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| BBY 52 Silicon Tuning Diode * High Q hyperabrupt dual tuning diode * Designed for low tuning voltage operation * For VCO's in mobile communications equipment Type BBY 52 Marking Ordering Code S5s Q62702-B599 Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 ... + 150 - 55 ... + 150 Unit V mA C VR IF Top Tstg Semiconductor Group 1 Jul-04-1996 BBY 52 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 10 200 nA VR = 6 V, TA = 25 C VR = 6 V, TA = 65 C AC characteristics Diode capacitance CT 1.4 0.85 1.85 1.5 1.35 1.15 1.6 0.9 0.12 2 2.2 1.45 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/CT4 1.1 2.1 1.8 pF nH - VR = 1 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Jul-04-1996 BBY 52 Diode capacitance CT = f (VR) f = 1MHz 2.4 pF CD 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 1.5 2.0 2.5 3.0 V 4.0 VR Package Semiconductor Group 3 Jul-04-1996 |
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