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| Bulletin I2405 rev. A 07/00 10RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1200V V DRM / V RRM 10A Typical Applications Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM 2 10RIA 10 85 25 Unit A C A A A A2 s A2 s V s C @ 50Hz @ 60Hz 225 240 255 233 100 to 1200 It @ 50Hz @ 60Hz VDRM/VRRM tq TJ typical 110 - 65 to 125 Case Style TO-208AA (TO-48) www.irf.com 1 10RIA Series Bulletin I2405 rev. A 07/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 10 20 40 60 10RIA 80 100 120 V DRM /V RRM , max. repetitive peak and off-state voltage (1) V 100 200 400 600 800 1000 1200 VRSM , maximum nonrepetitive peak voltage (2) V 150 300 500 700 900 1100 1300 I DRM /I RRM max. @ TJ = TJ max. mA 20 10 (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s (2) For voltage pulses with tp 5ms On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current 10RIA 10 85 25 225 240 190 200 Units A C A Conditions 180 conduction, half sine wave t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms A2 s t = 8.3ms t = 10ms t = 8.3ms A2 s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. I 2t Maximum I2t for fusing 255 233 180 165 I 2t Maximum I2t for fusing 2550 1.10 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current 1.39 V (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. 24.3 m 16.7 1.75 130 200 (I > x IT(AV)), TJ = TJ max. Ipk= 32A, TJ = 25C tp = 10ms sine pulse T J = 25C, anode supply 12V resistive load V mA 2 www.irf.com 10RIA Series Bulletin I2405 rev. A 07/00 Switching Parameter di/dt Max. rate of rise of turned-on current VDRM 600V VDRM 800V VDRM 1000V VDRM 1600V tgt trr tq Typical turn-on time Typical reverse recovery time 200 180 160 150 0.9 4 s TJ = 25C, at = rated VDRM/VRRM, TJ = 125C TJ = TJ max., ITM = IT(AV), tp > 200s, di/dt = -10A/s Typical turn-off time 110 TJ = TJ max., ITM = IT(AV), tp > 200s, VR = 100V, di/dt = -10A/s, dv/dt = 20V/s linear to 67% VDRM, gate bias 0V-100W (*) tq = 10sup to 600V, tq = 30s up to 1600V available on special request. A/s 10RIA Units Conditions TJ = TJ max., VDM = rated VDRM Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max. ITM = (2x rated di/dt) A Blocking Parameter dv/dt Max. critical rate of rise of off-state voltage 10RIA 100 300 (*) Units Conditions V/s TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM (**) Available with: dv/dt = 1000V/s, to complete code add S90 i.e. 10RIA120S90. Triggering Parameter PGM IGM -VGM IGT Maximum peak gate power PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak negative gate voltage DC gate current required to trigger 90 60 35 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 3.0 2.0 1.0 2.0 0.2 V V mA V mA TJ = - 65C TJ = 25C TJ = 125C TJ = - 65C TJ = 25C TJ = 125C TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-tocathode applied 10RIA 8.0 2.0 1.5 10 Units Conditions W A V TJ = TJ max. TJ = TJ max. TJ = TJ max. www.irf.com 3 10RIA Series Bulletin I2405 rev. A 07/00 Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range 10RIA - 65 to 125 - 65 to 125 1.85 Units Conditions C C K/W DC operation RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque to nut 0.35 K/W Mounting surface, smooth, flat and greased to device 25 0.29 2.8 lbf-in kgf.m Nm g (oz) See Outline Table Lubricated threads (Non-lubricated threads) 20(27.5) 0.23(0.32) 2.3(3.1) wt Approximate weight Case style 14 (0.49) TO-208AA (TO-48) RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Units 0.44 0.53 0.68 1.01 1.71 0.32 0.56 0.75 1.05 1.73 K/W Conditions TJ = TJ max. Ordering Information Table Device Code 10 1 RIA 120 2 3 M 4 S90 5 1 2 3 4 - Current code Essential part number Voltage code: Code x 10 = VRRM (See Voltage Rating Table) None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M = Stud base TO-208AA (TO-48) M6 X 1 5 - Critical dv/dt: None = 300V/s (Standard value) S90 = 1000V/s (Special selection) 4 www.irf.com 10RIA Series Bulletin I2405 rev. A 07/00 Outline Table Case Style TO-208AA (TO-48) All dimensions in millimeters (inches) Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 130 120 110 100 90 80 70 60 50 40 0 2 4 10RIA Series RthJC (DC) = 1.85 K/W 130 120 110 100 90 80 70 60 50 40 0 5 30 10RIA Series RthJC (DC) = 1.85 K/W Conduction Angle Conduction Period 30 60 90 120 180 60 90 120 180 DC 10 15 20 25 30 6 8 10 12 14 16 18 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic www.irf.com 5 10RIA Series Bulletin I2405 rev. A 07/00 Maximum Average On-state Power Loss (W) 35 30 25 20 15 10 5 0 Conduction Angle 180 120 90 60 30 RMS Limit SA R th 2 K/ W = 1 W K/ 3K /W 4K /W 5K /W 7K /W 10 K /W ta el -D R 10RIA Series TJ = 125C 0 2 4 6 8 0 10 12 14 16 18 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Loss (W) 45 40 35 30 25 20 15 10 5 0 0 5 10 15 RMS Limit Conduction Period DC 180 120 90 60 30 R SA th = 1 2K /W K/ W 3K /W 4K /W 5K /W 7 K/W -D elt a R 10RIA Series TJ = 125C 10 K/W 20 25 30 0 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - On-state Power Loss Characteristics 200 Peak Half Sine Wave On-state Current (A) 190 180 170 160 150 140 130 120 110 100 90 1 10RIA Series 10 100 240 Peak Half Sine Wave On-state Current (A) 220 200 180 160 140 120 100 10RIA Series At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated V RRM Reapplied 80 0.01 0.1 Pulse Train Duration (s) 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 6 www.irf.com 10RIA Series Bulletin I2405 rev. A 07/00 Insta ntaneo us O n-state C urrent (A ) 1 0 00 10 0 T J = 25 C T J = 12 5 C 10 10RIA Series 1 0.5 1 1.5 2 2.5 3 3 .5 4 Instanta n eous O n-sta te Vo lta ge (V) Fig. 7 - Forward Voltage Drop Characteristics Transient Thermal Impedance ZthJC (K/W) 10 Steady State Value R thJC = 1.85 K/W (DC Operation) 1 10RIA Series 0.1 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance Z thJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 s, tp >= 6 s b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 s, tp >= 6 s (b) Tj = -65 C Tj = 25 C (1) PGM = 16W, (2) PGM = 30W, (3) PGM = 60W, (4) PGM = 60W, (a) tp = 4ms tp = 2ms tp = 1ms tp = 1ms Tj = 125 C 1 VGD IGD 0.01 (1) (2) (3) (4) 0.1 0.001 10RIA Series Frequency Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.irf.com 7 10RIA Series Bulletin I2405 rev. A 07/00 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. 8 www.irf.com |
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