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| BFR 194 PNP Silicon RF Transistor * For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA * Complementary type: BFR 106 (NPN) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 194 RKs Q62702-F1346 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 3 100 10 mW 700 150 - 65 ... + 150 - 65 ... + 150 110 C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 73 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFR 194 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 50 - V nA 100 A 1 15 - IC = 1 mA, IB = 0 Collector-base cutoff current ICBO IEBO hFE VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V Semiconductor Group 2 Dec-13-1996 BFR 194 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 3.5 5 1.47 0.28 4.4 - GHz pF 2 dB 2.8 4.7 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 8 3 10 5.5 - IC = 70 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 MHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-13-1996 BFR 194 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.574 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 9.1007 0.841 1.7871 1.6 4.1356 17.699 53.11 0.71631 0.97481 0 3 V V fF ps V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 111.78 0.84785 92.296 0.75304 0.15908 0.84843 0.65766 0 0.40003 0 0 0.90755 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.66503 21.629 0.43618 fA - 0.012843 A 0.0078447 fA 0.061674 mA 0.10833 0.48212 0.10323 3585.6 0.75 1.11 300 V fF V eV K 0.010453 mA 0.063742 - All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-13-1996 BFR 194 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 800 mW Ptot 600 500 400 TS 300 TA 200 100 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/P totDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.002 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-13-1996 BFR 194 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 4.5 pF 5.5 GHz 10V 8V Ccb 3.5 3.0 fT 4.5 5V 4.0 3V 3.5 2V 2.5 2.0 1.5 1.0 3.0 2.5 2.0 1.5 1.0 1V 0.7V 0.5 0.0 0 4 8 12 16 V VR 22 0.5 0.0 0 20 40 60 80 mA IC 120 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 12 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 7.0 dB dB 6.0 10V 10V 5V 3V 2V G 10 G 5V 5.5 5.0 4.5 4.0 9 3V 2V 8 3.5 3.0 7 1V 2.5 1V 2.0 1.5 6 5 4 0 20 40 60 80 0.7V mA 120 IC 1.0 0.5 0.0 0 20 40 60 80 0.7V mA IC 120 Semiconductor Group 6 Dec-13-1996 BFR 194 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 12 VCE = Parameter, f = 900MHz 40 0.9GHz 8V dBm IC=70mA dB G 0.9GHz 8 IP3 30 2V 3V 6 1.8GHz 25 1V 4 20 2 15 0 0 2 4 6 8 V 12 10 0 10 20 30 40 50 60 70 V CE 80 mA 100 IC Power Gain Gma, Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) VCE = Parameter 28 IC=70mA dB dB IC=70mA G S21 20 22 18 14 15 10 6 2 10 5 10V 2V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 -2 -6 0.0 10V 2V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 0 0.0 Semiconductor Group 7 Dec-13-1996 |
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