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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV10 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLV10
QUICK REFERENCE DATA R.F. performance up to Th = 25 C in an unneautralized common-emitter class-B circuit MODE OF OPERATION c.w. c.w. VCE V 13,5 12,5 f MHz 175 175 PL W 8 8 > GP dB 9,0 > typ. 10,5 % 70 typ. 75 zi 2,8 + j1,2 - YL mS 76 - j16 -
PIN CONFIGURATION
handbook, halfpage
PINNING PIN 1
1 4
DESCRIPTION collector emitter base emitter
2 3 4
2
3
MSB057
Fig.1 Simplified outline, SOT123.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLV10
36 V 18 V 4V 1,5 A 4,0 A 20 W 200 C
-65 to + 150 C
handbook, halfpage
1.75 IC
MGP248
handbook, halfpage
30
MGP249
(A) 1.5
Ptot (W) 20
1.25 Th = 70 C 1 Tmb = 25 C
derate by 0.12 W/K
10 0.75
0.1 W/K
0.5 5 10 15 VCE (V) 20 0 0 I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch 50 Th (C) 100
Fig.2 D.C. SOAR.
Fig.3
R.F. power dissipation; VCE 16,5 V; f > 1 MHz.
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
THERMAL RESISTANCE (dissipation = 8 W; Tmb = 72,4 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink CHARACTERISTICS Tj = 25 C Collector-emitter breakdown voltage VBE = 0; IC = 5 mA Collector-emitter breakdown voltage open base; IC = 25 mA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0; VCE = 18 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE VCEsat MHz(1) fT fT Cc Cre Ccf typ. typ. typ. typ. typ. typ. IC = 0,75 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 2 A; IB = 0,4 A Transition frequency at f = 100 -IE = 0,75 A; VCB = 13,5 V -IE = 2 A; VCB = 13,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 13,5 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 13,5 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02. ESBO ESBR > > typ. ICES < V(BR)EBO > V(BR) CEO > V(BR) CES > Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = =
BLV10
10,7 K/W 8,6 K/W 0,3 K/W
36 V 18 V 4V 2 mA 0,5 mJ 0,5 mJ 40 10 to 100 0,85 V 950 MHz 850 MHz 16,5 pF 12 pF 2 pF
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV10
handbook, halfpage
100
MGP250
handbook, halfpage
40
MGP251
hFE 75
Cc (pF) 30
typ 50 VCE = 13.5 V 20
5V 25 10
0 0 1 2 IC (A) 3
0 0 5 10 VCB (V) 15
Fig.4 Typical values; Tj = 25 C.
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
handbook, full pagewidth
1250
MGP252
fT (MHz) 1000 VCB = 13.5 V 10 V 750
500
250
0 0 1 2 -IE (A) 3
Fig.6 Typical values; f = 100 MHz; Tj = 25 C.
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th = 25 C f (MHz) 175 175 VCE (V) 13,5 12,5 PL (W) 8 8 PS (W) < 1,0 - GP (dB) > 9,0 typ. 10,5 IC (A) < 0,85 - > (%) 70 typ. 75 zi ()
BLV10
YL (mS) 76 - j16 -
2,8 + j1,2 -
handbook, full pagewidth
L4 C1 50 L1 L3 T.U.T.
L7
C6 50 C7
L5 C2 L2 C3 C4 C5 R1
L6 +VCC
MGP253
Fig.7 Test circuit; c.w. class-B.
List of components: C1 C2 C3 C4 C5 C7 L1 L2 L3 L5 L7 R1 = = = = = = = = = = = = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C6 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) 47 pF ceramic capacitor (500 V) 120 pF ceramic capacitor (500 V) 100 nF polyester capacitor 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2 x 5 mm L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = strip (12 mm x 6 mm); tap for C3 at 5 mm from transistor 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2 x 5 mm 3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2 x 5 mm 10 carbon resistor
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV10
handbook, full pagewidth
150
72
L6 C4 C5 L5 L4 L7 L2 C3 C6 C7 +VCC R1
L3 C1 C2 L1
rivet
MGP254
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLV10
handbook, halfpage
15
MGP255
Th = 25 C
handbook, halfpage Gp
15
MGP256
150 (%)
PL (W) 70 C 10
Gp (dB)
Th = 70 C 25 C
10
100
5 5
25 C 70 C 50
0 0 VCE = 13,5 V; - - - VCE = 12,5 V. 1 PS (W) 2
0 0 VCE = 13,5 V; - - - VCE = 12,5 V. 5 10 15 PL (W)
0 20
Fig.9 Typical values; f = 175 MHz;
Fig.10 Typical values; f = 175 MHz;
The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio.
handbook, halfpage
10
MGP257
PLnom
(W) (VSWR = 1) 7.5
VSWR = 10 50
5
2.5 PS PSnom 0 0 1.1 1.2 VCE VCEnom 1.3
Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th = 70 C; Rth mb-h = 0,3 K/W; VCEnom = 13,5 V or 12,5 V; PS = PSnom at VCEnom and VSWR = 1.
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLV10
handbook, halfpage
10
MGP258
handbook, halfpage
25
MGP259
ri, xi () 5 ri xi ri 0 xi -5
RL () 20
CL RL
0 CL (pF) -50
CL 15 RL -100
10
-150
-10
5 0 100 200 f (MHz) 300 0 100 200 f (MHz)
-200 300
Typical values; VCE = 13,5 V; PL = 8 W; Th = 25 C
Typical values; VCE = 13,5 V; PL = 8 W; Th = 25 C
Fig.12 Input impedance (series components).
Fig.13 Load impedance (parallel components).
OPERATING NOTE Below 70 MHz a base-emitter resistor of 10 is recommended to avoid oscillation. This resistor must be effective for r.f. only.
handbook, halfpage
20
MGP260
Gp (dB) 15
10
5
0 0 100 200 f (MHz) 300
Typical values; VCE = 13,5 V; PL = 8 W; Th = 25 C
Fig.14
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLV10
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
10
Philips Semiconductors
Product specification
VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV10
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
11

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