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FLL21E040IK
FEATURES
High Voltage - High Power GaAs FET
High Voltage Operation : VDS=28V High Gain: 15dB(typ.) at Pout=40dBm(Avg.) Broad Frequency Range : 2100 to 2200MHz Proven Reliability
DESCRIPTION
The FLL21E040IK is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is target for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA base station amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS Item Symbol
Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
Condition
Rating
Unit
V V W oC oC
VDS 32 -3 VGS Tc=25oC Pt 83.3 Tstg -65 to +175 200 Tch
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC) Item
DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature
Symbol
VDS IGF IGR Tch
Condition
RG=2 RG=2
Limit
<28 <176 >-15.9 155
Unit
V mA mA oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min.
Pinch-Off Voltage Gate-Source Breakdown Voltage 3rd Order Intermodulation Distortion Power Gain Drain Efficiency Adjacent Channel Leakage Power Ratio Thermal Resistance Vp VGSO IM3 Gp d ACLR Rth VDS=5V IDS=150mA IGS=-1.5mA VDS=28V IDS(DC)=500mA Pout=40dBm(Avg.) note Channel to Case -0.1 -5 14.0 -
Limit Typ. Max.
-0.2 -35 15.0 26 -36 1.6 -0.5 -31 1.8
Unit
V V dBc dB % dBc
oC/W
Note 1 : IM3 ACLR and Gain test condition as follows: IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz. ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at fo+/-5MHz. Edition 1.2 Mar 2004
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FLL21E040IK
High Voltage - High Power GaAs FET
Output Power vs. Frequency @VDS=28V, IDS=500mA Output Power & Drain Efficiency vs. Input Power @VDS=28V, IDS=500mA f=2.14GHz
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 2 2.05 2.1 2.15 2.2 2.25 2.3 Frequency [GHz]
Pin=20dBm Pin=35dBm Pin=25dBm P1dB Pin=30dBm
48 46 44 42 40 38 36 34 32 30 28 26 101214161820222426283032343638 Input Pow er[dBm ]
110 100 90 80 70 60 50 40 30 20 10 0
Output Power [dBm]
Output Power [dBm]
Pout
Drain Efficiency
Two-Carrier IMD(ACLR) & Drain Efficiency vs. Output Power @VDS=28V IDS=500mA fo=2.1325, f1=2.1475GHz W-CDMA 3-GPP BS-1 64ch Modulation
-25 -30 -35 35.0 30.0
Single-Carrier ACLR & Drain Efficiency vs. Output Power @VDS=28V IDS=500mA fo=2.1325GHz W-CDMA 3GPP BS-1 64ch Modulation
-25 -30 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0.0 20 22 24 26 28 30 32 34 36 38 40 42 Output Pow er [dBm ] +/-5MHz +/-10MHz Drain Efficiency
ALCR [dBc]
25.0 20.0 15.0 10.0 5.0 0.0 20 22 24 26 28 30 32 34 36 38 40 42 Output Pow er [dBm ] IM3 IM5 Drain Efficiency
Drain Efficiency [%]
-35 -40 -45 -50 -55 -60
-40 -45 -50 -55 -60
2
Drain Efficiency [%]
IMD [dBc]
Drain Efficiency [%]
FLL21E040IK
High Voltage - High Power GaAs FET
S-Parameters @VDS=28V, IDS=500mA, f=1.7 to 3 GHz
!freq(GHzS11(mag)S11(ang) S21(mag)S21(ang) S12(mag)S12(ang) S22(mag)S22(ang) 0.1 0.953 174.7 2.608 176.3 0.001 70.7 0.565 -153.1 +100j +25j 0.2 0.889 171.9 4.640 130.1 0.002 65.7 0.851 -165.1 2. H z 0G 0.3 0.895 172.6 3.664 71.9 0.004 20.9 0.850 -178.9 2. H z 0G 0.4 0.931 169.8 2.268 39.5 0.002 22.6 0.838 177.2 0.5 0.938 166.2 1.511 20.1 0.002 10.9 0.855 173.8 +250j +10j 2. 1 2. 1 1 0.948 149.4 0.614 -29.3 0.004 27.4 0.913 153.8 1.1 0.953 146.0 0.588 -37.3 0.005 32.1 0.906 149.7 2. 2 1.2 0.952 142.3 0.597 -44.5 0.006 24.5 0.907 145.6 0 1.3 0.948 138.4 0.624 -52.9 0.006 31.8 0.907 141.3 1.4 0.944 133.8 0.689 -61.7 0.007 28.9 0.903 136.8 100 1.5 0.943 129.6 0.799 -72.1 0.009 13.0 0.889 131.4 -250j -10j 50 1.6 0.920 124.8 0.964 -83.5 0.011 5.0 0.855 125.8 2. 2 1.7 0.905 119.3 1.243 -97.0 0.014 -4.4 0.828 119.6 25 1.8 0.858 112.8 1.718 -114.1 0.018 -21.8 0.794 112.9 10 -25j 1.9 0.807 105.3 2.575 -136.9 0.026 -41.4 0.743 104.5 -100j 1.95 0.768 101.1 3.263 -151.0 0.030 -57.4 0.727 98.8 S 11 -50j 2 0.714 94.9 4.253 -168.2 0.038 -74.7 0.721 90.1 S 22 2.05 0.625 83.9 5.890 169.2 0.050 -97.1 0.722 73.3 2.1 0.388 59.6 8.431 135.3 0.066 -132.4 0.706 33.0 2.11 0.304 50.9 9.088 125.7 0.069 -141.9 0.698 19.4 2.12 0.199 38.9 9.530 115.7 0.072 -152.1 0.684 3.3 +90 2.13 0.082 11.6 9.900 104.5 0.071 -163.8 0.665 -14.6 2.14 0.076 -116.4 9.952 92.4 0.073 -174.9 0.652 -35.0 2.15 0.204 -147.0 9.710 80.5 0.068 172.1 0.641 -55.9 2.16 0.328 -161.3 9.243 68.8 0.064 160.5 0.640 -76.1 2.17 0.438 -172.0 8.617 58.1 0.059 151.0 0.647 -94.5 2.1 2.18 0.523 179.6 7.824 48.7 0.051 140.7 0.662 -111.0 2.19 0.598 172.6 7.157 40.2 0.047 132.6 0.673 -124.3 2.2 2.2 0.648 166.5 6.453 32.8 0.040 124.9 0.691 -135.8 2.25 0.788 147.2 3.966 5.9 0.023 96.9 0.753 -171.7 2.3 0.836 137.6 2.609 -10.9 0.014 75.7 0.796 170.6 8 180 12 0 2.35 0.862 130.9 1.839 -24.0 0.010 64.0 0.828 159.6 Scale for |S21| 2.0GHz 2.4 0.877 126.5 1.364 -34.2 0.006 43.1 0.853 151.9 2.5 0.901 119.0 0.826 -49.5 0.003 10.9 0.883 141.3 2.6 0.910 112.6 0.558 -62.6 0.004 17.9 0.899 133.6 2.7 0.913 107.8 0.401 -73.0 0.002 -3.1 0.909 127.7 0.4 2.8 0.917 103.2 0.305 -81.7 0.001 -5.4 0.925 122.5 2.9 0.918 99.0 0.243 -90.1 0.002 -12.9 0.934 117.9 3 0.920 94.8 0.206 -96.9 0.002 -25.9 0.937 114.2 0.6 S 12 -90 S 21
+50j
Scale for |S 12|
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FLL21E040IK
High Voltage - High Power GaAs FET
BOARD LAYOUT

r=3.5 t=0.6mm
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FLL21E040IK
High Voltage - High Power GaAs FET
IK Package Outline Metal-Ceramic Hermetic Package
PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit:mm
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FLL21E040IK
High Voltage - High Power GaAs FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461
Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
TEL +81-45-853-8156 FAX +81-45-853-8170
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