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TO-220S Thyristor with built-in reverse diode for HID lamp ignition TFC561D s Features qRepetitive peak off-state voltage: VDRM=600V qRepetitive peak surge on-state current: ITRM=430A +0.3 10.0 -0.5 External Dimensions (Unit: mm) (1.4) 10.20.3 4.440.2 1.30.2 qCritical rate-of-rise of on-state current: di/dt=1200A /s qGate trigger current: IGT=20mA max qWith built-in reverse diode 1.20.2 11.30.5 8.60.3 1.270.2 +0.2 0.86 -0.1 0.760.1 2.540.5 2.590.2 11.00.5 2.540.5 0.40.1 (1) (2) (3) (1). Cathode (K) (2). Anode (A) (3). Gate (G) Weight: Approx. 1.5g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage Repetitive surge peak on-state current Critical rate-of-rise of on-state current Peak forward gate current Peak gate power loss Average gate power loss Peak reverse gate voltage Diode repetitive peak surge forward current Junction temperature Storage temperature Symbol VDRM ITRM di/dt IFGM PGM PG (AV) VRGM IFRM Tj Tstg Ratings 600 430 1200 2.0 5.0 0.5 5 240 - 40 to +125 - 40 to +125 Unit V A A/s A W W V A C C Conditions Tj= - 40 to +125C, RGK=1k VD 430V, 100kcycle, Wp=1.3s, Ta=125C V 50Hz, duty 50Hz, duty 50Hz 430V, 100kcycle, Wp=1.3s, Ta=125C 10% 10% V f f f VD V V The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles. Measurement circuit L Current waveform (1cycle) (Ta=25C) VD Sample G1 C G2 100A/div 2s/div sElectrical Characteristics Parameter On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Off-state current (1) Off-state current (2) Thermal resistance Diode forward voltage (Tj=25C) Symbol VTM VGT IGT VGD IH IDRM (1) IDRM (2) Rth VF Ratings min typ max 1.4 1.5 20 0.1 2 10.0 100 1 4.0 1.4 Unit V V mA V mA A mA C/W V IT=10A Conditions VD=6V, RL=10 VD=6V, RL=10 VD=480V, Tj=125C RG-K=1k, Tj=25C VD=VDRM, RG-K=1k, Tj=25C VD=VDRM, RG-K=1k, Tj=125C Junction to case IF=10A 24 |
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