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| BC 856 ... BC 860 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) BC 856 Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Peak Emitter current - Emitter-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM IEM Tj TS 65 V 80 V Grenzwerte (TA = 25/C) BC 857/860 45 V 50 V 5V 250 mW 1) 100 mA 200 mA 200 mA 200 mA 150/C - 65...+ 150/C BC 858/859 30 V 30 V Characteristics (Tj = 25/C) Group A DC current gain - Kollektor-Basis-Stromverhaltnis 2) - VCE = 5 V, - IC = 10 :A - VCE = 5 V, - IC = 2 mA Small signal current gain Kleinsignal-Stromverstarkung Input impedance - Eingangs-Impedanz Output admittance - Ausgangs-Leitwert Reverse voltage transfer ratio Spannungsruckwirkung 1 Kennwerte (Tj = 25/C) Group B typ. 150 200...450 Group C typ. 270 420...800 hFE hFE typ. 90 110...220 h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz hfe hie hoe hre typ. 220 1.6...4.5 kS 18 < 30 :S typ.1.5 *10-4 typ. 330 3.2...8.5 kS 30 < 60 :S typ. 2 *10-4 typ. 600 6...15 kS 60 < 110 :S typ. 3 *10-4 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 14 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector saturation volt. - Kollektor-Sattigungsspannung 1) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter voltage - Basis-Emitter-Spannung 1) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 30 V IE = 0, - VCB = 30 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 5 V Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz - VCE = 5 V, - IC = 200 :A RG = 2 kS, f = 30...15 kHz - VCE = 5 V, - IC = 200 :A RG = 2 kS, f = 10 ... 50 Hz BC 856... F BC 858 BC 859/860 BC 859 BC 860 F F F - - - - fT CCB0 100 MHz - - - - IEB0 - - - ICB0 - ICB0 - - - - - VBEon - VBEon 600 mV - -VCEsat -VCEsat - VBEsat - VBEsat - - - - BC 856 ... BC 860 Kennwerte (Tj = 25/C) Typ. 90 mV 200 mV 700 mV 900 mV 650 mV - Max. 250 mV 600 mV - - 750 mV 820 mV 15 nA 5 :A 100 nA - 6 pF Base saturation voltage - Basis-Sattigungsspannung 1) Collector-Base Capacitance - Kollektor-Basis-Kapazitat 2 dB 1 dB 1.2 dB 1.2 dB 10 dB 4 dB 4 dB 4 dB 0.11 :V 420 K/W 2) Equivalent noise voltage - Aquivalente Rauschspannung BC 860 uF - RthA BC 846 ... BC 850 BC 856A = 3A Marking of available current gain groups per type Stempelung der lieferbaren Stromverstarkungsgruppen pro Typ BC 857A = 3E BC 858A = 3J BC 856B = 3B BC 857B = 3F BC 858B = 3K BC 859B = 4B BC 860B = 4F BC 857C = 3G BC 858C = 3L BC 859C = 4C BC 860C = 4G - Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 15 |
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