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Bulletin I25164 rev. C 02/00 ST180C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK) 350A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM tq TJ typical case style TO-200AB (A-PUK) Units A C A C A A KA2s KA2s V s C ST180C..C 350 55 660 25 5000 5230 125 114 400 to 2000 100 - 40 to 125 www.irf.com 1 ST180C..C Series Bulletin I25164 rev. C 02/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 04 08 ST180C..C 12 16 18 20 V DRM/V RRM, max. repetitive peak and off-state voltage V 400 800 1200 1600 1800 2000 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 1700 1900 2100 I DRM/I RRM max. @ TJ = TJ max mA 30 On-state Conduction Parameter IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one-cycle non-repetitive surge current ST180C..C 350 (140) 55 (85) 660 5000 5230 4200 4400 Units Conditions A C 180 conduction, half sine wave double side (single side) cooled @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. I 2t Maximum I2t for fusing 125 114 88 81 I 2t Maximum I2t for fusing 1250 1.08 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Max. (typical) latching current V 1.14 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 1.14 1.96 600 1000 (300) mA TJ = TJ max, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. I = 750A, TJ = TJ max, t = 10ms sine pulse pk p 1.18 2 www.irf.com ST180C..C Series Bulletin I25164 rev. C 02/00 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td t q ST180C..C 1000 1.0 Units Conditions A/s Gate drive 20V, 20, tr 1s T J = T J max, anode voltage 80% VDRM Typical delay time Typical turn-off time s 100 Gate current 1A, di g /dt = 1A/s Vd = 0.67% VDRM, TJ = 25C ITM = 300A, T J = T J max, di/dt = 20A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s Blocking Parameter dv/dt IDRM IRRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST180C..C 500 30 Units Conditions V/s mA TJ = TJ max linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM IGM +VGM -VGM Maximum peak gate power ST180C..C 10 2.0 3.0 20 Units Conditions W A TJ = TJ max, t 5ms p PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. 180 IGT DC gate current required to trigger 90 40 2.9 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.8 1.2 TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t 5ms p V 5.0 MAX. 150 3.0 10 0.25 mA V V mA T J = TJ max, tp 5ms TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = TJ max www.irf.com 3 ST180C..C Series Bulletin I25164 rev. C 02/00 Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range ST180C..C -40 to 125 -40 to 150 0.17 0.08 0.033 0.017 4900 (500) Units C Conditions RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10% DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled K/W N (Kg) g wt Approximate weight Case style 50 TO - 200AB (A-PUK) See Outline Table RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side 0.015 0.018 0.024 0.035 0.060 0.015 0.019 0.024 0.035 0.060 0.011 0.019 0.026 0.036 0.060 0.011 0.019 0.026 0.037 0.061 Units Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 1 18 2 0 3 C 4 20 5 C 6 1 7 8 1 2 3 4 5 6 7 - Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) C = Puk Case TO-200AB (A-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) 4 www.irf.com ST180C..C Series Bulletin I25164 rev. C 02/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Maximum Allowable Heatsink Temperature (C) 130 120 110 100 90 80 70 60 50 40 0 50 30 Maximum Allowable Heatsink Temperature (C) ST180C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 130 120 110 100 90 80 70 60 50 40 30 20 0 100 30 ST180C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W Conduction Angle Conduction Period 60 90 120 180 60 90 120 180 DC 100 150 200 250 200 300 400 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Average On-state Current (A) Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST180C..C Series Bulletin I25164 rev. C 02/00 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 30 ST180C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W 130 120 110 100 90 80 70 60 50 40 30 20 0 30 ST180C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W Conduction Angle Conduction Period 60 90 120 180 60 90 120 180 DC 50 100 150 200 250 300 350 400 450 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 100 200 300 400 500 600 700 Average On-state Current (A) Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 1000 900 800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 350 400 450 Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Conduction Angle 180 120 90 60 30 RMS Limit ST180C..C Series T J = 125C 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 DC 180 120 90 60 30 RMS Limit Conduction Period ST180C..C Series T J = 125C 100 200 300 400 500 600 700 Average On-state Current (A) Fig. 6- On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 4500 4000 3500 3000 2500 Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 5000 4500 4000 3500 3000 2500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125C No Voltage Reapplied Rated V RRM Reapplied ST180C..C Series ST180C..C Series 2000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 2000 0.01 0.1 Pulse Train Duration (s) 1 Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 www.irf.com ST180C..C Series Bulletin I25164 rev. C 02/00 10000 Instantaneous On-state Current (A) T J= 25C 1000 T J= 125C ST180C..C Series 100 1 2 3 4 5 6 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Transient Thermal Impedance ZthJ-hs (K/W) 1 Steady State Value R thJ-hs = 0.17 K/W (Single Side Cooled) 0.1 R thJ-hs = 0.08 K/W (Double Side Cooled) (DC Operation) 0.01 ST180C..C Series 0.001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) Tj=-40 C Tj=25 C Tj=125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: ST180C..C Series Frequency Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7 |
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