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| Datasheet File OCR Text: |
| Shantou Huashan Electronic Devices Co.,Ltd. P NP S I L I C O N T RAN S I S T O R H649A LOW FREQUANCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS Tstg T j PC PC VCBO VCEO VEBO IC Storage TemperatureJunction Temperature- Collector Dissipation Collector Dissipation Tc=25ae(c) TA=25ae (c)- - Ta=25ae(c) -55~150ae 150ae 20W 1W -180V -160V -5V -1.5A 1D Emitter E 2D Collector C 3D Base B TO-126ML Collector-Base Voltage- - - - Collector-Emitter Voltage- - Emitter-Base Voltage- Collector Current DC(c)- Electrical Characteristics Symbol Ta=25ae(c) Min Typ Max Unit Test Conditions Parameter HFE HFE 1(c) 2(c) DC Current Gain 60 30 200 VCE= -5V, IC= -150mA VCE= -5V, IC= -500mA VCE(sat) BVCBO BVCEO BVEBO ICBO fT Cob Collector- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector-Base Cutoff Current -1 -180 -160 -5 -10 |I 140 27 V V V V A IC= -500mA, IB= -50mA IC= -1mA, IE=0 IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -160V, IE=0 VCE=-5V, IC=-150mA VCB=-10V,IE=0,f=1MHz Current Gain- Bandwidth Product Output Capacitance MHz pF hFE Classification B 60 120 100 C 200 |
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