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| 6MBI75S-120 IGBT MODULE ( S series) 1200V / 75A 6 in one-package Features * Compact package * P.C.board mount * Low VCE(sat) IGBT Modules Applications * Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply * Industrial machines, such as welding machines Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tc=25C current Tc=80C 1ms Tc=25C Tc=80C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Rating 1200 20 100 75 200 150 75 150 520 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W C C V N*m Equivalent Circuit Schematic 21(P) 13(P) 1(Gu) 5(Gv) 9(Gw) 2(Eu) 19(U) 6(Ev) 17(V) 10(Ew) 15(W) 3(Gx) 7(Gy) 11(Gz) 4(Ex) 20(N) 8(Ey) 12(Ez) 14(N) *1 : Recommendable value : 2.5 to 3.5 N*m (M5) Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. - - - - 5.5 7.2 - 2.3 - 2.8 - 9000 - 1875 - 1650 - 0.35 - 0.25 - 0.1 - 0.45 - 0.08 - 2.5 - 2.0 - - Conditions Max. 1.0 0.2 8.5 2.6 - - - - 1.2 0.6 - 1.0 0.3 3.3 - 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=75mA Tj=25C VGE=15V, IC=75A Tj=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=75A VGE=15V RG=16 Tj=25C Tj=125C IF=75A IF=75A, VGE=0V Unit mA A V V pF s Turn-off time Diode forward on voltage Reverse recovery time V s Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. - - - - - 0.05 Conditions Max. 0.24 0.50 - IGBT FWD the base to cooling fin C/W C/W C/W Unit Thermal resistance *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6MBI75S-120 Characteristics Collector current vs. Collector-Emitter voltage 200 IGBT Modules Collector current vs. Collector-Emitter voltage 200 Tj= 25 C (typ.) o Tj= 125 C (typ.) o VGE= 20V 150 Collector current : Ic [ A ] 15V 12V 150 Collector current : Ic [ A ] VGE= 20V 15V 12V 100 10V 100 10V 50 50 8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 200 Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage 10 Tj= 25 C (typ.) o Tj= 25 C 150 Collector current : Ic [ A ] o Tj= 125 C Collector - Emitter voltage : VCE [ V ] o 8 6 100 4 Ic= 150A 2 Ic= 75A Ic= 37.5A 50 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 C 20000 1000 o Dynamic Gate charge (typ.) Vcc=600V, Ic=75A, Tj= 25 C 25 o 10000 Cies Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Gate - Emitter voltage : VGE [ V ] 600 15 1000 Coes Cres 400 10 200 5 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 200 400 Gate charge : Qg [ nC ] 600 0 800 6MBI75S-120 IGBT Modules Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V,VGE=15V, Rg=16,Tj=25oC 1000 1000 Vcc=600V,VGE=15V, Rg=16,Tj=125oC toff 500 Switching time : ton, tr, toff, tf [ nsec ] toff ton tr Switching time : ton, tr, toff, tf [ nsec ] 500 ton tr tf 100 100 tf 50 0 50 100 150 Collector current : Ic [ A ] 50 0 50 100 150 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V,Ic=75A,VGE=15V,Tj=25oC 5000 20 Vcc=600V,VGE=15V, Rg=16,Tj=125oC ton toff Switching time : ton, tr, toff, tf [ nsec ] tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] 15 Eon(125 C) o 1000 Eon(25 C) 10 Eoff(125 C) o o 500 Eoff(25 C) 5 Err(125 C) o o 100 tf Err(25 C) o 50 5 10 50 100 500 Gate resistance : Rg [ ] 0 0 50 100 150 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area Vcc=600V,Ic=75A,VGE=15V ,Tj=125oC 50 Eon 200 +VGE=15V,-VGE<15V, Rg>16,Tj<125oC = = = Switching loss : Eon, Eoff, Err [ mJ/pulse ] 40 150 Collector current : Ic [ A ] Eoff 10 Err 0 5 10 50 100 500 Gate resistance : Rg [ ] 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] 30 100 20 50 6MBI75S-120 IGBT Modules Forward current vs. Forward on voltage (typ.) 200 300 Reverse recovery characteristics (typ.) Vcc=600V,VGE=15V, Rg=16 ,Tj=125oC trr(125 C) Tj=125 C 150 Reverse recovery time : trr [ nsec ] Reverse recovery current : Irr [ A ] Forward current : IF [ A ] 100 trr(25 C) Irr(125 C) Irr(25 C) o o o o o Tj=25 C o 100 50 0 0 1 2 Forward on voltage : VF [ V ] 3 4 10 0 50 100 150 Forward current : IF [ A ] Transient thermal resistance 1 FWD Thermal resistanse : Rth(j-c) [ C/W ] IGBT o 0.1 M626 0.01 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] Outline Drawings, mm 1221 8-R2.250.3 4-o5.50.3 13.09 19.05 19 1100.3 94.50.3 19.05 18 19.05 17 19.05 16 15 11.5 +0.5 0 19.05 11.67 39.90.3 3.81 3.81 11.5 +0.5 0 20 14 57.50.3 500.3 58.42 o2.50.1 1.5 o2.10.1 Section A-A o0.4 Shows theory dimensions 0.80.2 6 621 99.60.3 3.81 21 1 2 3 4 5 6 7 8 9 11 12 4.06 3.50.5 1.50.3 15 15.24 15.24 15.24 15.24 15.24 118.11 13 A A 1.150.2 20.51 2.50.3 171 6.50.5 10.2 |
Price & Availability of 6MBI75S-120
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