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SemiWell Semiconductor Bi-Directional Triode Thyristor
BT138-600
Symbol
2.T2
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) High Commutation dv/dt Non-isolated Type

3.Gate
1.T1
TO-220
General Description
This device is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.
1 2 3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Ratings
600 TC = 101 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms 12 100/110 50 5.0 Over any 20ms period 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass
Units
V A A A2 s W W A V C C g
Jan, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/5
BT138-600
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -4.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Gate Trigger Current VD = 6 V, RL=10
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 15 A, Inst. Measurement
Ratings Min.
0.2 10
Typ.
15
Max.
2.0 1.65 25 25 25 1.5 1.5 1.5 1.5
Unit
IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c)
mA V
mA
V
V
V/
mA C/W
2/5
BT138-600
Fig 1. Gate Characteristics
10
2
Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
Gate Voltage [V]
PGM (5W) PG(AV) (0.5W) 25
10
0
10
1
TJ = 125 C
o
IGM (2A)
TJ = 25 C
10
0
o
10
-1
VGD (0.2V)
1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
18 16
125
Fig 4. On State Current vs. Allowable Case Temperature
Allowable Case Temperature [ oC]
o

360
2
Power Dissipation [W]
14 12 10 8 6 4 2 0 0
= 180 o = 150 o = 120 = 90 = 60 = 30
o o
120
115
: Conduction Angle
o
110

360
= 30
2
o
= 60 = 90
o o o
105
: Conduction Angle
100
= 120o = 150 o = 180
9 12
3
6
9
12
15
0
3
6
15
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
120
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
100
Surge On-State Current [A]
80
o
60Hz
60
VGT (25 C)
VGT (t C)
o
1
40
50Hz
20
0 0 10
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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BT138-600
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
1
Fig 8. Transient Thermal Impedance
1
I I
+ GT1 _ GT1
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
o
10
0
I
_ GT3
0.1 -50
0
50
100
o
150
10
-1
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10

6V

A

A
6V
6V
A
V
RG
V
RG
V
RG
Test Procedure
Test Procedure
Test Procedure
4/5
BT138-600
TO-220 Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O
Min. 9.7 6.3 9.0 12.8 1.2
Max. 10.1 6.7 9.47 13.3 1.4
Min. 0.382 0.248 0.354 0.504 0.047
Max. 0.398 0.264 0.373 0.524 0.055
1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142
E B
A
H
I
F
C M
G 1 D 2 3
L
1. T1 2. T2 3. Gate
N O
J K
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