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4.8 V NPN Common Emitter Output Power Transistor for AMPS, ET ACS Phones Technical Data
AT-33225
Features
* 4.8 Volt Operation * +31.0 dBm Pout @ 900 MHz, Typ. * 70% Collector Efficiency @ 900 MHz, Typ. * 9 dB Power Gain @ 900 MHz, Typ. * -29 dBc IMD3 @ Pout of 24 dBm per tone, 900 MHz, Typ. * Internal Input Pre-Matching Facilitates Cascading * 50% Smaller than SOT-223 Package
MSOP-3 Surface Mount Plastic Package
Outline 25
Description
Hewlett Packard's AT-33225 is a low cost, NPN power silicon bipolar junction transistor housed in a miniature MSOP-3 surface mount plastic package. This device is designed for use as an output device for AMPS and ETACS mobile phones. The AT-33225 features over 1 watt CW output power when operated at 4.8 volts. Excellent gain and superior efficiency make the AT-33225 ideal for use in battery powered systems. The AT-33225 is fabricated with Hewlett Packard's 10 GHz Ft SelfAligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.
Pin Configuration
COLLECTOR
4
EMITTER 1
2
BASE
3 EMITTER
Applications
* Output Power Device for AMPS and ETACS Handsets * 900 MHz ISM
4-71
5965-5910E
AT-33225 Absolute Maximum Ratings
Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2] Junction Temperature Storage Temperature Units V V V mA W C C Absolute Maximum[1] 1.4 16.0 9.5 640 1.6 150 -65 to 150 Thermal Resistance[3]: jc = 40C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Derate at 25 mW/C for TC > 85C. Tc is defined to be the temperature of the collector pin 4, where the lead contacts the circuit board. 3. Using the liquid crystal technique, VCE = 4.5 V, Ic = 100 mA, Tj =150C, 1- 2 m "hot-spot" resolution.
Electrical Specifications, TC = 25C
Symbol Parameters and Test Conditions
Freq. = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A, unless otherwise specified
Units
Min.
Typ. Max.
Pout C IMD3
Output Power [1] Collector Efficiency [1] 3rd Order Intermodulation Distortion, 2 Tone Test, Pout each Tone = +24 dBm [1] Mismatch Tolerance, No Damage [1]
Pin = +22 dBm Pin = +22 dBm F1 = 899 MHz F2 = 901 MHz
dBm % dBc
+30.0 60
+31.0 70 -29 7:1
Pout = +31 dBm any phase, 2 sec duration IE = 0.4 mA, open collector IC = 2.0 mA, open emitter IC = 10.0 mA, open base VCE = 3 V, IC = 180 mA VCEO = 5 V V V V -- A 1.4 16.0 9.5 80 150
BVEBO BVCBO BVCEO hFE ICEO
Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Forward Current Transfer Ratio Collector Leakage Current
330 30
Note: 1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (ETACS/ISM).
4-72
AT-33225 Typical Performance, TC = 25C
Frequency = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A (ETACS/ISM), unless otherwise specified.
33 30
COLLECTOR EFFICIENCY (%)
30
27 24 21 18 15 12 9 6 2 6 10 14 18 INPUT POWER (dBm) Pout
70 60 50
COLLECTOR EFFICIENCY (%)
source = 0.82 -163 load = 0.67 -174
90 80
35
source = 0.82 -163 load = 0.67 -174
90 80 70 60 50 40 30 20 10 0 2
source = 0.82 -163 load = 0.67 -174
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
25 20 15 10 5 0 2 6 10 14 18 22 24 INPUT POWER (dBm) 3.6 V 4.8 V 6.0 V
c
40 30 20 10 0 22 24
3.6 V 4.8 V 6.0 V 6 10 14 18 22 24
INPUT POWER (dBm)
Figure 1. Output Power and Collector Efficiency vs. Input Power.
Figure 2. Output Power vs. Input Power Over Bias Voltage.
Figure 3. Collector Efficiency vs. Input Power Over Bias Voltage.
34 30
source = 0.82 -163 load = 0.67 -174
-15 -20 -25
source = 0.82 -163 load = 0.67 -174
RETURN LOSS (dB)
5 0 -5 -10 -15 -20
source = 0.82 -163 load = 0.67 -174
Output R.L.
OUTPUT POWER (dBm)
26 22 18 14 10 6 2 6 10 TC = +85C TC = +25C TC = -40C 14 18 22 24
IMD (dBc)
-30 -35 -40 -45 11 IMD3
Input R.L. -25 -30 800
IMD5 13 15 17 19 21 23 25 27
850
900
950
1000
INPUT POWER (dBm)
OUTPUT POWER/TONE (dBm)
FREQUENCY (MHz)
Figure 4. Output Power vs. Input Power Over Temperature.
Figure 5. IMD3, IMD5 vs. Output Power Per Tone.
Figure 6. Input and Output Return Loss vs. Frequency.
4-73
AT-33225 Typical Performance, TC = 25C
Frequency = 836.5 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit B (AMPS), unless otherwise specified.
33 30
OUTPUT POWER (dBm) COLLECTOR EFFICIENCY (%)
30
OUTPUT POWER (dBm)
27 24 21 18 15 12 9 6 2 6 10 14 18 INPUT POWER (dBm) Pout
70 60 50
COLLECTOR EFFICIENCY (%)
source = 0.81 -165 load = 0.66 -174
90 80
35
source = 0.81 -165 load = 0.66 -174
90 80 70 60 50 40 30 20 10 0 2
source = 0.81 -165 load = 0.66 -174
25 20 15 10 5 0 2 6 10 14 18 22 24 INPUT POWER (dBm) 3.6 V 4.8 V 6.0 V
c
40 30 20 10 0 22 24
3.6 V 4.8 V 6.0 V 6 10 14 18 22 24
INPUT POWER (dBm)
Figure 7. Output Power and Collector Efficiency vs. Input Power.
Figure 8. Output Power vs. Input Power Over Bias Voltage.
Figure 9. Collector Efficiency vs. InputPower Over Bias Voltage.
5 0
RETURN LOSS (dB)
source = 0.81 -165 load = 0.66 -174
Output R.L.
-5 -10 -15
Input R.L. -20 -25 750
800
836.5
850
900
950
FREQUENCY (MHz)
Figure 10. Input and Output Return Loss vs. Frequency.
4-74
AT-33225 Typical Large Signal Impedances
VCE = 4.8 V, ICQ = 6 mA, Pout = +31.0 dBm Freq. MHz 750 800 850 900 950 Mag. 0.77 0.80 0.82 0.82 0.83
source
10.0 9.5
Ang. -162 -169 -164 -163 -166 Mag. 0.64 0.67 0.64 0.67 0.74
9.0
load
Ang. -174 -173 -175 -174 -175
Ccb (pF)
8.5 8.0 7.5 7.0 6.5 6.0 0 2 4 6 8 10
Vcb (V)
Figure 11. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test).
SPICE Model Parameters
Die Model
CPad C CPad B CPad
RB LB2 RB LB3 CM LE2 LE2 Die
Packaged Model
Cbc
Die Area = 1.2 CPad = 0.3 pF Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR NR Value 280 299.9 9.9E-11 2.399 33.16 0.9935 1.6E-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7E-13 1.587 1.511 0.9886
E1 Label TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB IRB RBM RE RC Value 1E-9 1.11 3.598E-15 3 0.8E-12 0.4831 0.2508 0.001 0.999 6.16E-12 1.186 0.5965 0.752 0 0.01 1.27 0.107
E2
LB1 B Cbe R1
RB LB2
RB LB3 CM LE2
Die
LC1 Cce
C
LE2 R1 LE1 E
Label Cbc Cbe Cce CM LB1 LB2 LB3 LE1 LE2 LC1 RB R1
Value 0.80 pF 0.006 pF 3.17 pF 20.8 pF 0.63 nH 0.10 nH 0.87 nH 0.35 nH 0.78 nH 0.74 nH 0.1 0.2
4-75
AT-33225 Typical Scattering Parameters, Common Emitter, ZO = 50
VCE = 3.6 V, IC = 200 mA, TC = 25C Freq. S11 GHz Mag. Ang. dB
0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 0.88 0.89 0.88 0.85 0.77 0.70 0.71 0.93 0.98 0.98 0.98 0.87 0.88 0.88 0.85 0.78 0.72 0.72 0.93 0.98 0.98 0.98 0.87 0.88 0.88 0.85 0.78 0.72 0.73 0.92 0.98 0.98 0.98 -164 -174 178 172 168 171 178 178 169 163 159 -162 -172 179 172 169 172 178 177 169 163 159 -161 -172 179 173 169 172 177 177 169 163 158 27.0 21.2 13.6 9.1 8.2 8.5 8.2 2.3 -5.5 -13.6 -23.2 27.1 21.4 13.8 9.2 8.2 8.4 8.1 2.6 -5.1 -13.0 -22.2 27.3 21.5 13.9 9.3 8.3 8.4 8.1 2.7 -5.0 -12.7 -21.7
S21 Mag.
22.26 11.42 4.80 2.85 2.58 2.67 2.57 1.30 0.53 0.21 0.07 22.76 11.69 4.91 2.89 2.58 2.62 2.53 1.35 0.56 0.22 0.08 23.07 11.86 4.97 2.93 2.59 2.63 2.53 1.37 0.57 0.23 0.08
Ang.
99 91 79 62 38 13 -10 -68 -97 -119 -163 100 91 78 61 37 13 -9 -66 -97 -119 -159 100 91 78 61 37 13 -9 -65 -96 -119 -158
dB
-34.9 -34.0 -30.5 -25.8 -23.2 -23.4 -26.0 -26.6 -20.5 -18.1 -16.4 -34.4 -33.6 -30.2 -26.0 -23.6 -24.0 -26.4 -26.7 -20.5 -18.1 -16.5 -34.4 -33.6 -30.5 -26.2 -23.7 -24.2 -26.6 -26.7 -20.5 -18.1 -16.5
S12 Mag.
0.018 0.020 0.030 0.051 0.069 0.068 0.050 0.047 0.094 0.125 0.151 0.019 0.021 0.031 0.050 0.066 0.063 0.048 0.046 0.094 0.125 0.150 0.019 0.021 0.030 0.049 0.065 0.062 0.047 0.046 0.094 0.125 0.150
S22 Ang.
26 32 47 51 40 25 14 93 86 78 72 25 30 44 49 39 26 17 93 86 78 72 25 30 44 49 39 26 18 94 86 78 72
Mag.
0.58 0.57 0.56 0.49 0.34 0.36 0.59 0.98 0.97 0.93 0.90 0.55 0.53 0.52 0.45 0.33 0.38 0.59 0.98 0.97 0.92 0.90 0.54 0.52 0.51 0.44 0.32 0.38 0.60 0.98 0.97 0.92 0.90
Ang.
-153 -168 -179 175 -177 -142 -133 -162 180 170 164 -149 -166 -178 177 -171 -138 -132 -161 -179 171 165 -149 -166 -178 177 -169 -137 -131 -160 -179 171 165
VCE = 4.8 V, IC = 150 mA, TC = 25C
VCE = 6.0 V, IC = 150 mA, TC = 25C
Typical Performance
40 30 20 GAIN (dB) 10 |S21|2 0 -10 -20 -30 0.05 MSG MAG MSG GAIN (dB) 40 30 20 10 |S21|2 0 -10 -20 -30 0.05 MSG MAG MSG GAIN (dB) 40 30 20 10 |S21|2 0 -10 -20 -30 0.05 MSG MAG MSG
0.25
0.75
1.00
1.50
2.00
0.25
0.75
1.00
1.50
2.00
0.25
0.75
1.00
1.50
2.00
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency, VCE = 3.6 V, IC = 200 mA.
Figure 13. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency, VCE = 4.8 V, IC = 150 mA.
4-76
Figure 14. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency, VCE = 6.0 V, IC = 150 mA.
Test Circuit A: Test Circuit Board Layout @ 900 MHz (ETACS/ISM)
VBB VBB
R2 R1 T1 R3 C2 R4 C3 L1 R5 C6 L2 C5 C8 C9 9/96
VCC VCC
C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 pF 100.0 nF 7.5 pF 100.0 nF 100.0 pF 5.1 pF 1.5 F 10.0 F 100.0 pF 2.2 750.0 2.2 10.0 10.0 MBT 2222A 18.0 H 18.0 H
38.1 (1.5)
C1
C4
C7
C10
INPUT
PA3 DEMO 76.2 (3.0)
B-MFG0141
OUTPUT
CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 900 MHz
Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031)
NOTE: Dimensions are shown in millimeters (inches).
Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz (ETACS/ISM)
VBB
CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 900 MHz
VCC
2.2 B DC C E Transistor
750 2.2 10 100 nF
10 100 pF 80 /4 @ 900 MHz 100 pF 80 /4 @ 900 MHz 50 100 pF RF OUT = 14.35 (.565) 5.1 pF 100 nF 1.5 F 10 F
18 H
18 H
100 pF RF IN 7.5 pF
50 = 7.06 (.278)
4-77
Test Circuit B: Test Circuit Board Layout @ 836.5 MHz (AMPS)
VBB VBB
C2 R2 R1 T1 R3 L1 R4 C4 C5 L2 R5 C6 C8 C9 9/96
VCC VCC
C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 nF 9.5 pF 100.0 pF 100.0 pF 100.0 nF 6.8 pF 1.5 F 10.0 F 100.0 pF 2.2 750.0 2.2 10.0 10.0 MBT 2222A 18.0 H 18.0 H
38.1 (1.5)
C1
C3
C7
C10
INPUT
PA3 DEMO 76.2 (3.0)
B-MFG0141
OUTPUT
CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 836.5 MHz
Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031)
NOTE: Dimensions are shown in millimeters (inches).
Test Circuit B: Test Circuit Schematic Diagram @ 836.5 MHz (AMPS)
VBB
CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 836.5 MHz
VCC
2.2 B DC C E Transistor
750 2.2 10 100 nF
10 100 pF 80 /4 @ 836.5 MHz 100 pF 80 100 nF 1.5 F 10 F
18 H
18 H
/4 @ 836.5 MHz 50 100 pF RF OUT = 12.65 (.498) 6.8 pF
100 pF RF IN 9.5 pF
50 = 7.19 (.283)
4-78
Part Number Ordering Information
Part Number AT-33225-TR1 AT-33225-BLK No. of Devices 1000 25 Container 7" Reel Carrier Tape
Package Dimensions
MSOP-3 Surface Mount Plastic Package
3.12/3.23 (.123/.127) R 0.25 (.010) MAX 0.18/0.25 (.007/.010) SEE DETAIL A
4.62/5.03 (.182/.198)
0.76 REF (.030)
2.64/2.82 (.104/.111)
0.51 (.020) DIA X 0.15 (.006) DEEP REF PIN 1 0.76 REF (.030)
1.91 (.075) BASIC 4.80/5.00 (.189/.197) TOP VIEW
1.09/1.42 (.043/.056) 1.22/1.60 (.048/.063)
SEATING PLANE 0.58/0.69 (.023/.027) SIDE VIEW
LEAD TIP COPLANARITY
0.10 (.004)
0.10/0.25 (.004/.010)
R 0.20 (.008) MIN R 0.20/0.33 (.008/.013) 0.25 (.010) GAUGE PLANE SEATING PLANE 0 MIN/8 MAX
0.41/0.86 (.016/.034) DETAIL A
NOTE: DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
4-79
Tape Dimensions and Product Orientation for Package MSOP-3
REEL
CARRIER TAPE USER FEED DIRECTION COVER TAPE
2.00 0.05 (.079 .002) 1.75 (.069) 1.5 (.059) 4.0 (.157) 0.30 0.05 (.012 .002)
5.50 0.05 (.217 .002)
12.0 0.3 5.2 (.472 .012) (.205)
R 0.3 (.012)
R 0.5 (.020) TYP
8.0 (.315)
1.5 (.059)
5.2 (.205)
1.75 (.069)
NOTES: 1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 2. TOLERANCES: .X 0.1 (.XXX .004)
4-80

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