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| FDP6021P/FDB6021P April 2001 PRELIMINARY FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel power MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for power management applications. Features * -28 A, -20 V. RDS(ON) = 30 m @ VGS = 4.5 V RDS(ON) = 40 m @ VGS = 2.5 V RDS(ON) = 65 m @ VGS = 1.8 V * Critical DC electrical parameters specified at elevated temperature * High performance trench technology for extremely low RDS(ON) * 175C maximum junction temperature rating Applications * Battery management * Load switch * Voltage regulator . D G S G G D S TO-220 FDP Series S TO-263AB FDB Series D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -20 8 (Note 1) (Note 1) Units V V A W WC C -28 -80 37 0.25 -65 to +175 Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 4 62.5 C/W C/W Package Marking and Ordering Information Device Marking FDP6021P FDB6021P Device FDP6021P FDB6021P Reel Size Tube 13" Tape width n/a 24mm Quantity 45 800 units 2001 Fairchild Semiconductor Corporation FDP6021P/FDB6021P Rev B(W) FDP6021P/FDB6021P Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A,Referenced to 25C VDS = -16 V, VGS = 8 V, VGS = -8 V VGS = 0 V VDS = 0 V VDS = 0 V Min -20 Typ Max Units V Off Characteristics -16 -1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = -250 A ID = -250 A,Referenced to 25C VGS = -4.5 V, ID = -14 A VGS = -2.5 V, ID = -12 A VGS = -1.8 V, ID = -10 A VGS= -4.5V, ID = -14 A, TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -14 A -0.4 -0.7 3 24 31 50 30 -1.5 V mV/C 30 40 65 42 m ID(on) gFS On-State Drain Current Forward Transconductance -40 33 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, f = 1.0 MHz V GS = 0 V, 1890 302 124 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD Notes: Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 13 10 80 50 23 20 128 80 28 ns ns ns ns nC nC nC VDS = -10 V, VGS = -4.5 V ID = -14 A, 20 4 7 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -14 A Voltage -0.9 -28 -1.3 A V 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 2. TO-220 package is supplied in tube / rail @ 45 pieces per rail. 3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A FDP6021P/FDB6021P Rev. B(W) FDP6021P/FDB6021P Typical Characteristics 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 VGS = -4.5V -3.5V -ID, DRAIN CURRENT (A) 30 2.2 -3.0V -2.5V -2.0V VGS = -1.8V 2 1.8 1.6 1.4 1.2 1 0.8 20 -2.0V -1.8V 10 -2.5V -3.0V -3.5V -4.5V -1.5V 0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 10 20 -ID, DRAIN CURRENT (A) 30 40 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.09 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 175 ID = -14A VGS = -4.5V ID = -7A 0.07 0.05 TA = 125oC 0.03 TA = 25oC 0.01 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation withTemperature. 30 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55oC 25oC 125oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 25 -ID, DRAIN CURRENT (A) 20 15 10 5 0 0.5 1 1.5 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6021P/FDB6021P Rev. B(W) FDP6021P/FDB6021P Typical Characteristics 5 -VGS , GATE-SOURCE VOLTAGE (V) 3000 ID =-14A VDS = -5V -10V 2500 CAPACITANCE (pF) CISS 2000 1500 1000 500 CRSS 0 0 5 10 15 20 25 4 f = 1MHz VGS = 0 V -15V 3 2 COSS 1 0 Qg, GATE CHARGE (nC) 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 1000 100s 1ms 10ms 100ms 1s DC P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 800 SINGLE PULSE RJC = 4C/W TA = 25C 600 10 400 VGS = -4.5V SINGLE PULSE RJC = 4oC/W TA = 25oC 1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 200 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) + RJA RJC = 4 C/W 0.2 0.1 0.1 0.05 0.02 0.01 P(pk) t1 t2 SINGLE PULSE TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. FDP6021P/FDB6021P Rev. B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2 |
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