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Bulletin I25170 rev. B 04/00
ST333C..C SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AB (E-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
720A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AB (E-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ T hs IT(RMS) @ T hs ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM tq range TJ
ST333C..C
720 55 1435 25 11000 11500 605 553 400 to 800 10 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
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ST333C..C Series
Bulletin I25170 rev. B 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage V
ST333C..C 04 08 400 800
VRSM , maximum non-repetitive peak voltage V
500 900
I DRM/I RRM max.
@ TJ = TJ max.
mA
50
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 1630 1630 1350 720 50 VDRM 50 40
ITM 180 el 1420 1390 1090 550 50 50 55 2520 2670 2440 1450 50 VDRM 40
o
ITM 100s 2260 2330 2120 1220 50 55 7610 4080 2420 1230 50 V DRM 40
ITM
Units
6820 3600 2100 1027 50 55 V A/s C A
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST333C..C
720 (350) 55 (75) 1435 11000 11500 9250 9700
Units
A C
Conditions
180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
It
2
Maximum I t for fusing
2
605 553 428 391 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
6050
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST333C..C Series
Bulletin I25170 rev. B 04/00
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r t1 r Low level value of forward slope resistance
t2
ST333C..C Units
1.96 0.91 0.93 0.58 m 0.58 600 1000 mA V
Conditions
ITM= 1810A, T J = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
V T(TO)1 Low level value of threshold
High level value of forward slope resistance Maximum holding current Typical latching current
IH IL
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST333C..C
1000 1.1 Min 10 Max 30
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
s
tq
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST333C..C
500 50
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request T J = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST333C..C
60 10 10 20
Units
W A
Conditions
T J = TJ max., f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST333C..C Series
Bulletin I25170 rev. B 04/00
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST333C..C
-40 to 125 -40 to 150 0.09 0.04 0.020 0.010 9800 (1000)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
83 TO - 200AB (E-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side 0.010 0.012 0.015 0.022 0.036 0.011 0.012 0.015 0.022 0.036 0.007 0.012 0.016 0.023 0.036 0.007 0.013 0.017 0.023 0.036
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
33
2
3
3
C
4
08
5
C
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) dv/dt - tq combinations available
dv/dt (V/s) 10 12 15 tq (s) 18 20 25 30 20 CN CM CL CP CK --50 DN DM DL DP DK --100 EN EM EL EP EK --200 -FM * FL * FP FK FJ -400 --HL HP HK HJ HH
*Standard part number.
All other types available only on request.
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ST333C..C Series
Bulletin I25170 rev. B 04/00
Outline Table
ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN.
14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. 40.5 (1.59) DIA. MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
25 5
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
42 (1.65) MAX. 28 (1.10)
Maximum Allowable Heatsink Temperature (C)
130 120 110 100 90 80 70 60 50 40 30 20 0 100
M a xim u m A llo w ab le H e a t sin k T e m p e ra t u re (C )
ST333C..C Series (Single Side Cooled) R th J- hs (DC) = 0.09 K/W
1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 30 6 0 90 12 0 1 80 DC
Co nd uc tio n P e rio d
ST 3 3 3 C ..C S e rie s (Sin g le S id e C o o le d ) R th J-hs ( D C ) = 0 .0 9 K / W
C o nd uc tio n A ng le
30 60 90 120 180 500 600
200
300
400
10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00 A v e ra g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
Average On -state Current (A)
Fig. 1 - Current Ratings Characteristics
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ST333C..C Series
Bulletin I25170 rev. B 04/00
Maxim um Allowable Heatsin k Tem perature (C) M a xim u m A llo w a b le H e at sin k T e m p e ra t u re (C ) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 2 00 4 00 60 0 800 A v e ra g e O n - st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
C o nd uctio n A ng le
130 120 110 100 90 80 70 60 50 40 30 20 0 30 60
ST 3 3 3 C ..C S e r ie s (D o ub le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 4 K /W
ST333C..C Series ( Double Side Cooled ) R th J-hs (DC) = 0.04 K/W
C o ndu ctio n Pe riod
30 60 90 120 180 1 00 0
90 120 180 DC 200 400 600 800 1000 1200 1400 1600 Average O n-state Current (A)
Fig. 4 - Current Ratings Characteristics
M a x im u m A v e ra g e O n - st a t e P o w e r Lo ss (W )
M a x im um A v e r a g e O n - st a t e Po w e r L o ss (W )
2 2 00 2 0 00 1 8 00 1 6 00 1 4 00 1 2 00 1 0 00 8 00 6 00 4 00 2 00 0 0 20 0 400 60 0 80 0 1 00 0 A v e ra g e O n -st a t e C u rre n t (A )
Fig. 5 - On-state Power Loss Characteristics
C o ndu ctio n A ng le
1 80 1 20 90 60 30
R M S Lim it
ST 3 3 3 C ..C S e r ie s TJ = 1 2 5 C
26 0 0 24 0 0 22 0 0 20 0 0 18 0 0 16 0 0 14 0 0 12 0 0 10 0 0 800 600 400 200 0 0
DC 180 120 90 60 30
R M S L im it
C o ndu ctio n Pe rio d
S T3 3 3 C ..C Se rie s T J = 1 2 5 C 20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 14 0 0 1 60 0 A v e ra g e O n -st a t e C u rre n t (A )
Fig. 6 - On-state Power Loss Characteristics
Peak Half Sine W ave O n-state Current (A)
9500 9000 8500 8000 7500 7000 6500 6000 5500 5000 4500 1
At An y Rated L oad Con dition And W ith Rated VRR M Applied Following Surge. In itial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Peak Half Sine Wave O n-state Curren t (A)
10000
12000 11000
Maxim um Non Repetitive Surge Current V ersus Pulse Train Duration. C ontrol O f Con duction May Not Be M ain tained. Initial TJ = 125C 10000 No Voltage Reapplied Rated VRR M Reapplied 9000 8000 7000 6000 5000 ST333C..C Series 0.1 Pulse T rain Duration (s)
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
ST333C..C Series
10
100
4000 0.01
1
N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N )
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
6
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ST333C..C Series
Bulletin I25170 rev. B 04/00
T ran sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W ) 10000 Instantaneous On-state Current (A) 0 .1 S T3 3 3 C ..C Se r ie s
T = 25C 1000
J
0 .0 1
T = 125C
J
S te a d y St a t e V a lu e R th J-hs = 0 .0 9 K /W (S in gle Sid e C o o le d ) R thJ-h s = 0 .0 4 K /W (D o u b le S id e C o o le d ) (D C O p e ra t io n )
ST333C..C Series 100 0.5 1 1.5 2 2. 5 3 3. 5 4 4.5 5 5.5 6 6.5 Instan tan eous O n-state V oltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0 .0 0 1 0 .0 0 1
0 .0 1
0. 1
1
10
Sq u a re W a v e P u ls e D ur at io n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Maximum Reverse Recovery Charge - Q rr (C)
M ax im u m R e v e rse R e c o v e ry C u rre n t - Irr (A )
320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 70 80 90 100 Rate O f Fall O f O n-state Current - di/dt (A/s)
Fig. 11 - Reverse Recovered Charge Characteristics
I TM = 50 0 A 3 00 A 2 00 A 10 0 A 50 A
180 160 140 120 100 80 60 40 20 10 20 30 40 50 60 70 80 9 0 1 00 R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A / s)
Fig. 12 - Reverse Recovery Current Characteristics
I T M = 5 00 A 3 00 A 20 0 A 1 00 A 50 A
ST333C..C Series TJ = 125 C
ST 3 3 3 C ..C S e rie s TJ = 1 2 5 C
1 E4
P e a k O n -st a te C u rre n t (A )
1 000 1 50 0
50 0
4 00 20 0
1 00
50 Hz 1 000
50 0 15 0 0 2 50 0 3 00 0 5 00 0
4 00
20 0
1 00
50 H z
1 E3
25 00 3 00 0 50 00
Snubb er c ircu it R s = 1 0 o hm s C s = 0 .47 F V D = 80 % V D RM
Snubb er circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V D RM ST33 3C ..C Serie s Sinuso idal pulse T C = 55C
tp
ST33 3 C..C Serie s Sin uso idal pulse T C = 40C
tp
1 E2 1 E1
1E2
1E3
1E 1 E14E 41 E 1 1
1E2
1E3
1E4
P ulse B a se w id th ( s)
Fig. 13 - Frequency Characteristics
Pu lse B a se w id th ( s)
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ST333C..C Series
Bulletin I25170 rev. B 04/00
1E4
Snubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V D RM 10 00 50 0 1 5 00 20 00 2 50 0 3 00 0 5 00 0 tp ST3 33 C.. C Se ries Trap ezo id al p ulse TC = 4 0C di/d t = 50 A/s tp ST33 3C. .C Se ries Trapezo idal p ulse T C = 55 C di/dt = 1 00A /s 10 0 40 0 2 00 50 Hz
P e a k O n - st a t e C ur re n t (A )
1E3
100 0 50 0 15 00 20 0 0 2 5 00 3 0 00
40 0 2 00 10 0
50 Hz
Snubbe r circuit R s = 1 0 o hm s C s = 0.47 F V D = 80 % V D RM
50 00
1E2 1 E1
1E2
1E3
1 1 E 4E 41 E 1 1 1E
1 E2
1 E3
1 E4
P u lse Ba se w id t h ( s)
Fig. 14 - Frequency Characteristics
P u lse Ba se w id th (s)
1 E4
Snubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V DR M 5 00 100 0 4 00 200 10 0 5 0 Hz 50 0 Snubb er c ircuit R s = 10 o hm s C s = 0 .47 F V D = 80 % V D RM ST33 3 C..C Serie s Trape zoidal pulse T C = 40C d i/dt = 100 A/s 10 0 0 1 50 0 20 00 2 50 0 3 00 0 5 00 0 tp ST333 C.. C Se ries Trapezo id al p ulse TC = 55 C di/dt = 10 0A /s 4 00 2 00 10 0 5 0 Hz
P e a k O n - st a te C u rre n t (A )
1 E3
15 00 20 00 2 50 0 3 00 0
50 00 tp
1 E2 1 E1
1 E2
1E3
1 E14E 4 1 E 1 1 1E
1E 2
1 E3
1 E4
P u lse B ase w id t h ( s)
Fig. 15 - Frequency Characteristics
P u lse Ba se w id th ( s)
1E4
3 2 1 5 10
20 jo ule s pe r p ulse tp
P e a k O n - sta t e C u rre n t (A )
ST3 33 C Se ries Rec tang ula r pulse di/dt = 50A /s 3 2 1 0 .5 0.4 0.3
2 0 jou les p er pulse 10 5
1E3
0.5 0 .3 0.2
1E2
0.2 ST33 3C ..C Se ries Sinuso idal pulse
tp
1E1 1E1
1E2
1E3
1 E14E 4 1 E 1 1 1E
1E2
1 E3
1E4
P u lse B ase w id t h ( s)
P u lse Ba se w id t h ( s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
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ST333C..C Series
Bulletin I25170 rev. B 04/00
1 00 In st a n ta n e o u s G at e V o lt a ge ( V ) Re c t a n g ula r g a t e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< =1 s (b )
Tj=- 40 C Tj=25 C Tj=12 5 C
(1) (2) (3) (4) (a )
PGM PGM PGM PGM
= = = =
1 0W , 2 0W , 4 0W , 6 0W ,
tp tp tp tp
= = = =
20 m s 10 m s 5m s 3 .3 m s
1 VGD IG D 0 .1 0 .0 0 1 0 .0 1
(1)
(2)
(3 ) ( 4 )
D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V ) 0 .1 1 10 1 00
In sta n t a n e o u s G at e C u rr e n t ( A )
Fig. 17 - Gate Characteristics
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