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| FLL21E045IY L,S-band High Power GaAs FET FEATURES High Voltage Operation (VDS=28V) GaAs FET High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) Broad Frequency Range : 2110 to 2170MHz High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT T stg T ch Condition TC=25 C (Case Tem perature) o Rating 32 -3 92 65 to +175 200 o Unit V V W o C o C - RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR T ch Condition RG=2 RG=2 Limit <28 <176 >-15.9 155 Unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C) Item Pinch-Off Voltage Gate-Source Breakdown Voltage 3rd Order Intermodulation Distortion Power Gain Drain Efficiency Adjacent Channel Leakage Power Ratio Themal Resistance Note 1 : IM3, ACLR and Gain test conditions as follows IM3 & Gain : f 0=2.1325GHz, f 1=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f 0-15MHz and f 1+15MHz. ACLR : f 0=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f 0+/-5MHz o Symbol VP VGSO IM 3 GP D ACLR Rth Condition VDS=5V, IDS=75.4mA IGS=-754uA VDS=28V IDS(DC)=500mA Pout=40dBm(Avg.) Note 1 Limit Min. -0.1 -5 14.5 Typ. -0.2 -33 15.5 26 -35 1.7 Max. -0.5 -30 1.9 Unit V V dBc dB % o Channel to Case dBc C/W ESD Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k ) CLASS III 2000V ~ CASE STYLE : IY Edition 1.1 June 2004 1 FLL21E045IY L,S-band High Power GaAs FET Output Power vs. Frequency VDS=28V, IDS=500mA 50 Output Power [dBm] Output Power & Drain Efficiency vs. Input Power VDS=28V, IDS=500mA, f=2.14GHz 50 100 48 46 Output Power [dBm] 48 46 44 42 40 38 36 34 32 30 18 20 22 24 26 28 30 32 34 36 Input Power [dBm] 90 Pout 80 70 60 50 40 Drain Efficiency [%] 44 42 40 38 36 2.10 d 30 20 10 0 2.12 2.14 2.16 2.18 2.20 Frequncy [GHz] Pin=22dBm Pin=28dBm Pin=24dBm Pin=30dBm Pin=26dBm Pin=32dBm Two-Carrier IMD(ACLR) vs. Output Power VDS=28V, IDS=500mA, f0=2.135, f1=2.145GHz W-CDMA 3-GPP BS-1 64ch Modulation Single-Carrier ACLR vs. Output Power VDS=28V, IDS=500mA, f0=2.135GHz W-CDMA 3GPP BS-1 64ch Modulation -25 40 35 30 25 20 15 10 5 24 26 28 30 32 34 36 38 40 42 44 Output Power[dBm] +/-5MHz +/-10MHz Drain Efficiency Drain Efficiency[%] -25 -30 -35 IMD[dBc] 40 Drain Efficiency[%] 35 30 25 20 15 10 5 24 26 28 30 32 34 36 38 40 42 44 Output Power[dBm] IM3 IM5 Drain Efficiency -30 -35 ACLR[dBc] -40 -45 -50 -55 -60 -40 -45 -50 -55 -60 2 FLL21E045IY L,S-band High Power GaAs FET Board Layout C17 C16 C15 R2 C18 VGS C14 C13 C12 C11 C10 VDS R1 C1 C3 L1 C8 C9x5 C4 C2 r=3.5 t=0.8mm Circuit Diagram of the Board C14 C13 C12 C11 C10 C15 C16 C18 C17 R2 Z5 Z1 C1 Z2 Z3 R1 C3 Z4 Z6 C8 Z7 L11 C9x5 Z8 Z9 C4 Z10 C2 Z11 Z1, Z11 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 9.00mm x 1.78mm Transmission Line 25.5mm x 1.78mm Transmission Line 7.30mm x 1.78mm Transmission Line 6.00mm x 13.0mm Transmission Line 23.0mm x 0.50mm Transmission Line 3.00mm x 25.0mm Transmission Line 3.00mm x 13.0mm Transmission Line 23.0mm x 1.50mm Transmission Line 7.30mm x 1.78mm Transmission Line 25.5mm x 1.78mm Transmission Line C1,C2 C3 C4 C8 C9 C10,C15 C11,C16 C12,C17 C13,C14 10pF 1.5pF 2.0pF 1.5pF 0.1uF 20pF 100nF 1000pF 10uF C18 L1 R1 R2 22uF 3.3nF 2.0ohm 51ohm Board input size r=3.5 t=0.8mm 50mm x 50mm output size r=3.5 t=0.8mm 50mm x 50mm 3 FLL21E045IY L,S-band High Power GaAs FET S-Parameters @VDS=28V, IDS=500mA, f=1.0 to 3.0 GHz +50j +25j 2. 1 10 25 +100j [GHz] 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +10j 2. H z 0G 2. H z 0G +250j 0 2. 1 -10j 2. 2 2. 2 -250j -25j -50j -100j S 11 S 22 +90 2.2 180 8 2.1 4 Scale for |S21| 2.2 2.0GHz 2.1 0 2.0GHz 0.15 0.3 -90 S11(mag) S11(ang) S21(mag) S21(ang) S12(mag) S12(ang) S22(mag) S22(ang) 0.961 -176.09 0.475 0.09 0.002 72.44 0.941 -173.21 0.955 -176.12 0.465 -4.08 0.003 72.31 0.941 -174.11 0.955 -176.17 0.474 -8.51 0.003 73.23 0.938 -174.90 0.946 -176.41 0.512 -13.28 0.004 78.24 0.939 -175.61 0.938 -177.38 0.574 -19.09 0.005 73.43 0.937 -176.50 0.929 -178.32 0.676 -25.53 0.007 68.02 0.928 -177.31 0.903 -179.71 0.858 -34.12 0.008 60.18 0.922 -178.49 0.868 178.18 1.156 -46.13 0.011 51.50 0.901 179.94 0.802 175.71 1.676 -62.08 0.015 37.37 0.877 178.21 0.676 173.72 2.636 -86.18 0.022 13.74 0.879 174.82 0.482 178.20 4.384 -122.79 0.033 -20.98 0.898 162.03 0.441 -135.80 6.693 171.86 0.040 -88.96 0.634 102.88 0.490 -131.54 6.712 162.88 0.039 -97.96 0.560 90.14 0.540 -130.55 6.645 154.26 0.038 -107.99 0.484 75.71 0.596 -130.03 6.434 145.37 0.036 -116.93 0.414 58.35 0.649 -130.79 6.205 136.83 0.034 -127.37 0.353 36.86 0.692 -132.19 5.853 128.55 0.031 -133.60 0.323 12.79 0.731 -133.90 5.525 121.00 0.028 -145.32 0.321 -11.35 0.761 -135.91 5.126 113.86 0.026 -151.02 0.345 -32.46 0.783 -137.02 4.769 107.68 0.023 -156.69 0.384 -48.97 0.811 -138.98 4.402 101.97 0.021 -162.23 0.426 -61.84 0.823 -140.79 4.071 96.45 0.018 -168.12 0.472 -72.06 0.883 -148.92 1.953 62.43 0.006 140.62 0.742 -115.08 0.907 -152.47 1.125 44.59 0.003 131.01 0.838 -128.68 0.919 -154.44 0.742 32.86 0.002 67.07 0.885 -135.53 0.923 -156.00 0.539 24.36 0.000 145.10 0.909 -139.52 0.928 -157.30 0.423 17.45 0.001 -166.69 0.920 -141.86 0.930 -158.48 0.353 10.90 0.002 133.58 0.925 -143.60 0.929 -159.87 0.310 6.75 0.003 143.82 0.928 -145.78 0.925 -161.40 0.292 0.72 0.002 121.54 0.916 -147.36 Scale for |S 12| S 12 S 21 4 FLL21E045IY L,S-band High Power GaAs FET IY Package Outline 9.98 R1.524 4.826 3.251 9.779 4.826 12.7 29.50 34.036 0.152 1.575 Unit : mm 5 FLL21E045IY L,S-band High Power GaAs FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. TEL +81-45-853-8156 FAX +81-45-853-8170 6 |
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