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| BTS 282 Z Speed TEMPFET N-Channel Enhancement mode Logic Level Input Analog driving possible Fast switching up to 1 MHz Potential-free temperature sensor with thyristor characteristics Overtemperature protection Avalanche rated High current pinning 1 7 VPT05754 1 7 VPT05167 1 7 Type BTS 282 Z VDS 49 V RDS(on) 6.5 m Package P-TO220-7-3 P-TO220-7-180 P-TO220-7-230 Ordering Code Q67060-S6004-A2 Q67060-S6005-A2 Q67060-S6007 D Pin 4 and TAB G Pin 2 A Pin 3 Temperature Sensor K Pin 5 S Pin 1 + 6 + 7 Pin 1 2 3 4 5 6 7 Symbol S G A D K S S Function Source Gate Anode Temperature Sensor Drain Cathode Temperature Sensor Source Source 1 2000-09-11 BTS 282 Z Maximum Ratings Parameter Drain source voltage Drain-gate voltage, RGS = 20 k Gate source voltage Nominal load current (ISO 10483) VGS = 10 V, VDS Symbol VDS V Value 49 49 20 A Unit V DGR ID(ISO) Continuous drain current 1) TC = 100 C, VGS = 4.5V Pulsed drain current Avalanche energy, single pulse Power dissipation TC = 25 C Operating temperature 2) Peak temperature ( single event ) Storage temperature DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175C 2 2000-09-11 ID = 36 A, RGS = 25 VGS = 4.5 V, VDS 0.5 V, TC = 85 C ID ID puls EAS Ptot Tj Tjpeak Tstg 0.5 V, TC = 85 C -40 ...+175 200 -55 ... +150 E 40/150/56 VGS 36 52 80 320 2 300 J W C BTS 282 Z Thermal Characteristics Parameter Characteristics junction - case: Thermal resistance @ min. footprint Thermal resistance @ 6 cm2 cooling area 1) RthJC Rth(JA) Rth(JA) 33 0.5 62 40 K/W Symbol min. Values typ. max. Unit Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 240 A Zero gate voltage drain current VDS = 45 V, VGS = 0 V, Tj = -40 C VDS = 45 V, VGS = 0 V, Tj = 25 C VDS = 45 V, VGS = 0 V, Tj = 150 C Gate-source leakage current VGS = 20 V, VDS = 0 V, Tj = 25 C VGS = 20 V, VDS = 0 V, Tj = 150 C Drain-Source on-state resistance VGS = 4.5 V, ID = 36 A VGS = 10 V, ID = 36 A RDS(on) 8.2 5.8 9.5 6.5 IGSS 10 20 100 100 m IDSS 0.1 0.1 1 100 nA A VGS(th) 1.2 1.6 2 V(BR)DSS 49 V Symbol min. Values typ. max. Unit 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB mounted vertical without blown air. 3 2000-09-11 BTS 282 Z Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Dynamic Characteristics Forward transconductance VDS>2*ID *RDS(on)max , ID = 80 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 80 A, Rise time RG = 1.3 td(on) 30 45 ns Crss 570 715 Coss 1090 1357 Ciss 3850 4800 pF gfs 30 70 S Symbol min. Values typ. max. Unit VDD = 30 V, VGS = 4.5 V, ID = 80 A, Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 80 A, Fall time RG = 1.3 VDD = 30 V, VGS = 4.5 V, ID = 80 A, Gate Charge Characteristics Gate charge at threshold VDD = 40 V, ID=0,1 A , V GS = 0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 80 A, V GS = 0 to 5 V Gate charge total VDD = 40 V, ID = 80 A, V GS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 80 A 4 2000-09-11 RG = 1.3 RG = 1.3 tr - 37 56 td(off) - 70 105 tf - 36 55 Qg(th) Qg(5) Qg(total) V(plateau) - 3.8 92 155 3.4 5.7 138 232 - nC V BTS 282 Z Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Reverse Diode Inverse diode continuous forward current TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 95 A Reverse recovery time VR = 30 V, IF =IS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF =IS, diF/dt = 100 A/s Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept - Speed TEMPFET". For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family". All application notes are available at http://www.infineon.com/tempfet/ Symbol min. IS IFM VSD trr Qrr 80 320 - Values typ. 1.25 105 0.31 max. 1.6 157 0.47 Unit A V ns C Forward voltage IAK(on) = 5 mA, Tj = -40...+150 C IAK(on) = 1.5 mA, Tj = 150 C Sensor override tP = 100 s, Tj = -40...+150 C Forward current Tj = -40...+150 C Sensor override tP = 100 s, Tj = -40...+150 C VAK(on) IAK(on) 1.3 1.4 0.9 10 5 600 V mA 5 2000-09-11 BTS 282 Z Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Sensor Characteristics Temperature sensor leakage current Tj = 150 C Min. reset pulse duration 1) Tj = -40...+150 C, IAK(on) = 0.3 mA, VAK(Reset)<0.5V VAK Recovery time1)2) Tj = -40...+150 C, IAK(on) = 0.3 mA Characteristics Holding current, VAK(off) = 5V Tj = 25 C Tj = 150 C Thermal trip temperature VTS = 5V Turn-off time (Pin G+A and K+S connected) VTS = 5V, ITS(on) = 2 mA Reset voltage Tj = -40...+150C Sensor recovery behaviour: S ensor R E S E T Symbol min. IAK(off) treset 100 Values typ. max. 4 - Unit A s trecovery - - 150 IAK(hold) 0.05 0.05 TTS(on) toff VAK(reset) 150 0.5 0.5 160 0.5 0.3 170 2.5 - mA C s V V A K [V ] 5 4 tre s e t 0 S ensor O N R eset t re c o v e ry OFF 1See diagram Sensor recovery behaviour 2Time after reset pulse until V AK reaches 4V again 6 2000-09-11 BTS 282 Z 1 Maximum allowable power dissipation Ptot = f(TC) 325 W 2 Drain current 100 A 275 250 225 80 70 Ptot ID 200 175 150 125 100 75 50 25 0 -40 0 40 80 120 C 60 50 40 30 20 10 180 0 0 20 40 TC 3 Typ. transient thermal impedance ZthJA=f(tp ) @ 6 cm2 cooling area 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 0 K/W Parameter: D=tp /T 10 K/W D=0.5 2 D=0.5 10 1 0.2 0.1 0.05 10 -1 0.2 0.1 0.05 10 0 Z thJC Z thJA 0.02 0.01 10 -2 0.02 0.01 10 -1 Single pulse 10 -3 10 -2 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 3 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 1 10 10 10 10 10 10 10 10 10 10 tp 7 ID = f(TC ); VGS 4.5V 60 80 100 120 140 C 180 TC Single pulse s 10 3 tp 2000-09-11 BTS 282 Z 5 Safe operating area ID=f(VDS ); D=0.01; TC =25C; VGS =4.5V 10 3 6 Typ. output characteristic ID = f(VDS); Tj =25C Parameter: VGS 200 A 7V 10V 6V 5V A Rdson=Vds/Id 30s 100s 160 140 10 2 4.5V ID ID 1ms 120 100 4V 10ms 80 10 1 100ms DC 60 40 20 3.5V 3V 10 0 0 10 10 1 V 10 2 0 0 1 2 V 4 VDS VDS 7 On-state resistance RON = f(Tj ); ID=36A; VGS = 4.5V 20 8 On-state resistance RON = f(Tj ); ID=36A; VGS = 10V 14 max. m 16 m max. RDS(on) RDS(on) 14 12 10 8 6 4 typ. 10 typ. 8 6 4 2 2 0 -50 -25 0 25 50 75 100 125 C 175 0 -50 -25 0 25 50 75 100 125 C 175 Tj 8 Tj 2000-09-11 BTS 282 Z 9 Typ. transfer characteristics ID = f(VGS); VDS = 12V; Tj = 25C 150 A 10 Typ. input threshold voltage VGS(th) = f(Tj); VDS =VGS Parameter: ID 2.4 V 120 2.0 VGS(th) 110 100 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 240A 240mA 24mA 2.4mA ID 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 -50 -25 0 25 50 75 100 125 C 175 VGS Tj 11 Typ. capacitances C = f(VDS); VGS =0 V, f=1 MHz 10 2 12 Typ. reverse diode forward charcteristics IF = f(VSD ) tp = 80s (spread); Parameter: Tj 10 3 A nF 10 2 10 1 150C C Ciss IF 10 1 25C 10 0 Coss Crss 10 0 10 -1 0 5 10 15 20 25 30 V 40 10 -1 0.0 0.2 0.4 0.6 0.8 1.0 V 1.4 VDS 9 VSD 2000-09-11 BTS 282 Z 13 Typ. gate charge VGS = f(QGate) 14 Drain-source break down voltage V(BR)DSS = f(Tj ) 58 V Parameter: ID puls = 80 A BTS 282 Z 16 V 56 12 V(BR)DSS 0,8 VDS max 160 55 54 53 52 51 VGS 10 0,2 VDS max 8 6 50 49 4 48 47 46 2 0 0 40 80 120 nC 240 45 -50 -25 0 25 50 75 100 125 C 175 QGate Tj 10 2000-09-11 BTS 282 Z Package P-TO220-7-3 9.9 9.5 3.7 Ordering Code Q67060-S6004-A2 4.4 1.3 Package P-TO220-7-180 9.9 8 7.5 6.6 A Ordering Code Q67060-S6005-A2 B 1.3 +0.1 -0.02 0.1 2.4 4.4 15.6 2.8 10.5 0.15 6.5 9.2 0.2 5 +3 (1.3) 9.2 1) 3.3 3.6 0 ... 0.15 0.6 +0.1 -0.03 2.4 0.5 3.9 8.4 GPT05167 0.6 1.27 6 x 1.27 = 7.62 1.27 6 x 1.27 = 7.62 0.5 +0.15 0.25 M A B 0.1 B 1) shear and punch direction no burrs this surface 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal surfaces tin plated, except area of cut Package P-TO220-7-230 Ordering Code Q67060-S6007 11 2000-09-11 1.5 0.4 8.6 10.2 (14.1) 0.05 1) 12.8 BTS 282 Z Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 2000-09-11 |
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