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Advance Product Information April 5, 2006 6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier * * * * * * * TGA2501 Key Features and Performance 34.5 dBm Midband Pout 24 dB Nominal Gain 10 dB Typical Input Return Loss 5 dB Typical Output Return Loss Bias Conditions: 8V @ 1.2A 0.25 m Ku pHEMT 2MI Chip dimensions: 4.3 x 2.9 x 0.1 mm (170 x 115 x 4 mils) X-Ku Point-to-Point ECCM Preliminary Measured Performance Bias Conditions: VD = 8V ID = 1.2A 30 28 26 S21 S11 S22 20 15 10 5 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Primary Applications * * S11,S22 (dB) PAE@Psat (%) S21 (dB) 24 22 20 18 16 14 Frequency (GHz) 36 35 34 33 32 31 30 29 28 27 26 6 7 8 9 10 11 12 13 14 15 16 17 18 Psat PAE 60 55 50 45 40 35 30 25 20 15 10 Psat (dBm) Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Advance Product Information April 5, 2006 Fixtured Performance 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 5 6 7 8 9 TGA2501 S21 (dB) 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 5 6 7 8 9 S21 (dB) -40C 0C +85C 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 2 TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Advance Product Information April 5, 2006 Fixtured Performance 0 -2 -4 S11 S22 TGA2501 S11,S22 (dB) -6 -8 -10 -12 -14 -16 -18 -20 5 40 35 30 8 GHz 11 GHz 13 GHz 15 GHz 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 2600 2400 2200 Pout (dBm) 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 1800 1600 1400 1200 1000 Pin (dBm) 3 TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Id (mA) 25 2000 Advance Product Information April 5, 2006 Fixtured Performance 36.0 35.5 35.0 TGA2501 P2dB Psat Pout (dBm) 34.5 34.0 33.5 33.0 32.5 32.0 6 40 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) P2dB Psat 35 30 PAE (%) 25 20 15 10 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) 4 TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Advance Product Information April 5, 2006 Fixtured Performance 45 44 43 42 TGA2501 TOI (dBm) 41 40 39 38 37 36 35 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 13 IMD3 (dBm) 8 GHz 11 GHz 13 GHz 15 GHz 14 15 16 17 18 19 20 21 22 23 24 Pout / Tone (dBm) 5 TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Advance Product Information April 5, 2006 TGA2501 TABLE I MAXIMUM RATINGS Symbol V I + - Parameter 5/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value 9V -5 V to 0 V 2.0 A 52 mA 26 dBm 14.4 W 150 C 320 C -65 to 150 0C 0 0 Notes 4/ 4/ 6/ 4/ 3/ 4/ 1/ 2/ V + | IG | PIN PD TCH TM TSTG 1/ 2/ These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from 1.6E+6 to 5.4E+4 hours. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings represent the maximum operable values for this device. This current can be doubled by applying gate bias to both gate pads. TABLE II THERMAL INFORMATION PARAMETER Rjc Thermal Resistance (Channel to Backside) TEST CONDITION VD = 8 V ID = 1.2 A PDIS = 9.6 W Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 144.56 7.77 1.6E+6 TCH (qC) RTjc (qC/W) MTTF (HRS) 3/ 4/ 5/ 6/ 6 TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Advance Product Information April 5, 2006 TGA2501 TABLE III DC PROBE TEST (TA = 25 C, nominal) NOTES 1/ 1/ 1/, 2/ 1/, 2/ 1/, 2/ SYMBOL MIN LIMITS MAX UNITS 564 636 1.5 30 30 mA mS V V V IDSS(Q1) GM (Q1) |VP| |VBVGS| |VBVGD| 120 264 0.5 13 13 1/ Q1 is a 1200 m FET 2/ VP, VBVGD, and VBVGS are negative. TABLE IV RF CHARACTERIZATION TABLE (TA = 25qC, nominal) (Vd = 8V, Id = 1.2A r5%) SYMBOL PARAMETER TEST CONDITION TYPICAL UNITS Gain Small Signal Gain F = 6-18 GHz 24 dB IRL Input Return Loss F = 6-18 GHz 10 dB ORL Output Return Loss F = 6-18 GHz 5 dB PWR Output Power @ Pin=+15dBm F = 6-18 GHz 34.5 dBm Note: Table IV Lists the RF Characteristics of typical devices as determined by fixtured measurements. 7 TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Advance Product Information April 5, 2006 TGA2501 Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Advance Product Information April 5, 2006 TGA2501 Chip Assembly & Bonding Diagram 1uF or larger capacitors (not shown) should be on the gate and drain line. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Advance Product Information April 5, 2006 TGA2501 Alternative Chip Assembly & Bonding Diagram 1uF or larger capacitors (not shown) should be on the gate and drain line. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Advance Product Information April 5, 2006 TGA2501 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 11 TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com |
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