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| BB 659 Silicon Tuning Diode * For VHF-TV-tuners * High capacitance ratio * Low series inductance * Low series resistance * Extremely small plastic SMD package * Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 659 BB 659 Marking Ordering Code D D Q62702-B0875 unmatched Q62702-B0854 inline matched Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R 5k) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55 ...+150 -55 ...+150 mA C Unit V VR VRM IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-28-1998 1998-11-01 BB 659 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 100 Unit IR IR - nA VR = 30 V Reverse current VR = 30 V, TA = 85 C AC characteristics Diode capacitance CT 36 27.5 2.5 2.4 38.3 30.1 2.89 2.6 10.4 14.7 40 32 3.2 2.9 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 9.8 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 13.5 CT/C T - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching 1) % 0.3 0.4 0.65 0.6 1 2 0.7 nH VR = 1V to 28V , f = 1 MHz, 4 diodes sequence VR = 1V to 28V , f = 1 MHz, 7 diodes sequence Series resistance rs Ls - VR = 5 V, f = 470 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Jul-28-1998 1998-11-01 BB 659 Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -3 40 pF 1/C CT 30 T Cc 25 10 -4 20 15 10 5 10 -5 0 10 0 0 5 10 15 20 V 30 10 1 V 10 2 VR VR Reverse current I R = f (VR) T A = Parameter 10 3 pA 85C Reverse current IR = f (TA) VR = 28V 10 3 pA IR 10 2 IR 10 2 25C 10 1 10 1 10 0 10 -1 0 10 10 1 V 10 2 10 0 -30 -10 10 30 50 70 C 100 VR TA Semiconductor Group Semiconductor Group 33 Jul-28-1998 1998-11-01 |
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