 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NPN Silicon High-Voltage Transistor q q q q q BFN 20 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: BFN 21 (PNP) Type BFN 20 Marking DC Ordering Code (tape and reel) Q62702-F1058 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage, RBE = 2.7 k Emitter-base voltage Collector current Peak collector current Total power dissipation, TS = 120 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VCER VEB0 IC ICM Ptot Tj Tstg Values 300 300 300 5 50 100 1 150 - 65 ... + 150 Unit V mA W C 90 30 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BFN 20 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 A Collector-emitter breakdown voltage IC = 10 A, RBE = 2.7 k Emitter-base breakdown voltage IE = 10 A Collector-base cutoff current VCB = 250 V VCB = 250 V, TA = 150 C Collector cutoff current VCE = 300 V, RBE = 2.7 k VCE = 300 V, TA = 150 C, RBE = 2.7 k Emitter-base cutoff current VEB = 5 V DC current gain1) IC = 25 mA, VCE = 20 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA AC characteristics Transition frequency IC = 10 mA, VCE = 10 V, f = 20 MHz Output capacitance VCB = 30 V, f = 1 MHz fT Cobo - - 100 0.8 - - MHz pF V(BR)CE0 V(BR)CB0 V(BR)CER V(BR)EB0 ICB0 - - ICER - - IEB0 hFE VCEsat VBEsat - 40 - - - - - - - - 1 50 10 - 0.5 1 - V - - 100 20 nA A A Values typ. max. Unit 300 300 300 5 - - - - - - - - V 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 BFN 20 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Output capacitance Cobo = f (VCE) f = 1 MHz Permissible pulse load Ptot max / Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 10 V Semiconductor Group 3 BFN 20 Collector current IC = f (VBE) VCE = 20 V Collector cutoff current ICB0 = f (TA) VCB = 250 V DC current gain hFE = f (IC) VCE = 20 V Semiconductor Group 4 |
Price & Availability of BFN20
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |