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DATA SHEET
SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
DESCRIPTION
The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band. It is contained in 4 pins mini-mold package which enables high-isolation gain.
PACKAGE DIMENSIONS (Units: mm)
0.4 -0.05 0.4 -0.05 0.4 -0.05 0.16 -0.06
+0.1
2.8 -0.3 +0.2 1.5 -0.1 2 3 4 5 0 to 0.1 5
+0.2 +0.1 +0.1
* NF = 1.5 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA * S21e2 = 12 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 25 12 3.0 70 200 150 -65 to +150 V V mA mW C C
1.1-0.1 0.8
0.6 -0.05
+0.1
V
+0.2
PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Insertion Power Gain Noise Figure Maximum Available Gain SYMBOL ICBO IEBO hFE fT Cob S21e2 NF MAG 9.5 40 6 0.55 12 1.5 14.5 3.0 0.9 MIN. TYP. MAX. 0.1 0.1 200 GHz pF dB dB dB UNIT TEST CONDITIONS VCB = 15 V, IE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA f = 1.0 GHz VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 5 mA, f = 1.0 GHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz
A A
hFE Classification
Class Marking hFE R4/RD * R4 40 to 120 R5/RE * R5 100 to 200 * Old Specification / New Specification
Document No. P10363EJ1V1DS00 (1st edition) Date Published March 1997 N Printed in Japan
1
5
5
(c)
(1.9)
FEATURES
2.90.2 (1.8) 0.85 0.95
+0.1
1987
2SC4092
TYPICAL CHARACTERISTICS (TA = 25 C)
DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 10 V 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 10 V
200
70 50
IC-Collector Current-mA
1 2 5 10 20 50 70
hFE-DC Current Gain
20 10 5 2 1
50 30 20
10 0.5
0.5 0.5
0.6
0.7
0.8
0.9
IC-Collector Current-mA
VBE-Base to Emitter Voltage-V
10
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 10 V
16
INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1 GHz
fT-Gain Bandwidth Product-GHz
|S21e|2-Insertion Gain-dB
3 5 10 30 IC-Collector Current-mA
5
12
2
8
1
4 0.5 1
0 0.5
1
2
5
10
20
40
IC-Collector Current-mA FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 MHz NOISE FIGURE. COLLECTOR CURRENT VCE = 10 V f = 1.2 GHz
7 6
Cre-Feed-back Capafitance-pF
2.0
1.0
NF-Noise Figure-dB
5 4 3 2 1 0 0.5
0.5
0.2
0.1 1 2 5 10 20 30 VCB-Collector to Base Voltage-V
1
2
5
10
20
50 70
IC-Collector Current-mA
2
2SC4092
NF, Ga vs. COLLECTOR CURRENT 7 6 VCE = 10 V f = 1 GHz
NF-Noise Figure-dB
5 4 3
Ga
10
5 2 1 0 1 3 5 7 10 30 IC-Collector Current-mA 0 NF
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.780 0.709 0.567 0.503 0.486 0.488 0.506 0.520 0.528 0.533 0.556 S11 -39.4 -73.6 -114.4 -143.3 -164.3 -179.5 167.5 159.9 149.8 141.8 134.9 S21 13.956 11.808 7.509 5.678 4.155 3.499 2.830 2.588 2.188 2.092 1.794 S21 155.8 130.8 106.5 93.2 80.6 72.3 63.0 55.3 48.5 41.7 36.0 S12 0.027 0.058 0.081 0.093 0.104 0.117 0.129 0.144 0.155 0.173 0.181 S12 62.9 62.3 42.1 39.0 36.8 37.2 36.6 35.9 37.5 35.7 36.1 S22 0.905 0.767 0.542 0.424 0.353 0.301 0.265 0.246 0.217 0.209 0.192 S22 -21.2 -36.3 -50.3 -56.2 -59.3 -63.1 -66.1 -73.4 -79.1 -88.0 -97.8
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.534 0.468 0.428 0.435 0.448 0.464 0.480 0.495 0.511 0.517 0.546 S11 -82.1 -121.0 -157.0 -176.6 170.0 161.0 152.1 146.5 138.9 132.7 127.0 S21 25.861 17.231 9.440 6.738 4.823 4.013 3.232 2.945 2.480 2.364 2.024 S21 136.3 110.2 92.4 83.4 73.7 67.2 59.4 52.7 46.9 40.9 35.9 S12 0.021 0.033 0.051 0.069 0.090 0.107 0.127 0.149 0.164 0.187 0.197 S12 34.8 60.5 50.1 57.2 54.6 54.1 53.5 49.6 49.5 45.2 44.3 S22 0.717 0.481 0.297 0.230 0.197 0.164 0.140 0.131 0.104 0.104 0.094 S22 -41.1 -50.5 -57.8 -59.5 -60.9 -66.3 -70.7 -80.5 -91.4 -103.7 -120.7
Ga-Associated Gain-dB
3
2SC4092
S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 10 V, f = 0.1, 0.2 to 2.0 GHz (Step 200 MHz)
0.11 0.39 100
0.9
0.8
0.6
0.
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 D LOAD TION COEF WAR FLEC FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0G 4 GRE AN 0.4 0.4 ES LEN-160 0 4E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 0.1 NT 14 0.4 6 00 E ITIV 40 ON 0 ER 4 MP 0. -1 EA CO C
5 0.
07 43 0. 0 13
1.6
12
0.7
8 0.0 2 0.4
1.0
1.2
9 0.0 1 0.4
0.10 0.40 110
0.12 0.38
0.13 0.37
90
0.14 0.36 80
0.15 0.35
70
1.4
0.1 6 0.3 4
0
6 00
1.8
0.1 0.3 7 3
0.
2.0
0.2
50
0. 18 32
19 0. 31 0.
( -Z-+-J-XTANCE CO ) MPO
N
T EN
0.4
0 0.2 0 0.3
40
O
WAVELEN G
0.2
0.3
0.4
0.5
0.6
0.7 0.8
0.9 1.0
1.2
1.4
1.6
1.8 2.0
3.0
4.0
5.0
10
20
0.1
0.6
S22e
0. 8
0
0.2
)
E NC TA X - AC -J -O RE --Z
0.3
0.
4
E IV AT
0.
5
2.0
0.6
1.8
1.6
0.7
0.8
0.9
1.2
S21e-FREQUENCY
CONDITION VCE = 10 V 90
S12e-FREQUENCY
120 0.1 GHz
0.2 GHz IC = 20 mA
60
150 IC = 5 mA 0.1 GHz 2 GHz 180 0 4 8 12 16 S21e
30
150
20
0 180
-150
-30
-150
-120 -90
-60
4
4 0.3 6 0.1
0.35 0.15 -70
1.0
1.4
120
S12e IC = 5 mA 0.1 GHz 0 0.04
-120 -90
3.
0
0.1 GHz
0.6
0.1 GHz
-4 0
(
5.0
IC = 5 mA
0.1 GHz
4.0
0.
32
0.
18
-5
0
3 0.3 7 0.1
-6
0
0.36 0.14 -80
1.0
1.
10
2 GHz
0.4
20
S11e
50
REACTANCE COMPONENT R ---- 0.2 ZO
(
)
0.8
0.37 0.13
0.4
0.4
IC = 20 mA
0.6
IC = 5 mA
0 1.
IC = 20 mA
0.8
0.2
0.2
-90
0.38 0.39 0.12 0.11 -100
0.40 0.10
-11
0
0.4 1 0.0 0.4 9 02 -1 .08 20
NE G
-1
0. 4 0. 3 07 30
0.
4
0.6
3.
0.8
0
1 0.2 9 0.2 30
0.3
2 GHz
4.0
0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20
1.0
6.0
0.2
10
0.1
20
50
0.25 0.25
0
0.26 0.24
-10
0.27 0.23
0.2 8 0.2 2 -20
0 .29 0.2 1 0.3 -3 0.2 0 0 0
0. 0. 31 19
CONDITION VCE = 10 V 90 60 2 GHz IC = 20 mA 30
0.08 0.12 0.16 0.2
0
-30
-60
2SC4092
[MEMO]
5
2SC4092
[MEMO]
6
2SC4092
[MEMO]
7
2SC4092
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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