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LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME 2N2222A HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 5.33 (0.210) 4.32 (0.170) FEATURES * SILICON PLANAR EPITAXIAL NPN TRANSISTOR * HIGH SPEED SATURATED SWITCHING * ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO-18 METAL PACKAGE Underside View PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range 75V 40V 6V 800mA 0.5mW 2.28mW / C 1.2W 6.85mW / C -65 to +200C Prelim. 3/96 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 12.7 (0.500) min. LAB ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current Collector - Base Cut-off Current Emitter Cut-off Current (IC = 0) Base Current ON CHARACTERISTICS VCE(sat)1 VBE(sat)1 Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA IC = 10mA hFE DC Current Gain IC = 150mA IC = 150mA IC = 500mA fT Cob Cib hfe SMALL SIGNAL CHARACTERISTICS Transition Frequency 2 IC = 20mA Output Capacitance Input Capacitance Small Signal Current Gain VCB = 10V VEB = 0.5V IC = 1mA IC = 10mA VCE = 20V IE = 0 IC = 0 VCE = 10V VCE = 10V IB = 15mA IB = 50mA IB = 15mA IC = 50mA VCE = 10V VCE = 10V VCE = 10V TA = -55C VCE = 10V 1 VCE = 1V VCE = 10V 1 1 SEME 2N2222A Test Conditions IC = 10mA IC = 10A IE = 10A VCE = 60V IE = 0 IC = 0 VCE = 60V IB = 0 IE = 0 IC = 0 VEB(off) = 3V VCB = 60V TA = 150C VEB = 3V VEB(off) = 3V Min. 40 75 6 Typ. Max. Unit V V V 10 0.01 10 10 20 0.3 1 nA A nA nA V V 0.6 35 50 75 35 100 50 40 300 1.2 2 -- 300 f = 100MHz f = 100kHz f = 100kHz f = 1kHz f = 1kHz MHz 8 25 pF -- 50 75 300 375 10 25 225 60 td tr ts tf SWITCHING CHARACTERISTICS Delay Time VCC = 30V Rise Time Storage Time Fall Time IC = 150mA VCC = 30V VBE(off) = 0.5V IB1 = 15mA IC = 150mA IB1 = IB2 = 15mA ns ns NOTES: 1) Pulse test: tp 300s , 2% 2) fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/96 |
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