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| MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-24B * * * * * IC Collector current .......................... 75A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107.5 930.25 12 E2 B2 2-6.5 B2 E2 18.5 4 34.5 13 C1 C2E1 E2 C2E1 23.5 23 E2 23 C1 B1 E1 5 4 E1 B1 3-M5 22 8 15 8 22 Tab#110, t=0.5 21 37.2 28.5 -0.5 LABEL 6.5MIN. +1 (23) (8) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 75 75 500 4 750 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=75A, IB=100mA -IC=75A (diode forward voltage) IC=75A, VCE=4V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=75A, IB1=150mA, IB2=-1.5A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 50 4.0 4.0 1.8 -- 2.5 15 3.0 0.25 1.2 0.13 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 Tj=25C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) 160 IB=200mA 120 IB=100mA IB=400mA DC CURRENT GAIN hFE VCE=10V 80 IB=40mA 40 IB=20mA 0 0 1 2 3 4 5 VCE=4V Tj=25C Tj=125C 4 5 7 10 1 2 3 4 5 7 10 2 2 34 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 3 2 VCE=4V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 BASE CURRENT IB (A) SATURATION VOLTAGE 10 0 7 5 4 3 2 10 -1 7 5 4 3 3.0 VBE(sat) 3.4 3.8 4.2 4.6 5.0 VCE(sat) 10 0 7 5 4 3 IB=100mA 2 Tj=25C Tj=125C -1 10 4 5 7 10 1 2 3 4 5 7 10 2 2 34 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 IC=100A SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 ton, ts, tf (s) 4 3 IC=75A SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 ts tf ton 2 IC=50A 1 0 Tj=25C Tj=125C VCC=600V IB1=150mA IB2=-1.5A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 3 5 710 -22 3 5 710 -1 2 3 5 7 10 0 2 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 REVERSE BIAS SAFE OPERATING AREA 160 ts 10 1 7 5 4 3 2 10 0 COLLECTOR CURRENT IC (A) 23 ts, tf (s) 140 120 100 80 60 40 20 Tj=125C -IB2=1A 0 0 200 400 600 800 1000 1200 1400 SWITCHING TIME tf VCC=600V IC=75A 7 IB1=150mA 5 Tj=25C 4 Tj=125C 3 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 1mS DERATING FACTOR OF F. B. S. O. A. 100 90 COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 100S 50S 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 200S DC 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 2 3 5 710 1 2 3 5 7 10 2 2 3 5 7 10 3 2 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2 3 5 7 10 2 0.32 0.28 0.24 Zth (j-c) (C/ W) 0.20 0.16 0.12 0.08 0.04 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0 0.4 0.8 1.2 Tj=25C Tj=125C 2.0 1.6 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 10 2 Irr 10 1 trr (s) Feb.1999 VCC=600V 10 1 IB1=0.15A 7 IB2=-1.5A 5 3 2 Qrr 10 0 10 0 trr 7 5 3 Tj=25C 2 Tj=125C -1 10 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) |
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