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BZX55B43 S30S20PT A67P9318 Z2641 D75116GF PA3124D2 56000 MD203
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 NTE2596 Silicon NPN Transistor High Voltage, High Current Switch
Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Symbol ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) Test Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 4.8A VCE = 5V, IC = 24A IC = 24A, IB = 4.8A IC = 24A, IB = 4.8A Min - - 20 8 - - Typ - - - - - - Max Unit 10 10 50 - 1.0 1.5 V V A A
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Test Conditions Min 800 500 7 500 - - - Typ - - - - - - - Max Unit - - - - 0.5 3.0 0.2 V V V V s s s V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Collector-Emitter Sustaining Voltage VCEX(sus) IC = 15A, IB1 = -IB2 = 2A, L = 100H, Clamped Turn-On Time Storage Time Fall Time ton tstg tf VCC = 200V, 5IB1 = -2.5IB2 = IC = 26A, RL = 7.7
.810 (20.57) Max .236 (6.0)
.204 (5.2)
1.030 (26.16) .137 (3.5) Dia Max
.098 (2.5)
.787 (20.0)
.215 (5.45)
.040 (1.0)
.023 (0.6)
B
C
E Note: Collector connected to heat sink


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