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| KOM 2125 NEU: 2fach-Silizium-PIN-Fotodiode in SMT NEW: 2-Chip Silicon PIN Photodiode in SMT KOM 2125 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 25 ns) q geeignet fur Vapor-Phase Loten und 400 nm to 1100 nm q Short switching time (typ. 25 ns) q Suitable for vapor-phase and IR-reflow IR-Reflow-Loten q SMT-fahig Anwendungen q Nachlaufsteuerungen q Kantenfuhrung q Industrieelektronik q "Messen/Steuern/Regeln" soldering q Suitable for SMT Applications q Follow-up controls q Edge drives q Industrial electronics q For control and drive circuits Typ Type KOM 2125 Bestellnummer Ordering Code Q62702-K0047 Semiconductor Group 1 01.97 feo06860 KOM 2125 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 80 60 150 Einheit Unit C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 C, Normlicht A, 2856 K) Characteristics (TA = 25 C, standard light A, 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V; Spectral sensitivity Diode A Diode B Symbol Symbol Wert Value 40 ( 30) 100 ( 75) 850 400 ... 1100 Einheit Unit nA/Ix nm nm S S max Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Diode A Diode B A LxB LxW 4 10 2 x 2, 2 x 5 mm2 mm x mm Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Verguoberflache H Distance chip front to case seal Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Diode A Diode B 0.3 60 5 ( 30) 10 ( 30) 0.62 0.90 mm Grad deg. nA A/W Electrons Photon IR S Semiconductor Group 2 KOM 2125 Kennwerte (TA = 25 C, Normlicht A, 2856 K) Characteristics (TA = 25 C, standard light A, 2856 K) (cont'd) Bezeichnung Description Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Anstiegszeit/Abfallzeit Rise and fall time RL = 50 ; VR = 5 V; = 850 nm; IP = 800 A Diode A Diode B Diode A Diode B Symbol Symbol Wert Value 350 ( 300) 38 95 18 25 Einheit Unit mV A ns VO ISC tr, tf Durchlaspannung, IF = 100 mA; E = 0 Forward voltage Kapazitat Capacitance VR = 0 V; f = 1 MHz; E = 0 Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von IP Temperature coefficient of IP Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V Nachweisgrenze, VR = 10 V Detection limit Diode A Diode B Diode A Diode B Diode A Diode B VF C0 1.0 40 100 - 2.6 0.18 V pF TCV TCI mV/K %/K NEP 6.4 x 10- 14 9.1 x 10- 14 3.1 x 1012 3.5 x 1012 W Hz cm * Hz W D* Semiconductor Group 3 KOM 2125 Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) Total power dissipation Ptot = f (TA) Dark current, IR = f (VR), E = 0 normalized to 10 V/25 oC Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 10 V, E = 0, normalized to TA = 25 oC Directional characteristics Srel = f () Semiconductor Group 4 |
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