 dBm Unit mA mA mA mA mA V mS dBm dB Min. -- -- -- 15 -- -2.0 8 2 40 Max. 12 60 120 -- 4 -1.0 -- -- --
*1 Self-bias condition: VDD = 5.0 0.25 V, VG = 0 V, f = 850 MHz
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electronic components
KGF1145
CHARACTERISTICS
Po vs. PIN
10 5
4 0
3 -10 2
-20 VDD =4.75 V f=850 MHz -30 -40
1
-30
-20
-10
0
0
Input Power PIN (dBm)
Operating Current ID (mA)
Output Power Po (dBm)
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electronic components Typical S Parameters
KGF1145
VDD = 5 V, ID = 2.70 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 1.019 1.014 1.004 0.997 0.989 0.979 0.970 0.958 0.949 0.936 0.926 0.914 0.903 0.889 0.882 0.867 0.856 0.849 0.840 0.829 0.820 0.807 0.798 0.783 0.779 0.765 -13.30 -15.83 -18.55 -21.19 -23.73 -26.33 -28.86 -31.41 -33.99 -36.74 -39.31 -42.03 -44.77 -47.30 -49.93 -52.61 -55.68 -58.49 -61.23 -64.11 -66.28 -69.20 -72.04 -75.15 -78.39 -81.35 4.379 4.408 4.273 4.200 4.021 3.914 3.594 3.432 3.195 3.019 2.806 2.627 2.427 2.318 2.232 2.170 2.118 2.017 1.954 1.903 1.846 1.781 1.748 1.705 1.670 1.609 -47.41 -59.30 -70.90 -79.69 -88.70 -96.04 -103.81 -109.87 -115.80 -120.72 -126.82 -131.34 -135.76 -141.70 -146.80 -151.72 -156.73 -162.05 -167.23 -172.08 -176.86 178.08 172.95 168.29 163.69 158.74 0.002 0.001 0.002 0.001 0.002 0.001 0.002 0.002 0.003 0.001 0.001 0.001 0.000 0.001 0.003 0.003 0.004 0.006 0.006 0.010 0.011 0.012 0.015 0.019 0.024 0.029 68.37 68.30 76.00 103.87 70.31 41.49 39.66 69.82 40.98 91.26 106.35 87.82 36.68 -107.00 -120.41 -119.09 -120.95 -127.04 -118.02 -117.98 -118.51 -121.43 -125.86 -127.35 -123.08 -127.91 0.922 0.921 0.920 0.918 0.918 0.912 0.913 0.910 0.909 0.901 0.901 0.898 0.895 0.889 0.888 0.881 0.878 0.875 0.870 0.867 0.864 0.863 0.856 0.857 0.850 0.852 -7.57 -8.97 -10.50 -11.77 -13.39 -14.69 -16.08 -17.60 -18.98 -20.60 -21.77 -23.04 -24.52 -25.91 -26.97 -28.24 -29.59 -30.86 -32.08 -33.30 -34.57 -35.57 -36.57 -37.71 -38.64 -39.54
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electronic components Typical S Parameters
KGF1145
VDD = 5 V, ID = 2.70 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
j1.0 j0.5 j2.0 135 j0.2 j5.0 3.0 0.5 S22 0.5 3.0 S11 3.0 0.0 0.2 0.5 1.0 2.0 5.0 3.0 S21 0.5 180
5.0 4.0 3.0 2.0
90 45
0.5
1.0 0.01 0.02 0.03 0.04 0.05
0
S12
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electronic components Test Circuit for KGF1145
KGF1145
L1
L2
L2
L1
IN
Cc
W1
W1
Cc
OUT
W2
L3
C1
C2
L3 W2 Cc Vd
L1 = 20 mm L2 = 8 mm L3 = 10 mm
W1 = 1 mm W2 = 3 mm Cc = 1000 pF
C1, C2: Trimmer capacitor (Murata Giga-trimmer, max. 4.5 pF)
Substrate parameters er = 2.6 h = 1.6 mm
C1 and C2 are tuned to obtain maximum output power.
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