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| LESHAN RADIO COMPANY, LTD. SCHOTTKY Barrier Diode BAS70LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 1 2 CASE 318-08, STYLE 11 SOT-23 (TO-236AB) * 70V SCHOTTKY BARRIER DIODES 3 * Extremely Fast Switching Speed * Low Forward Voltage -- 0.75 Volts (Typ) @ I = 10 mAdc F ANODE 1 CATHODE 3 DEVICE MARKING BAS70LT1= BE MAXIMUM RATINGS (TJ = 150C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Operating Junction and Storage Temperature Range Symbol VR PF 225 1.8 TJ, Tstg -55 to +150 mW mW/C C Value 70 Unit Volts ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 50 V) (VR = 70V) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 15 mAdc) Symbol V(BR)R CT IR VF VF VF Min 70 -- -- -- -- -- -- Max -- 2.0 0.1 10 410 750 1.0 Unit Volts pF Adc mVdc mVdc Vdc BAS70LT1-1/2 LESHAN RADIO COMPANY, LTD. BAS70LT1 100 100 IR, REVERSE CURRENT ( A) 10 IF, FORWARD CURRENT (mA) 10 1.0 0.1 1.0 0.01 0.1 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5.0 10 15 20 25 30 35 40 45 50 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Typical Forward Current Figure 2. Reverse Current Versus Reverse Voltage 1.4 1.2 1.0 CT, CAPACITANCE (pF) 0.8 0.6 0.4 0.2 0 0 5.0 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (V) Figure 3. Typical Current BAS70LT1-2/2 |
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