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| 2SB1694 Transistors General purpose amplification (-30V, -1A) 2SB1694 !Application Low frequency amplifier Driver !External dimensions (Units : mm) (1) 0.65 0.65 0.7 0.3 (3) !Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -380mV At IC = -500mA / IB = -25mA 1.25 2.1 0.15 0.2 (2) 0.1Min. 0~0.1 Each lead has same dimensions Abbreviated symbol : ES ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 0.9 1.3 2.0 (1) Emitter (2) Base (3) Collector !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg Single pulse, PW=1ms !Packaging specifications Unit V V V A A mW C C Package Code Type 2SB1694 Basic ordering unit (pieces) Taping T106 3000 Limits -30 -30 -6 -1 -2 200 150 -55~+150 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance 1 Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -30 -30 -6 - - - 270 - - Typ. - - - - - -180 - 320 7 Max. - - - -100 -100 -380 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=-10A IC=-1mA IE=-10A VCB=-30V VEB=-30V IC=-500mA, IB=-25mA VCE=-2V, IC=-100mA 1 VCE=-2V, IE=100mA, f=100MHz 1 VCB=-10V, IE=0A, f=1MHz 1/2 2SB1694 Transistors !Electrical characteristic curves Ta=100C VCE=-2V Pulsed BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 10 IC/IB=20/1 Pulsed Ta=-40C Ta=25C Ta=100C 10 Ta=25C Pulsed 1 IC/IB=20/1 DC CURRENT GAIN : hFE Ta=25C Ta=-40C 1 VBE(sat) 100 0.1 IC/IB=50/1 IC/IB=10/1 0.1 Ta=100C Ta=25C Ta=-40C 0.01 10 0.001 0.01 0.1 1 10 VCE(sat) 0.01 0.001 0.01 0.1 1 0.001 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current 1 COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) VCE=-2V Pulsed Ta=100C 1000 Ta=25C VCE=-2V f=100MHz 1000 tstg Ta=25C VCE=-5V IC/IB=20/1 0.1 Ta=25C SWITCHING TIME : (ns) 100 tf tr tdon Ta=-40C 100 0.01 10 0.001 0 0.5 1 1.5 10 0.01 0.1 EMITTER CURRENT : IE (A) 1 1 0.01 0.1 COLLECTOR CURRENT : IC (A) 1 BASE TO EMITTER CURRENT : VBE (V) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 Cib Cob 10 Ta=25C IC=0A f=1MHz COLLECTOR CURRENT : IC (A) 1 PW =1 1m 10 DC 00 s ms 10 ms 0.1 Op era tio n 0.01 1 0.1 1 10 100 Ta=25C Single Pulse 0.001 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.8 Safe Operating Area 2/2 |
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