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 Advance Product Information
May 3, 2000
17-21 GHz Intermediate Power Amplifier
* * * * * *
TGA9088A-EPU
Key Features and Performance
0.25um pHEMT Technology 17-21GHz Frequency Range 22 dBm @ P2dB Nominal Pout 18.5 dBm Nominal Gain IRL>18 dB, ORL>10 dB 7V, 66mA Self Bias
Primary Applications
Chip Dimensions 2.41mm x 1.52 mm x 0.1mm
* *
Satellite Systems Point-to-Point Radio
EG1901A (TGA9088A), LOT # 9733701-1,2,3: On-Wafer-Testing (1640 Devices) Self Bias @ V+ = 5V, Vd = 7V, Id >= 56 mA
24 22 Output Power @ 2dB Compression (dBm) 20 18 16
Gain (dB) 24 22 20 18 16
EG1901A (TGA9088A), LOT # 9733701-1,2,3: On-Wafer-Testing (1640 Devices) Self Bias @ V+ = 5V, Vd = 7V, Id >= 56 mA
14 12 10 8 6 4 2 0 17.0 17.5 18.0 18.5 19.0 Frequency (G z) H 19.5 20.0 20.5 21.0
m ean X-s X+s
14 12 10 8 6 4 2 0 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0
m ean X-s X+s
Frequency (GHz)
Measured Pout at 2dB Gain Compression
Measured Small Signal Gain
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
May 3, 2000
TGA9088A
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 3, 2000
TGA9088A
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 3, 2000
TGA9088A Assembly Process Notes
Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical
Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com


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