 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AP90T03GR Pb Free Plating Product Advanced Power Electronics Corp. Lower On- resistance Simple Drive Requirement Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 4m 75A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-262(R) Absolute Maximum Ratings Symbol VDS VGS ID@Tc=25 ID@Tc=100 IDM PD@Tc=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1 Rating 30 20 75 63 350 96 0.7 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.3 62 Units /W /W Data and specifications subject to change without notice 200120041 AP90T03GR Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 30 0.8 - Typ. 0.02 55 60 8.5 38 14 83 66 120 1010 890 Max. Units 4 6 3 1 25 100 96 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=45A VGS=4.5V, ID=30A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC) o VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= 20V ID=40A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3,VGS=10V RD=0.5 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 4090 6540 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=45A, VGS=0V IS=30A, VGS=0V, dI/dt=100A/s Min. - Typ. 51 63 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP90T03GR 200 160 T C =25 C 160 o ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V 140 T C = 1 50 o C 120 10V 7.0V 5.0V 4.5V 100 120 V G =3.0V 80 80 V G =3.0V 60 40 40 20 0 0 1 2 3 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 5.0 2.0 I D =20A Normalized R DS(ON) T C =25 C RDS(ON) (m ) 4.5 1.8 o 1.5 I D = 45 A V G =10V 1.3 1.0 0.8 4.0 0.5 0.3 3.5 0.0 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 20 15 1.5 VGS(th) (V) T j =150 o C Is (A) 10 T j =25 o C 1 5 0.5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 25 100 175 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP90T03GR f=1.0MHz 14 10000 I D = 40 A VGS , Gate to Source Voltage (V) 12 10 V DS =15V V DS =20V V DS =24V C (pF) 1000 C iss 8 C oss C rss 6 4 2 0 100 0 20 40 60 80 100 120 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (R thjc) Duty factor=0.5 100 0.2 ID (A) 0.1 1ms 0.1 0.05 PDM 0.02 10 10ms t T 0.01 Single Pulse T c =25 o C Single Pulse 1 0.1 1 10 100ms DC 100 Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
Price & Availability of AP90T03GR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |