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BCR39PN
NPN/PNP Silicon Digital Transistor Array
4
Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor (R1 = 22k)
5 6

2 1
3
VPS05604
Tape loading orientation
C1 B2 5 E2 4
Top View 654 W1s 123 Direction of Unreeling
Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device
6
R1 TR1
R1 TR2
Position in tape: pin 1 opposite of feed hole side
EHA07193
1 E1
2 B1
3 C2
EHA07290
Type BCR39PN
Maximum Ratings Parameter
Marking W3s
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 30 100 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 C Junction temperature Storage temperature
mA mW C
Thermal Resistance Junction - soldering point 1) RthJS
140
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BCR39PN
Electrical Characteristics at TA=25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor R1 Vi(on) Vi(off) VCEsat hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit
50 50 5 120 0.4 0.5 15
22
100 630 0.3 0.8 1.1 29
V
nA V
k
AC Characteristics Transition frequency I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 150 MHz
1) Pulse test: t < 300s; D < 2%
2
Nov-29-2001
BCR39PN NPN Type
DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration)
10 3
VCEsat = f (IC), hFE = 20
10 -1
A
hFE
10 -2
10 2
IC
10 -3 10 1 -4 10
-3 -2
10
10
A
10
-1
10 -4 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V
1
IC
VCEsat
Input on Voltage Vi(on) = f (IC )
Input off voltage Vi(off) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -1
VCE = 5V (common emitter configuration)
10 -2
A
A
10 -3 10 -2
IC
IC
10 -4 10 -3 10 -5 10 -4 -1 10
0 1
10
10
V
10
2
10 -6 0
0.5
1
1.5
2
V
3
Vi(on)
Vi(off)
3
Nov-29-2001
BCR39PN PNP Type
DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration)
10 3
VCEsat = f (IC), hFE = 20
10 -1
A
hFE
10 -2
10 2
IC
10 -3 10 1 -4 10
-3 -2
10
10
A
10
-1
10 -4 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V
1
IC
VCEsat
Input on Voltage Vi(on) = f (IC )
Input off voltage V i(off) = f (IC)
VCE = 5V (common emitter configuration)
10 -2
A
VCE = 0.3V (common emitter configuration)
10 -1
A
10 -3 10 -2
IC
IC
10 -4 10 -3 10 -5 10 -4 -1 10
0 1
10
10
V
10
2
10 -6 0
0.5
1
1.5
2
V
3
Vi(on)
Vi(off)
4
Nov-29-2001
BCR39PN
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
150
100
50
0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
Ptotmax / PtotDC
-
10 2
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Nov-29-2001

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