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Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm 3.00.5 For power amplification For TV VM circuit Features * Satisfactory linearity of forward current transfer ratio hFE * High transition frequency (fT) * Full-pack package which can be installed to the heat sink with one screw. 15.00.5 9.90.3 4.60.2 2.90.2 3.20.1 13.70.2 4.20.2 Solder Dip 1.40.2 1.60.2 0.80.1 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -180 -180 -6 -1.5 -3 20 2.0 150 -55 to +150 C C Unit V V V A A W 2.540.30 5.080.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Internal Connection C B E Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Symbol VCEO ICBO IEBO hFE VCE(sat) fT Cob ton tstg tf Conditions IC = -10 mA, IB = 0 VCB = -180 V, IE = 0 VEB = -6 V, IC = 0 VCE = -5 V, IC = - 0.1 A IC = -1 A, IB = - 0.1 A VCE = -10 V, IC = - 0.2 A, f = 10 MHz VCB = -10 V, IE = 0, f = 1 MHz IC = - 0.4 A, Resistance loaded IB1 = 0.04 A, IB2 = - 0.04 A VCC = 100 V Min -180 Typ Max -100 -100 Unit V A A V MHz pF s s s 60 240 - 0.5 100 30 0.1 1.0 0.1 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 60 to 140 P 120 to 240 Publication date: July 2004 SJD00316AED 1 2SA2140 PC Ta 35 (1) TC = Ta (2) Without heat sink 10 ICP IC Safe operation area Non repetitive pulse, TC = 25C Collector power dissipation PC (W) 30 25 (1) 20 15 Collector current IC (A) 1 0.1 10 5 (2) 0 0 20 40 60 80 100 120 140 160 0.01 t = 1 ms t = 10 ms t=1s 1 10 100 1 000 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) 2 SJD00316AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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