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THD218DHI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE.
3 2 1
APPLICATIONS s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION This devices is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 1500 700 10 7 12 4 7 50 -65 to 150 150 Uni t V V V A A A A W
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C C
December 1999
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THD218DHI
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.5
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C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO V CE(sat ) V BE(s at) h FE Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain INDUCTIVE LOAD Storage Time Fall T ime Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V IC = 4 A IC = 4 A IC = 4 A IC = 4 A IC = 4 A I B1 = 1 A VCE = 5 V VCE = 5 V IB = 1 A IB = 1 A 5 3.5 4.7 0.48 T j = 125 oC Min. Typ . Max. 0.2 2 300 1.5 1.3 10 Un it mA mA mA V V
T j = 100 C
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ts tf
f = 15625 Hz IB2 = -2 A 6 V c eflybac k = 1050 sin 10 t 5 IF = 4 A
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VF
Diode Forward Voltage
2.5
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
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THD218DHI
Derating Curve DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Fall TimeI
Inductive Storage Time
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THD218DHI
Reverse Biased SOA
BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at both 16 KHz and 32 KHz scanning frequencies for choosing the optimum negative drive. The test circuit is illustrated in Figure 1: Inductive Load Switching Test Circuit.
figure 1. Inductance L 1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 1 L (IC)2 = C (VCEfly)2 = 2 f = 2 2 L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace.
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THD218DHI
ISOWATT218 MECHANICAL DATA
DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP.
MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 20.80 19.10 22.80 40.50 4.85 20.25 2.1
MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3
MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 0.819 0.752 0.898 1.594 0.191 0.797 0.083
MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091
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0.354
4.6 3.5 3.7 0.138
0.181 0.146
- Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended 0.8 Nm; Maximum: 1 Nm : - The side of the dissipator must be flat within 80 m
P025C/A
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THD218DHI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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