 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| WT7822AM Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free D 1 3 DRAIN CURRENT 14 AMPERES DRAIN SOURCE VOLTAGE 25 VOLTAGE S S 8 7 D 2 D 6 S Features: *Super high dense cell design for low RDS(ON) R DS(ON) <7 m@VGS=10V R DS(ON) <9 m@VGS=4.5V *Rugged and Reliable *SO-8 Package D Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient (1) Operating Junction and Storage Temperature Range Symbol VSpike4 VDS VGS ID IDM IS PD R JA TJ, Tstg Value 30 25 Unite V V V A A A W C/W C G 4 5 1 SO-8 + -16 14 56 14 2.5 50 -55 to 150 Device Marking WT7822AM=STM7822A http://www.weitron.com.tw WEITRON 1/6 02-Aug-05 WT7822AM Electrical Characteristics Static (2) Characteristic (TA =25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ 1.2 - Max 2.0 + -100 1 7 9 Unit V V nA uA Drain-Source Breakdown Voltage VGS=0V, ID=250A Gate-Source Threshold Voltage VDS=VGS, ID=250A Gate-Source Leakage Current + VDS=0V, VGS=-16V Zero Gate Voltage Drain Current VDS=20V, VGS=0V Drain-Source On-Resistance VGS=10V, ID=14A VGS=4.5V, ID=10A On-State Drain Current VDS=10V, VGS=10V Forward Transconductance VDS=10V, ID=14A 25 0.7 - 10 rDS (on) ID(on) gfs 6 8 m 28 - A S - Dynamic (3) Input Capacitance VDS=16V, VGS=0V, f=1MHZ Output Capacitance VDS=16V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=16V, VGS=0V, f=1MHZ Ciss Coss Crss - 3640 550 420 PF Switching (3) Turn-On Delay Time VGS =5V,VDD =16V, ID=14A, RGEN=6 Rise Time VGS =5V,VDD =16V, ID=14A, RGEN=6 Turn-Off Time VGS =5V,VDD =16V, ID=14A, RGEN=6 Fall Time VGS =5V,VDD =16V, ID=14A, RGEN=6 Total Gate Charge VGS=10V,VDS=16V,ID=14A VGS=5V,VDS=16V,ID=14A Gate-Source Charge VGS=5V, VDS=16V, ID=14A Gate-Drain Charge VGS=5V, VDS=16V, ID=14A td(on) tr td(off ) tf Qg Qgs Qgd - 12.3 10.2 23.8 12.1 - nS nS nS nS - - 73.9 36.2 11.2 9.9 0.84 nc nc nc V 1.2 Drain-Source Diode Forward Voltage VSD VGS=0V, IS=14A Note: 1. Surface Mounted on FR4 Board t < 10sec. _ < 300us, Duty Cycle < 2%. _ _ 2. Pulse Test : PW 3. Guaranteed by Design, not Subject to Production Testing. 4. Guaranteed when external Rg=6 and tf < tf max. http://www.weitron.com.tw WEITRON 2/6 02-Aug-05 WT7822AM 20 16 12 8 4 0 VGS=2V VGS=2.5V VGS=3V 25 25 C 20 Tj=125 C 15 10 W E IT R O N ID, Drain Current (A) ID, Drain Current (A) VGS=4.5V VGS=10V -55 C 5 0 0 0.5 1 1.5 2 2.5 3 0.0 0.6 1.2 1.8 2.4 3.0 3.6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig.1 Output Characteristics Fig.2 Transfer Characteristics 2.2 6000 C, Capacitance (pF) 4800 3600 2400 1200 0 Crss Ciss RDS(ON), On-Resistance (Normalized) 1.8 1.4 1.0 0.6 0.2 0 -50 VGS=10V ID=14A Coss 0 4 8 12 16 20 24 -25 0 25 50 75 100 125 VDS, Drain-to Source Voltage (V) Tj, Junction Temperature ( C) Fig.3 Capacitance Fig.4 On-Resistance Variation with Temperature 1.6 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 VDS=VGS ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250uA 75 100 125 0 25 50 75 100 125 Tj, Junction Temperature (C) Tj, Junction Temperature (C) Fig.5 Gate Threshold Variation with Temperature Fig.6 Breakdown Voltage Variation with Temperature http://www.weitron.com.tw WEITRON 3/6 02-Aug-05 WT7822AM W E IT R O N 42 20 Is, Source-drain current (A) gFS, Transconductance (S) 35 28 21 14 7 0 10 1 0 0.5 0.6 0.7 0.8 VDS=10V 0 5 10 15 20 25 TJ=25 C 0.9 1.0 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Fig.7 Transconductance Variation with Drain Current Fig.8 Body Diode Forward Voltage Variation with Source Current VGS, Gate to Source Voltage (V) 5 4 3 2 1 0 ID, Drain Current (A) (O N) VDS=16V ID=14A 60 mi t Li 10 m 10 s 0m 10 RD S 1 1s DC s 0.1 0.03 0.1 0 6 12 18 24 30 36 42 48 VGS=10V Single Pulse Tc=25 C 1 10 20 50 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Fig.9 Gate Charge Fig.10 Maximum Safe Operating Area V DD ton V IN D V GS R GEN G 90% t off r t 90% d(off) t 90% 10% f t RL V OUT d(on) t 5 V OUT 10% INVERTED S V IN 50% 10% 50% PULSE WIDTH FIG.11 Switching Test Circuit FIG.12 Switching Waveforms http://www.weitron.com.tw WEITRON 4/6 02-Aug-05 WT7822AM W E IT R O N 10 r(t) ,NORMALIZED TRANSIENT THERMAL RESISTANCE 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 P DM t1 t2 0.01 0.0001 Single Pulse 0.001 0.01 0.1 1 1. R jA (t)=r (t) * R j A 2. R jA=See Datasheet 3. TjM-TA = PDM* R jA(t) 4. Duty Cycle, D=t1/t 2 10 100 SQUARE WAVE PULSE DURATION(SEC) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE http://www.weitron.com.tw WEITRON 5/6 02-Aug-05 WT7822AM SO-8 Package Outline Dimensions Unit:mm 1 L E1 D 7 (4X) A C 7(4X) 2A A1 e B eB SYMBOLS MILLIMETERS MAX MIN A A1 B C D E1 eB e L 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 0 8 http://www.weitron.com.tw WEITRON 6/6 02-Aug-05 |
Price & Availability of STM7822A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |