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 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3483
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3483 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3483 2SK3483-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
FEATURES
* Low on-state resistance RDS(on)1 = 52 m MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 m MAX. (VGS = 4.5 V, ID = 14 A) * Low Ciss: Ciss = 2300 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package (TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0V) Gate to Source Voltage (VDS = 0V) Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
100 20 28 60 40 1.0 150 -55 to +150 25 62.5
V V A A W W C C A mJ (TO-252)
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D15068EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan
The mark
shows major revised points.
2001
2SK3483
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 14 A VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 14 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 50 V, ID = 14 A VGS = 10 V RG = 0
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
1.5 9.0
2.0 18 41 45 2300 230 120 12 9 53 5
2.5
Drain to Source On-state Resistance
52 59
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 80 V VGS = 10 V ID = 28 A IF = 28 A, VGS = 0 V IF = 28 A, VGS = 0 V di/dt = 100 A/s
49 7 13 1.0 73 175
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D15068EJ2V0DS
2SK3483
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
120
dT - Percentage of Rated Power - %
45 40
PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
1000
35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
ID - Drain Current - A
100
10
d ite V) im 10 )L = on S( GS DC RDat V (
ID(DC) = 28 A
ID(pulse) = 60 A
PW 0 s
=
10 1 m s
10
s
P 10 Li owe m mr s ite D d iss ip at io n
1 TC = 25C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 125C/W
Channel to Ambient 10 Rth(ch-C) = 3.13C/W Channel to Case 1
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000
Data Sheet D15068EJ2V0DS
3
2SK3483
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
60
Pulsed
FORWARD TRANSFER CHARACTERISTICS
100
50
VGS = 10 V
10
ID - Drain Current - A
40
4.5 V
ID - Drain Current - A
1
T A = 150C 75C 25C -40C
30 20 10 0 0.0
0.1
0.01
V D S = 10 V P ulsed
0.001
1.0
2.0
3.0
4.0
5.0
0
1
2
3
4
5
VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
4.0
100
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50
VSD = 10 V ID = 1 mA
10
TA = -40C 25C 75C 150C
1
0.1
V D S = 10 V P ulsed
0.01 0.01
0.1
1
10
100
75 100 125 150 175
Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m
100 90 80 70 60 50 40 30 20 10 0 0.1 1 10 100
10 V VGS = 4.5 V Pulsed
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
80
Pulsed
70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20
5.6 A ID = 28 A 14A
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D15068EJ2V0DS
2SK3483
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
120
Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss VGS = 0 V f = 1MHz
80
VGS = 4.5 V
Ciss, Coss, Crss - Capacitance - pF
100
1000
Coss
60
10 V
40 20 0 -50 -25 0 25 50 75 100 125 150 175
100
Crss
10 0.01
0.1
1
10
100
Tch - Channel Temperature - C SWITCHING CHARACTERISTICS
1000
VDD = 50 V VGS = 10 V RG = 0
VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100 90
ID = 28 A
10
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
100
70 60 50 40 30 20 10 0 0 5
td(off)
VGS
6
td(on)
4
10
tr tf
VDS
2
1 0.1 1 10 100
0 10 15 20 25 30 35 40 45 50
ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
P ulsed
QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DRAIN CURRENT
1000
di/dt = 100 A / s VGS = 0 V
ISD - Diode Forward Current - A
100
V G S = 10 V
trr - Reverse Recovery Time - ns
100
10
0V
1
10
0.1
0.01 0.0 0.5 1.0 1.5
1 0.1 1 10 100
VSD - Source to Drain Voltage - V
IF - Drain Current - A
Data Sheet D15068EJ2V0DS
5
VGS - Gate to Drain Voltage - V
80
VDD = 80 V 50 V 20 V
8
2SK3483
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
1000
VDD = 50 V VGS = 20 0 V RG= 25 Starting Tch = 25C
SINGLE AVALANCHE ENERGY DERATING FACTOR
120 100 80 60 40 20 0
VDD = 50 V VGS = 20 0 V RG = 25 IAS 25 A
IAS - Single Avalanche Current - A
100
IAS = 25 A EAS = 62.5 m J
10
1 0.01
Energy Derating Factor - %
0.1
1
10
25
50
75
100
125
150
175
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D15068EJ2V0DS
2SK3483
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
1.5 -0.1
+0.2
5.0 0.2
1.6 0.2
0.5 0.1
0.8 4.3 MAX.
4
5.5 0.2 13.7 MIN.
6.5 0.2 5.0 0.2 4
1.5 -0.1
+0.2
6.5 0.2
2.3 0.2
2.3 0.2 0.5 0.1
1
2
3
7.0 MIN.
1
2
3
1.1 0.2
+0.2
0.5 -0.1
2.3 2.3
0.75
0.5 -0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
+0.2
0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
0.7
1.1 0.2
2.0 MIN.
5.5 0.2 10.0 MAX.
1.0 MIN. 1.8TYP.
Data Sheet D15068EJ2V0DS
7
2SK3483
* The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1


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