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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D848
CGD923 870 MHz, 20 dB gain power doubler amplifier
Product specification 2002 Oct 08
Philips Semiconductors
Product specification
870 MHz, 20 dB gain power doubler amplifier
FEATURES * High output capability * Excellent linearity * Extremely low noise * Excellent return loss properties * Rugged construction * Gold metallization ensures excellent reliability * Adjustable supply current. APPLICATIONS * CATV systems operating in the 40 to 870 MHz frequency range. DESCRIPTION Hybrid amplifier module in a SOT115AE package operating at a voltage supply of 24 V (DC), employing both GaAs and Si dies.
Side view 1 2 3 4 5 7 8 9
CGD923
PINNING - SOT115AE PIN 1 2 and 3 4 5 7 and 8 9 input common IDC adjust +VB common output DESCRIPTION
MGU820
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain total current consumption (DC) CONDITIONS f = 45 MHz f = 870 MHz VB = 24 V pin 4 not connected pin 4 connected to ground LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi supply voltage RF input voltage single tone 132 channels flat Tstg Tmb IDC adjust storage temperature operating mounting base temperature DC current adjust - - -40 -20 -10 70 45 +100 +100 0 dBmV dBmV C C mA PARAMETER - MIN. MAX. 30 V UNIT MIN. 19.25 19.5 - 460 385 MAX. 19.75 20.5 - 490 415 mA mA UNIT dB dB
2002 Oct 08
2
Philips Semiconductors
Product specification
870 MHz, 20 dB gain power doubler amplifier
CHARACTERISTICS Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 . SYMBOL Gp SL FL PARAMETER power gain slope straight line flatness straight line f = 45 MHz f = 870 MHz f = 45 to 870 MHz f = 45 to 100 MHz f = 100 to 800 MHz f = 800 to 870 MHz s11 input return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 870 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 870 MHz s21 s12 NF phase response reverse isolation noise figure f = 50 MHz RFout to RFin f = 50 MHz f = 870 MHz Pin 4 not connected Itot CTB total current consumption (DC) composite triple beat note 2 79 chs; fm = 445.25 MHz; note 1 79 chs flat; Vo = 50 dBmV; fm = 547.25 MHz 132 chs flat; Vo = 48 dBmV; fm = 745.25 MHz Xmod cross modulation 79 chs; fm = 55.25 MHz; note 1 79 chs flat; Vo = 50 dBmV; fm = 55.25 MHz 132 chs flat; Vo = 48 dBmV; fm = 55.25 MHz CSOsum composite second order distortion (sum) 79 chs; fm = 446.5 MHz; note 1 79 chs flat; Vo = 50 dBmV; fm = 548.5 MHz 132 chs flat; Vo = 48 dBmV; fm = 860.5 MHz CSOdiff composite second order distortion (diff) 79 chs; fm = 150 MHz; note 1 79 chs flat; Vo = 50 dBmV; fm = 150 MHz 132 chs flat; Vo = 48 dBmV; fm = 150 MHz 460 - - - - - - - - - - - - 475 - - - - - - - - - - - - CONDITIONS MIN. 19.25 19.5 0.0 -0.2 -0.6 -0.45 20 19 18 17 16 20 19 18 17 16 -45 - - - TYP. 19.5 20.0 0.5 - - - - - - - - - - - - - - - - -
CGD923
MAX. 19.75 20.5 1.0 +0.2 +0.4 +0.2 - - - - - - - - - - +45 22 5 5.5
UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB
490 -64 -64 -56 -57 -57 -57 -60 -60 -54 -60 -60 -56
mA dB dB dB dB dB dB dB dB dB dB dB dB
2002 Oct 08
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Philips Semiconductors
Product specification
870 MHz, 20 dB gain power doubler amplifier
CGD923
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pin 4 connected to ground Itot CTB total current consumption (DC) composite triple beat note 3 79 chs; fm = 445.25 MHz; notes 1 and 3 79 chs flat; Vo = 50 dBmV; fm = 547.25 MHz 132 chs flat; Vo = 48 dBmV; fm = 745.25 MHz Xmod cross modulation 79 chs; fm = 55.25 MHz; notes 1 and 3 79 chs flat; Vo = 50 dBmV; fm = 55.25 MHz 132 chs flat; Vo = 48 dBmV; fm = 55.25 MHz CSO Sum composite second order distortion (sum) 79 chs; fm = 446.5 MHz; notes 1 and 3 79 chs flat; Vo = 50 dBmV; fm = 548.5 MHz 132 chs flat; Vo = 48 dBmV; fm = 860.5 MHz CSO Diff composite second order distortion (diff) 79 chs; fm = 150 MHz; notes 1 and 3 79 chs flat; Vo = 50 dBmV; fm = 150 MHz 132 chs flat; Vo = 48 dBmV; fm = 150 MHz Notes 1. Vo = 58 dBmV at 870 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz. 2. Pin 4 is not connected. 3. Pin 4 connected to ground. 395 - - - - - - - - - - - - 400 - - - - - - - - - - - - 415 -62 -62 -54 -55 -55 -55 -60 -60 -54 -60 -60 -56 mA dB dB dB dB dB dB dB dB dB dB dB dB
2002 Oct 08
4
Philips Semiconductors
Product specification
870 MHz, 20 dB gain power doubler amplifier
PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 8 gold-plated in-line leads
CGD923
SOT115AE
E Z
D p
A2 1 A L F S W e d U2 B yM B p q1 yM B Q e1 q2 yM B 2 3 4 5 7 8 9
c
b
wM
U1
q
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c D d E max. max. max. e e1 F L min. 8.8 p 4.15 3.85 Q max. 2.4 q q1 q2 S U1 max. U2 8 W w y 0.1 Z max. 12
mm 20.8
0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38
38.1 25.4 10.2
4.2 44.75
6-32 0.25 UNC
OUTLINE VERSION SOT115AE
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 02-08-28
2002 Oct 08
5
Philips Semiconductors
Product specification
870 MHz, 20 dB gain power doubler amplifier
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
CGD923
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Oct 08
6
Philips Semiconductors
Product specification
870 MHz, 20 dB gain power doubler amplifier
CGD923
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
2002 Oct 08
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/01/pp8
Date of release: 2002
Oct 08
Document order number:
9397 750 10106

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