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 Bulletin I2404 rev. A 07/00
16RIA SERIES
MEDIUM POWER THYRISTORS Stud Version
Features
Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1600V V DRM / V RRM
16A
Typical Applications
Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM
2
10 to 120
16 85 35
16RIA 140 to 160
16 85 35 225 235 255 235 1400 to 1600 110
Units
A C A A A A 2s A 2s V s C
@ 50Hz @ 60Hz
340 360 574 524 100 to 1200
It
@ 50Hz @ 60Hz
VDRM/VRRM tq TJ typical
- 65 to 125
Case Style TO-208AA (TO-48)
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16RIA Series
Bulletin I2404 rev. A 07/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
10 20 40 60 16RIA 80 100 120 140 160
V DRM /V RRM , max. repetitive peak and off-state voltage (1) V
100 200 400 600 800 1000 1200 1400 1600
VRSM , maximum nonrepetitive peak voltage (2) V
150 300 500 700 900 1100 1300 1500 1700
I DRM /I RRM max.
@ TJ = TJ max.
mA
20
10
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s (2) For voltage pulses with tp 5ms
On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Max. average on-state current @ Case temperature Max. RMS on-state current Max. peak, one-cycle non-repetitive surge current
16RIA 10 to 120
16 85 35 340 360 285 300
140 to 160
16 85 35 225 235 190 200 255 235 180 165 2550 1.14 1.31 14.83 12.03 --1.80
Units
A C A A
Conditions
180 sinusoidal conduction
t = 10ms t = 8.3ms t = 10ms t = 8.3ms
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I2t
Maximum I2t for fusing
574 524 405 375
A2s
t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I2t
Maximum I2t for fusing voltage
5740 0.97 1.24 17.9 13.6 1.75 ---
A2s V
t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.
VT(TO)1 Low level value of threshold VT(TO)2 High level value of threshold voltage rt1 rt2 VTM Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage
m
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.
V
Ipk= 50 A, TJ = 25C TJ = 25C. Anode supply 6V, resistive load,
IH IL
Maximum holding current Latching current
130 200
mA
2
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16RIA Series
Bulletin I2404 rev. A 07/00
Switching
Parameter
di/dt Max. rate of rise of turned-on current VDRM 600V VDRM 800V VDRM 1000V VDRM 1600V tgt trr tq Typical turn-on time Typical reverse recovery time 200 180 160 150 0.9 4 s TJ = 25C, at = rated VDRM/VRRM, TJ = 125C TJ = TJ max., ITM = IT(AV), tp > 200s, di/dt = -10A/s Typical turn-off time 110 TJ = TJ max., ITM = IT(AV), tp > 200s, VR = 100V, di/dt = -10A/s, dv/dt = 20V/s linear to 67% VDRM, gate bias 0V-100W (*) tq = 10sup to 600V, tq = 30s up to 1600V available on special request. A/s
16RIA
Units
Conditions
TJ = TJ max., VDM = rated VDRM Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max. ITM = (2x rated di/dt) A
Blocking
Parameter
dv/dt Max. critical rate of rise of off-state voltage
16RIA
100 300 (*)
Units
V/s
Conditions
TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM
(**) Available with: dv/dt = 1000V/s, to complete code add S90 i.e. 16RIA160S90.
Triggering
Parameter
PGM IGM -VGM IGT Maximum peak gate power PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak negative gate voltage DC gate current required to trigger 90 60 35 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 3.0 2.0 1.0 2.0 0.2 V V mA V mA TJ = - 65C TJ = 25C TJ = 125C TJ = - 65C TJ = 25C TJ = 125C TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-tocathode applied
16RIA
8.0 2.0 1.5 10
Units Conditions
W A V TJ = TJ max. TJ = TJ max. TJ = TJ max.
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16RIA Series
Bulletin I2404 rev. A 07/00
Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
16RIA
- 65 to 125 - 65 to 125 0.86
Units Conditions
C C K/W DC operation
R thJC Max. thermal resistance, junction to case R thCS Max. thermal resistance, case to heatsink T Mounting torque to nut
0.35
K/W
Mounting surface, smooth, flat and greased
to device 25 0.29 2.8 lbf-in kgf.m Nm g (oz) See Outline Table Lubricated threads (Non-lubricated threads)
20(27.5) 0.23(0.32) 2.3(3.1) wt Approximate weight Case style
14 (0.49)
TO-208AA (TO-48)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.21 0.25 0.31 0.45 0.76 0.15 0.25 0.34 0.47 0.76 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
16
1
RIA 160
2 3
M
4
S90
5
1 2 3 4
-
Current code Essential part number Voltage code: Code x 10 = VRRM (See Voltage Rating Table) None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M = Stud base TO-208AA (TO-48) M6 X 1
5
-
Critical dv/dt: None = 300V/s (Standard value) S90 = 1000V/s (Special selection)
4
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16RIA Series
Bulletin I2404 rev. A 07/00
Outline Table
Case Style TO-208AA (TO-48)
All dimensions in millimeters (inches)
Maximum Allowable Case Temperature (C)
120 110 100 90 80 70 60 50 0 5
16RIA Series (100 to 1200V) RthJC (DC) = 1.15 K/W
Maximum Allowable Case Temperature (C)
130
130 120 110 100
16RIA Series (100 to 1200V) RthJC (DC) = 1.15 K/W
Conduction Angle
Conduction Period
90 80 70 60 50 0
30
30
60
60 90 120 180 DC 10 20 30 40
90
120
180
10
15
20
25
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
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16RIA Series
Bulletin I2404 rev. A 07/00
Maximum Average On-state Power Loss (W) 45 40 35 30 25 20 15 10 5 0 0 5 10
Conduction Angle
180 120 90 60 30 RMS Limit
hS Rt
2
A
K/ W
= 1 0. W K/
3K /W 4K /W 5K /W 7K /W
10 K/W
a elt -D R
16RIA Series (100 to 1200V) TJ = 125C 15 20 25 0
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss (W) 45 40 35 30 25 20 15 10 5 0 0 4 8 12 RMS Limit
Conduction Period
DC 180 120 90 60 30
hS Rt
2
A
K/ W
= 1 0. W K/
3K /W 4K /W 5K /W 7K /W
10 K/W
a elt -D R
16RIA Series (100 to 1200V) TJ = 125C 16 20 24 28 0
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
300 Peak Half Sine W ave On-state Current (A) 280 260 240 220 200 180 160 140 1 16RIA Series (100 to 1200V) 10 100
At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial TJ= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
350 Peak Half Sine Wave On-state Current (A) 325 300 275 250 225 200 175 150
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125C No Voltage Reapplied Rated V RRM Reapplied
16RIA Series (100 to 1200V) 0.1 Pulse Train Duration (s) 1
125 0.01
Num Of Equal Amplitude Half Cycle Current Pulses (N) ber
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
6
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16RIA Series
Bulletin I2404 rev. A 07/00
1000 Instantaneous On-state Current (A) 16RIA Series (100 to 1200V)
100
10
TJ = 25C TJ = 125C
1 0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Maximum Allowable Case Temperature (C) 16RIA Series (1400 to 1600V) R thJC (DC) = 1.15 K/W Maximum Allowable Case Temperature (C) 130 130 120 110 100 90 80 30 70 0 5 90 60 120
Conduction Period
16RIA Series (1400 to 1600V) R thJC (DC) = 1.15 K/W
120
110
Conduction Angle
100
30
60
90
120
90
180
180 DC 20 25 30
80
0
2
4
6
8
10
12 14
16 18
10
15
Average On-state Current (A)
Average On-state Current (A)
Fig. 8 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W) 30 25 20 15 10 5 0 180 120 90 60 30 RMS Limit
Fig. 9 - Current Ratings Characteristics
S R th
/W 1K W K/ 1.5 /W 2K W K/
5 2.
3. 5
A
K/ W
/W .5 K =0
5K /W
R elta -D
7K /W
Conduction Angle
10 K/W
16RIA Series (1400 to 1600V) T = 125C J 0 5 10 15 20 0 25 50 75 100 125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 10 - On-state Power Loss Characteristics
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16RIA Series
Bulletin I2404 rev. A 07/00
Maximum Average On-state Power Loss (W) 40 35 30 25 DC 180 120 90 60 30
SA R th
/W 1K W K/
2 K/ W 2. 5K /W
3.5 K/W
5 1.
K/W .5 =0 aR elt -D
20 RMS Limit 15 10 5 0 0 4 8 12
Conduction Period
5K /W
7K /W
16RIA Series (1400 to 1600V) TJ = 125C 16 20 24
10 K /W
28 0
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 11 - On-state Power Loss Characteristics
200 Peak Half Sine Wave On-state Current (A) 180 160 140 120 100 80 250 Peak Half Sine Wave On-state Current (A) 225 200 175 150 125 100 16RIA Series (1400 to 1600V) 0.1 Pulse Train Duration (s) 1
At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated V Reapplied RRM
16RIA Series (1400 to 1600V) 1 10 100
75 0.01
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 12 - Maximum Non-Repetitive Surge Current
1000 Instantaneous On-state Current (A)
Fig. 13 - Maximum Non-Repetitive Surge Current
100
T = 25C J 10 T = 125C J 16RIA Series (1400 to 1600V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Instantaneous On-state Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
8
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16RIA Series
Bulletin I2404 rev. A 07/00
Transient Thermal Impedance Z thJC (K/W) 10 Steady State Value RthJC = 1.15 K/W (DC Operation) 1
0.1 16RIA Series
0.01 0.001
0.01
0.1 Square Wave Pulse Duration (s)
1
10
Fig. 15 - Thermal Impedance Z thJC Characteristics
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 s, tp >= 6 s b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 s, tp >= 6 s (b)
Tj = -65 C Tj = 25 C
(1) PGM = 16W, (2) PGM = 30W, (3) PGM = 60W, (4) PGM = 60W, (a)
tp = 4ms tp = 2ms tp = 1ms tp = 1ms
Tj = 125 C
1 VGD IGD 0.01
(1)
(2) (3)
(4)
0.1 0.001
16RIA Series Frequency Limited by PG(AV) 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 16 - Gate Characteristics
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