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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features * High Speed Switching * Low Saturation Voltage * High Reliability TO-126 Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C).................................................................................... 3.5 W Total Power Dissipation (Tc=25C) ..................................................................................... 30 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage..................................................................................... 600 V BVCEO Collector to Emitter Voltage.................................................................................. 400 V BVEBO Emitter to Base Voltage............................................................................................ 8 V IC Collector Current (DC) ...................................................................................................... 1 A IC Collector Current (Pulse) .................................................................................................. 2 A Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 Min. 600 400 8 10 10 6 Typ. Max. 10 10 0.8 0.9 1.2 1.8 50 Unit V V V uA uA V V V V Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=600V, IE=0 VBE=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V *Pulse Test: Pulse Width 380us, Duty Cycle2% HMJE13003T HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 2/3 Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=3IB 125 C o 75 C o Saturation Voltage (mV) 75 C o 25 C o hFE 10 100 125 C o hFE @ VCE=2V 25 C o 1 0.1 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=4IB 10000 Saturation Voltage & Collector Current VCE(sat) @ IC=5IB Saturation Voltage (mV) 1000 75 C 125 C 100 o o Saturation Vpltage (mV) 1000 75 C 125 C 100 25 C o o o 25 C o 10 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=4IB Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=5IB Saturation Voltage (mV) Saturation Voltage (mV) 75 C 1000 25 C o o 75 C 1000 25 C o o 125 C o 125 C o 100 1 10 100 1000 10000 100 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) HMJE13003T HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126 Dimension D A B 123 G C I E J K M Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 3/3 Marking: 3 4 HSMC Logo Part Number Date Code Product Series Ink Marking Style: Pin 1.Emitter 2.Collector 3.Base F H L 1 2 3-Lead TO-126 Plastic Package HSMC Package Code: T *: Typical DIM 1 2 3 4 A B C D E Inches Min. Max. *3 *3 *3 *3 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 Millimeters Min. Max. *3 *3 *3 *3 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMJE13003T HSMC Product Specification This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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