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| Advance Technical Information PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 110N10P IXTT 110N10P VDSS ID25 RDS(on) = 100 = 110 = 15 V A m Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Maximum Ratings 100 100 20 V V V A A A A mJ J V/ns TO-3P (IXTQ) TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C 110 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 G D S (TAB) TO-268 (IXTT) G S D = Drain TAB = Drain W C C C C G = Gate S = Source D (TAB) Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 1.13/10 Nm/lb.in. 5.5 5.0 g g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150C Characteristic Values Min. Typ. Max. 100 2.5 5.0 100 25 250 15 V V nA A A m Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99132(05/04) (c) 2004 IXYS All rights reserved IXTQ 110N10P IXTT 110N10P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 30 40 3550 VGS = 0 V, VDS = 25 V, f = 1 MHz 1370 440 21 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 4 (External) 25 65 25 110 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 62 S pF pF pF ns ns ns ns nC nC nC 0.31 K/W (TO-3P) 0.21 K/W TO-3P (IXTQ) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 110 250 1.5 130 2.0 A A V ns C TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 50 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2 IXTQ 110N10P IXTT 110N10P Fig. 1. Output Characteristics @ 25C 110 100 90 80 VGS = 10V 9V 220 200 180 160 8V 9V VGS = 10V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes I D - Amperes 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 140 120 100 80 60 7V 6V 8V 7V 6V 5V 1.4 1.6 1.8 2 40 20 0 0 1 2 3 4 5 6 7 8 9 10 V D S - Volts Fig. 3. Output Characteristics @ 150C 110 100 90 80 VGS = 10V 9V 2.4 2.2 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 55A I D = 110A I D - Amperes 70 60 50 40 30 20 10 0 0 0.5 1 1.5 8V 7V 6V 5V V D S - Volts 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 80 70 External Lead Current Limit Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current 3 2.8 2.6 R D S ( o n ) - Normalized 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 25 50 75 VGS = 15V TJ = 175C 60 I D - Amperes TJ = 25C 50 40 30 20 10 0 VGS = 10V I D - Amperes 100 125 150 175 200 225 250 -50 -25 0 TC - Degrees Centigrade 25 50 75 100 125 150 175 (c) 2004 IXYS All rights reserved IXTQ 110N10P IXTT 110N10P Fig. 7. Input Adm ittance 250 225 200 TJ = -40C 25C 150C 70 60 50 Fig. 8. Transconductance g f s - Siemens I D - Amperes 175 150 125 100 75 50 25 0 4 5 6 7 40 30 20 10 0 TJ = -40C 25C 150C 8 9 1 0 1 1 0 50 100 150 200 250 300 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 350 300 250 10 9 8 7 VDS = 50V I D = 55A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 200 150 100 50 0 6 5 4 3 2 1 0 V S D - Volts 0 20 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 40 60 80 100 120 Fig. 11. Capacitance 10000 1000 TJ = 175C Capacitance - picoFarads TC = 25C I D - Amperes C iss R DS(on) Limit 25s 100 100s 1ms 1000 C oss C rss f = 1MHz 100 0 5 10 15 20 25 30 35 40 10 1 10 10ms DC 100 1000 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 V D S - Volts 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2 IXTQ 110N10P IXTT 110N10P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e 1.00 R( t h ) J C - C / W 0.10 0.01 0.1 1 10 100 1000 Pu ls e W id th - m illis e c o n d s (c) 2004 IXYS All rights reserved |
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