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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAT54 series Schottky barrier (double) diodes Product specification Supersedes data of 2001 Oct 12 2002 Mar 04 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES * Low forward voltage * Guard ring protected * Small plastic SMD package. APPLICATIONS * Ultra high-speed switching * Voltage clamping * Protection circuits * Blocking diodes. DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. Top view handbook, 2 columns BAT54 series PINNING DESCRIPTION PIN BAT54 1 2 3 a n.c. k BAT54A k1 k2 a1, a2 BAT54C a1 a2 k1, k2 BAT54S a1 k2 k1, a2 3 1 2 MGC421 MARKING TYPE NUMBER BAT54 BAT54A BAT54C BAT54S Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. = W: Made in China. MARKING CODE(1) Fig.1 Simplified outline (SOT23) and pin configuration. L4 L42 or V3 L43 or W1 L44 or V4 1 3 2 n.c. MLC357 3 1 2 MLC360 (1) BAT54 (2) BAT54A 3 1 2 MLC359 3 1 2 MLC358 (3) BAT54C (4) BAT54S Fig.2 Diode configuration and symbol. 2002 Mar 04 2 Philips Semiconductors Product specification Schottky barrier (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Per device Ptot total power dissipation Tamb 25 C - continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature tp 1 s; 0.5 tp < 10 ms - - - - PARAMETER CONDITIONS BAT54 series MIN. MAX. UNIT 30 200 300 600 +150 125 V mA mA mA C C mW -65 - 230 THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT23 standard mounting conditions. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR trr reverse current reverse recovery time VR = 25 V; see Fig.4 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.6 f = 1 MHz; VR = 1 V; see Fig.5 240 320 400 500 800 2 5 mV mV mV mV mV A ns PARAMETER CONDITIONS MAX. UNIT PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W Cd diode capacitance 10 pF 2002 Mar 04 3 Philips Semiconductors Product specification Schottky barrier (double) diodes BAT54 series MSA892 10 3 handbook, halfpage IF (mA) 10 2 (1) (2) (3) 10 3 IR (A) 10 2 (2) (1) MSA893 10 10 1 (1) (2) (3) 1 (3) 10 1 0 0.4 0.8 VF (V) 1.2 10 1 0 10 20 VR (V) 30 (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.3 Forward current as a function of forward voltage; typical values. Fig.4 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 15 MSA891 Cd (pF) handbook, halfpage I F dI F 10 dt 10% t 5 Qr 90% IR tf MRC129 - 1 0 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 C. Fig.5 Diode capacitance as a function of reverse voltage; typical values. Fig.6 Reverse recovery definitions. 2002 Mar 04 4 Philips Semiconductors Product specification Schottky barrier (double) diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads BAT54 series SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2002 Mar 04 5 Philips Semiconductors Product specification Schottky barrier (double) diodes DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS BAT54 series This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 Mar 04 6 Philips Semiconductors Product specification Schottky barrier (double) diodes NOTES BAT54 series 2002 Mar 04 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp8 Date of release: 2002 Mar 04 Document order number: 9397 750 09408 |
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