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| TLP591B TOSHIBA Photocoupler GaAAs Ired & Photo-Diode Array TLP591B Telecommunication Programmable Controllers MOS Gate Driver MOS FET Gate Driver The TOSHIBA TLP591B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo-diode array in a six lead plastic DIP package. TLP591B is suitable for MOS FET gate driver. TLP591B has an internal shunt resistor to optimize switching speed. Unit in mm * UL recognized: UL1577, file no. E67349 Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 25C) LED Pulse forward current (100s pulse, 100pps) Reverse voltage Junction temperature Detector Forward current Reverse voltage Junction temperature Symbol IF IF /C IFP VR Tj IFD VRD Tj Tstg Topr Tsol BVS Rating 50 -0.5 1 3 125 50 10 125 -55~125 -40~85 260 2500 Unit mA mA /C A V C A V C C C C Vrms TOSHIBA 11-7A9 Pin Configuration (top view) 1 2 3 1. : Anode 2. : Cathode 3. : NC 4. : Cathode 6. : Anode 4 6 Storage temperature range Operating temperature range Lead soldering temperature (10 sec.) Isolation voltage (AC, 1 min., R.H. 60%) (Note 1) (Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4 and 6 shorted together. 1 2002-09-25 TLP591B Recommended Operating Conditions Characteristic Forward current Operating temperature Symbol IF Topr Min. -25 Typ. 20 Max. 25 85 Unit mA C Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Forward voltage Detector Reverse current Capacitance (anode to cachode) Symbol VF IR CT VFD IRD CTD Test Condition IF = 10 mA VR = 3 V V = 0, f = 1 MHz IFD = 10 A VRD = 10 V V = 0, f = 1 MHz Min. 1.2 -- -- -- -- -- Typ. 1.4 -- 30 7 7 -- Max. 1.7 10 60 -- -- -- Unit V A pF V A pF Coupled Electrical Characteristics (Ta = 25C) Characteristic Open voltage Short Current Symbol VOC ISC Test Condition IF = 20 mA IF = 20 mA Min. 7 24 Typ. 8 40 Max. -- -- Unit V A Isolation Characteristics (Ta = 25C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. -- 5x1010 2500 -- -- Typ. 0.8 1014 -- 5000 5000 Max. -- -- -- -- -- Vrms Vdc Unit pF Switching Characteristics (Ta = 25C) Characteristic Turn-on time Turn-off time Symbol ton toff Test Condition IF = 20 mA, CL = 1000pF Min. -- (Fig. 1) -- Typ. 0.2 3 Max. -- -- Unit ms ms Fig. 1 Switching time test circuit IF CL vOUT IF vOUT 0V tON 5V 1V tOFF 2 2002-09-25 TLP591B 100 IF - Ta Forward voltage temperature coefficient VF/Ta (mV/) VF/Ta -4.0 -3.6 -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 - IF Allowable forward current IF (mA) 80 60 40 20 0 -20 0 20 40 60 80 100 0.1 0.3 0.5 1 3 5 10 30 Ambient temperature Ta () Forward current IF (mA) 100 IF - VF Ta = 25 5000 IFP - DR Pulse width 100s Ta = 25 (mA) 50 30 (mA) Pulse forward current IFP 3000 1000 500 300 Forward current IF 10 5 3 100 50 30 1 1.0 10 1.2 1.4 1.6 1.8 2.0 2.2 3 10-3 3 10-2 3 10-1 3 100 Forward voltage VF (V) Duty cycle ratio DR 10 9 8 VOC - IF Ta = 25C (A) 300 ISC - IF 100 50 (V) 7 6 5 4 3 2 1 0 1 VOC 55C 85C ISC current 30 Open voltage 10 5 3 Short Ta = 25C 55C 85C 1 3 5 10 30 50 100 1 3 5 10 30 50 100 Forward current IF (mV) Forward current IF (mA) 3 2002-09-25 TLP591B RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 4 2002-09-25 |
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