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PRELIMINARY DATA SHEET
GaAs MES FET
NE6501077
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure.
PACKAGE DIMENSIONS (UNIT: mm)
17.5 0.5 14.3 1.0 0.1 GATE SOURCE
FEATURES
* Class A operation * High output power: 39.5 dBm (typ) * High gain: 10.5 dB (typ) * High power added efficiency: 40 % (typ) * Hermetically sealed ceramic package
2.26 0.4 0.2 MAX. 1.0 0.1-0.02
+0.06
2.5 R1.25, 2 PLACES DRAIN 8.9 0.4
6.35 0.4
4.0 MIN BOTH LEADS
3.8 MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Temperature Cycling * TC = 25 C Caution Please handle this device at a static-free workstation, because this is an electrostatic sensitive device. VDSX VGDX VGSX ID IG PT(*) Tch Tstg T 15 -18 -12 9.0 50 50 175 -65 to +175 -40 to +120 V V V A mA W C C C
Document No. P10978EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
(c)
1996
NE6501077
MAXIMUM OPERATION RANGE
CHARACTERISTIC Drain to Source Voltage Channel Temperature Input Power Gate Resistance SYMBOL VDS Tch Gcomp Rg MIN. - - - - TYP. 10 - - - MAX. 10 130 3 100 UNIT V C dBcomp
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance SYMBOL Idss VP gm Rth MIN. 2.0 -3.5 - - TYP. 4.5 -2.0 2600 3.5 MAX. 7.0 -0.5 - 4.0 UNIT A V mS C/W TEST CONDITIONS Vds = 1.5 V, Vgs = 0 V Vds = 2.5 V, Ids = 30 mA Vds = 2.5 V, Ids = 2 A Channel to Case
PERFORMANCE SPECIFICATIONS (TA = 25 C)
CHARACTERISTIC Output Power Gate to Source Current Power Added Efficiency Linear Gain SYMBOL Pout Igs MIN. 39.0 -10 - 9.5 TYP. 39.5 - 40 10.5 MAX. - 10 - - UNIT dBm mA % dB TEST CONDITION f = 2.3 GHz, Vds = 10 V Ids 1.0 A, Pin = 31.0 dBm Rg = 100 Pin 23 dBm(*)
add
GL
* The other are the same as the above conditions.
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NE6501077
TYPICAL CHARACTERISTICS (TA = 25 C)
OUTPUT POWER vs. INPUT POWER 42 VDS = 10 V, IDset = 1.0 A Id (mA) 4 000
Pout 3 200
Pout - Output Power - dBm
39
36 Id
2 400
33
1 600
30
800
27 20
23
26 29 32 Pin - Input Power - dBm
35
0
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NE6501077
S-PARAMETER
VDS = 9.0 V, IDS = 1 000 mA, VGS = -1.514 V, IG = 0.0 mA FREQUENCY S11 GHz MAG 0.050 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.010 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 0.990 0.972 0.971 0.963 0.972 0.969 0.969 0.975 0.972 0.974 0.969 0.970 0.978 0.972 0.978 0.972 0.977 0.974 0.968 0.966 0.972 0.969 0.973 0.961 0.966 0.962 0.964 0.959 0.963 0.958 0.961 0.953 0.955 0.955 0.956 0.952 0.954 0.953 0.959 0.955 0.958 0.954 S21 ANG -77.1 -115.8 -146.6 -159.1 -166.4 -170.7 -174.6 -177.1 -179.4 178.5 176.1 176.1 174.5 172.6 170.8 169.2 167.4 166.0 164.6 162.6 161.3 159.7 158.5 156.8 154.7 153.3 151.6 150.1 148.2 146.5 144.9 143.2 141.2 139.5 137.9 136.3 134.7 132.6 131.0 129.0 127.2 125.2 MAG 18.297 12.578 7.135 4.862 3.726 2.996 2.516 2.183 1.939 1.722 1.556 1.545 1.436 1.328 1.243 1.160 1.106 1.044 0.992 0.951 0.921 0.882 0.858 0.825 0.808 0.784 0.768 0.751 0.738 0.722 0.714 0.699 0.696 0.689 0.683 0.675 0.670 0.667 0.668 0.667 0.671 0.671 ANG 140.3 120.5 103.3 95.7 90.3 87.0 83.4 80.9 78.3 75.9 72.8 72.6 70.4 68.0 65.5 63.1 60.8 58.2 56.1 53.2 50.8 48.4 46.4 43.8 40.7 38.5 35.9 33.5 30.9 28.3 25.8 22.9 19.9 17.4 15.0 12.5 9.8 6.6 4.0 0.9 -1.6 -4.2 MAG 0.005 0.007 0.007 0.008 0.008 0.009 0.009 0.010 0.010 0.010 0.011 0.011 0.011 0.012 0.013 0.013 0.015 0.015 0.016 0.016 0.017 0.018 0.020 0.021 0.022 0.023 0.025 0.026 0.027 0.029 0.030 0.031 0.034 0.035 0.037 0.038 0.040 0.042 0.045 0.047 0.049 0.051 S12 ANG 16.2 16.7 28.1 25.8 26.1 26.1 27.9 31.9 35.2 33.7 37.4 36.8 33.8 38.2 40.7 40.4 40.4 40.6 40.4 39.3 41.4 42.8 42.1 40.9 41.1 38.5 37.2 35.9 33.7 34.1 33.2 29.9 28.9 26.4 24.5 23.1 21.5 20.0 18.1 15.5 12.9 11.6 MAG 0.822 0.847 0.863 0.863 0.869 0.868 0.867 0.872 0.881 0.865 0.862 0.863 0.867 0.863 0.867 0.861 0.871 0.861 0.857 0.857 0.867 0.857 0.861 0.849 0.854 0.852 0.857 0.852 0.853 0.851 0.851 0.842 0.844 0.839 0.839 0.833 0.831 0.827 0.828 0.820 0.813 0.805 S22 ANG -177.8 -178.1 179.5 178.1 176.3 175.5 174.0 173.3 172.9 171.3 169.8 169.9 168.9 167.8 166.9 165.9 165.0 163.4 162.7 161.2 159.9 158.5 157.6 156.1 154.2 153.0 151.4 149.9 148.5 146.7 145.6 143.9 142.1 140.7 139.5 138.1 136.9 135.3 134.2 132.5 131.1 129.8
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NE6501077
VDS = 10.0 V, IDS = 1 000 mA, VGS = -1.552 V, IG = 0.0 mA FREQUENCY S11 GHz MAG 0.050 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 0.984 0.974 0.970 0.962 0.971 0.969 0.969 0.974 0.972 0.973 0.968 0.977 0.971 0.977 0.971 0.976 0.973 0.967 0.965 0.971 0.968 0.972 0.960 0.965 0.962 0.962 0.958 0.962 0.957 0.961 0.952 0.954 0.954 0.955 0.951 0.953 0.952 0.958 0.954 0.957 0.954 S21 ANG -76.4 -115.7 -146.6 -159.0 -166.4 -170.7 -174.6 -177.1 -179.5 178.4 176.0 174.5 172.5 170.7 169.1 167.4 166.0 164.5 162.5 161.2 159.7 158.5 156.8 154.7 153.2 151.5 149.9 148.1 146.4 144.8 143.1 141.1 139.4 137.8 136.2 134.7 132.5 130.9 128.9 127.1 125.2 MAG 18.696 12.798 7.261 4.949 3.794 3.049 2.561 2.220 1.969 1.751 1.582 1.460 1.349 1.264 1.179 1.124 1.060 1.007 0.964 0.934 0.894 0.870 0.835 0.818 0.794 0.778 0.760 0.747 0.729 0.721 0.705 0.702 0.694 0.688 0.680 0.674 0.671 0.672 0.671 0.674 0.673 ANG 140.1 120.5 103.2 95.6 90.1 86.8 83.2 80.6 77.9 75.4 72.4 70.0 67.5 64.9 62.5 60.1 57.5 55.4 52.5 50.0 47.6 45.6 43.0 39.8 37.6 35.0 32.5 30.0 27.2 24.7 21.8 18.9 16.3 13.9 11.4 8.7 5.4 2.8 -0.3 -2.8 -5.5 MAG 0.006 0.006 0.007 0.007 0.008 0.008 0.009 0.009 0.010 0.010 0.010 0.011 0.012 0.013 0.013 0.015 0.015 0.015 0.016 0.017 0.018 0.020 0.021 0.021 0.023 0.024 0.026 0.027 0.028 0.030 0.031 0.033 0.035 0.036 0.038 0.039 0.041 0.045 0.047 0.048 0.051 S12 ANG 23.7 28.6 22.0 25.6 25.9 26.1 27.6 32.5 34.1 34.6 35.5 34.6 37.1 38.0 38.8 39.7 39.5 39.8 41.6 42.5 41.5 41.5 41.0 39.9 38.7 37.5 35.8 33.4 33.4 32.1 29.5 28.5 25.7 24.7 24.0 21.3 19.8 17.4 14.3 12.5 12.0 MAG 0.812 0.840 0.857 0.855 0.862 0.862 0.861 0.865 0.873 0.859 0.856 0.860 0.856 0.860 0.855 0.865 0.854 0.850 0.851 0.860 0.850 0.854 0.843 0.847 0.846 0.850 0.847 0.846 0.844 0.845 0.836 0.838 0.834 0.834 0.828 0.825 0.822 0.823 0.814 0.809 0.800 S22 ANG -177.7 -178.1 179.6 178.0 176.4 175.5 174.1 173.5 172.9 171.3 169.9 169.1 167.9 167.0 166.0 165.1 163.5 162.8 161.4 160.0 158.7 157.8 156.3 154.4 153.3 151.7 150.3 148.8 147.0 145.9 144.3 142.4 141.1 139.9 138.5 137.3 135.7 134.6 133.0 131.6 130.4
5
NE6501077
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
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